A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

An X-ray optical system incorporates a refractometer, interferometer, spectrometer, diffractometer or imaging device for analyzing a sample. The X-ray optical system is configured with a monochromator which is fabricated from low atomic mass metal borates MxByOz crystals, wherein M is low atomic mass metal, and x, y, z are respective atom numbers of metal, borate and oxygen in chemical formula. The metal borates include borates of lithium (Li), sodium (Na) or stronium (Sr).

An X-ray optical system incorporates a refractometer, interferometer, spectrometer, diffractometer or imaging device for analyzing a sample. The X-ray optical system is configured with a monochromator which is fabricated from low atomic mass metal borates MxByOz crystals, wherein M is low atomic mass metal, and x, y, z are respective atom numbers of metal, borate and oxygen in chemical formula. The metal borates include borates of lithium (Li), sodium (Na) or stronium (Sr).

An X-ray beam generating system including an X-ray source for generating an original primary X-ray beam, an optics system including a first optics component and at least one second optics component which are movable relative to the X-ray source in order either to bring the first optics component into interaction with the original primary X-ray beam, whereupon a first primary X-ray beam is generated which is deflected at a first deflection angle, or to bring the second optics component into interaction with the original primary X-ray beam, whereupon a second primary X-ray beam is generated which is deflected at a second deflection angle, and a rotating device to rotate the X-ray beam generating system through either a first rotation angle or a second rotation angle to allow either the first primary X-ray beam or the second primary X-ray beam to impinge on a sample region.

Systems and methods for mitigating and reducing contamination of one or more components of overlay inspection systems are disclosed. Specifically, embodiments of the present disclosure may utilize a counterflow of purge gas through a counterflow nozzle to reduce the presence of contaminants within one or more portions of an inspection system. The system may include a source chamber, one or more vacuum chambers, an intermediate focus housing having an aperture, an illumination source configured to generate and direct illumination through the aperture in an illumination direction, and a counterflow nozzle configured to direct a counterflow of purge gas into the source chamber in a direction opposite the illumination direction.

Systems and methods for mitigating and reducing contamination of one or more components of overlay inspection systems are disclosed. Specifically, embodiments of the present disclosure may utilize a counterflow of purge gas through a counterflow nozzle to reduce the presence of contaminants within one or more portions of an inspection system. The system may include a source chamber, one or more vacuum chambers, an intermediate focus housing having an aperture, an illumination source configured to generate and direct illumination through the aperture in an illumination direction, and a counterflow nozzle configured to direct a counterflow of purge gas into the source chamber in a direction opposite the illumination direction.

An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

The present techniques relate to various aspects of forming and filling high-aspect ratio trench structures (e.g., trench structures having an aspect ratio of 20 or greater, including aspect ratios in the range of 20:1 up to and including 50:1 or greater) combined with trench opening widths ranging from 0.5 micron to 50 microns. In one implementation a method to fabricate high-aspect ratio trenches in silicon is provided using a patterned photoresist on evaporated aluminum. In accordance with this approach, a high-aspect ratio trench can be formed having vertical side walls and defect-free trench bottoms. In some instances it may be desirable to fill such high-aspect ratio trench structures with a metal or other substrate to provide certain functionality associated with the fill material. Further processes and structures are related in which such trench structures are filled using a mixture of high-Z nano-particles within an epoxy resin matrix.

A multilayer mirror for reflecting Extreme Ultraviolet (EUV) radiation and a method for producing the same are disclosed. In an embodiment a multilayer mirror includes a layer sequence having a plurality of alternating first layers and second layers, the first layers including lanthanum or a lanthanum compound and the second layers including boron, wherein the second layers are doped with carbon, and wherein a molar fraction of carbon in the second layers is 10% or less.