A radiation source apparatus includes a vessel, a laser source, a collector, and a reflective mirror. The vessel has an exit aperture. The laser source is at one end of the vessel and configured to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The reflective mirror is in the vessel and configured to reflect the laser beam toward an edge of the vessel.

A radiation source apparatus includes a vessel, a laser source, a collector, and a reflective mirror. The vessel has an exit aperture. The laser source is at one end of the vessel and configured to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The reflective mirror is in the vessel and configured to reflect the laser beam toward an edge of the vessel.

A mirror for extreme ultraviolet light includes: a substrate (41); a multilayer film (42) provided on the substrate and configured to reflect extreme ultraviolet light; and a capping layer (53) provided on the multilayer film, and the capping layer includes a first layer (61) containing an oxide of a metal, and a second layer (62) arranged between the first layer and the multilayer film and containing at least one of a boride of the metal and a nitride of the metal.

A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ<50 for selecting the dominant freestanding emission line, means for suppressing radiation with wavelengths outside of the EUV spectral region, zone plate optics for magnified imaging of the object with a resolution which corresponds to the width of an outermost zone of the zone plate, a numerical aperture corresponding to more than 1000 zones, and a EUV detector array for capturing the patterned object.

A phase contrast X-ray imaging system includes: an illumination source adapted to illuminate a region of interest; a diffraction grating adapted to receive illumination from the illuminated region of interest, the diffraction grating comprising a spatial structure having a first periodicity superimposed with a second periodicity that is different from the first periodicity; and a detector adapted to detect illumination passing through the diffraction grating, wherein the spatial structure is defined by varying height and/or pitch, and wherein the spatial structure imparts a first phase dependence based on the first periodicity and an additional phase dependence based on the second periodicity on the illumination passing through the diffraction grating.

A phase contrast X-ray imaging system includes: an illumination source adapted to illuminate a region of interest; a diffraction grating adapted to receive illumination from the illuminated region of interest, the diffraction grating comprising a spatial structure having a first periodicity superimposed with a second periodicity that is different from the first periodicity; and a detector adapted to detect illumination passing through the diffraction grating, wherein the spatial structure is defined by varying height and/or pitch, and wherein the spatial structure imparts a first phase dependence based on the first periodicity and an additional phase dependence based on the second periodicity on the illumination passing through the diffraction grating.

A method of manufacturing burr-edged reflecting tile elements for a mosaic X-ray lens configured for forming an X-ray beam comprises steps of: (a) providing a single crystal having first and second faces thereof being parallel therebetween; single crystal having crystallographic planes thereof being parallel to first and second faces of the single crystal; the first face dedicated for reflecting an X-ray beam to be incident thereto; (b) cutting the single crystal by means of a wire electrical discharging machine normally to the main faces. The step of cutting the single crystal comprises moving a wire within a cut in direction from the second face to the first face; such that burrs configured for reflecting the X-ray beam to be incident thereto are formed on edges of the cut.