A non-resonance photo-neutralizer for negative ion-based neutral beam injectors. The non-resonance photo-neutralizer utilizes a nonresonant photon accumulation, wherein the path of a photon becomes tangled and trapped in a certain space region, i.e., the photon trap. The trap is preferably formed by two smooth mirror surfaces facing each other with at least one of the mirrors being concave. In its simplest form, the trap is elliptical. A confinement region is a region near a family of normals, which are common to both mirror surfaces. The photons with a sufficiently small angle of deviation from the nearest common normal are confined. Depending on specific conditions, the shape of the mirror surface may be one of spherical, elliptical, cylindrical, or toroidal geometry, or a combination thereof.

A non-resonance photo-neutralizer for negative ion-based neutral beam injectors. The non-resonance photo-neutralizer utilizes a nonresonant photon accumulation, wherein the path of a photon becomes tangled and trapped in a certain space region, i.e., the photon trap. The trap is preferably formed by two smooth mirror surfaces facing each other with at least one of the mirrors being concave. In its simplest form, the trap is elliptical. A confinement region is a region near a family of normals, which are common to both mirror surfaces. The photons with a sufficiently small angle of deviation from the nearest common normal are confined. Depending on specific conditions, the shape of the mirror surface may be one of spherical, elliptical, cylindrical, or toroidal geometry, or a combination thereof.

A particle accelerator includes: a pair of magnetic poles disposed to face each other; a coil which surrounds each of the magnetic poles and generates a first magnetic flux density directing from the magnetic pole on one side to the magnetic pole on the other side; a foil stripper provided on a circling orbit of charged particles to strip off electrons from the charged particles; and a magnetic flux density adjustment unit which generates a second magnetic flux density directing in an opposite direction to a direction of the first magnetic flux density, in which the magnetic flux density adjustment unit makes an absolute value of magnetic flux density at a position of the foil stripper when viewed in a plan view smaller than an absolute value of the first magnetic flux density.

A particle accelerator includes: a pair of magnetic poles disposed to face each other; a coil which surrounds each of the magnetic poles and generates a first magnetic flux density directing from the magnetic pole on one side to the magnetic pole on the other side; a foil stripper provided on a circling orbit of charged particles to strip off electrons from the charged particles; and a magnetic flux density adjustment unit which generates a second magnetic flux density directing in an opposite direction to a direction of the first magnetic flux density, in which the magnetic flux density adjustment unit makes an absolute value of magnetic flux density at a position of the foil stripper when viewed in a plan view smaller than an absolute value of the first magnetic flux density.

An object of the present invention is to provide a charge stripping film in a charge stripping device of an ion beam, which has high heat resistance and no toxicity, with which there is no risk of activation, with which an ion beam can be made multivalent even if the charge stripping film is thin, and which is resistant to high-energy beam radiation over an extended period of time. The present invention comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film having a thermal conductivity of 20 W/mK or more in a film surface direction at 25 C., and a film thickness of the carbon film is more than 3 m and less than 10 m. The present invention also comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film produced by a polymer annealing method, and a film thickness of the carbon film is more than 3 m and less than 10 m.

An object of the present invention is to provide a charge stripping film in a charge stripping device of an ion beam, which has high heat resistance and no toxicity, with which there is no risk of activation, with which an ion beam can be made multivalent even if the charge stripping film is thin, and which is resistant to high-energy beam radiation over an extended period of time. The present invention comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film having a thermal conductivity of 20 W/mK or more in a film surface direction at 25 C., and a film thickness of the carbon film is more than 3 m and less than 10 m. The present invention also comprises a charge stripping film used in a device which strips a charge of an ion beam, wherein the charge stripping film is a rotary charge stripping film comprising a carbon film produced by a polymer annealing method, and a film thickness of the carbon film is more than 3 m and less than 10 m.

A charge stripping method includes irradiating a charge stripping film with an ion beam. The charge stripping film includes a single layer body of a graphitic film having a carbon component of at least 96 at % and a thermal conductivity in a film surface direction at 25 C. of at least 800 W/mK, or a laminated body of the graphitic film. The charge stripping film has a thickness of not less than 100 nm and less than 10 m, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of not more than 110.sup.5/K, and an area of at least 4 cm.sup.2.

A charge stripping method includes irradiating a charge stripping film with an ion beam. The charge stripping film includes a single layer body of a graphitic film having a carbon component of at least 96 at % and a thermal conductivity in a film surface direction at 25 C. of at least 800 W/mK, or a laminated body of the graphitic film. The charge stripping film has a thickness of not less than 100 nm and less than 10 m, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of not more than 110.sup.5/K, and an area of at least 4 cm.sup.2.

An extreme UV light generation device may include: a chamber having a plasma generation region at an inside of the chamber, the chamber receiving a target substance externally supplied to the plasma generation region; an outlet port provided on the chamber; a magnetic field generating unit configured to generate a magnetic field to converge cations on the outlet port, the cations being generated from the target substance that has been turned into plasma in the plasma generation region; an electron emission unit configured to emit electrons neutralizing the cations; and an exhaust tube joined to the outlet port and through which a neutralized substance obtained by neutralizing the cations flows.

An extreme UV light generation device may include: a chamber having a plasma generation region at an inside of the chamber, the chamber receiving a target substance externally supplied to the plasma generation region; an outlet port provided on the chamber; a magnetic field generating unit configured to generate a magnetic field to converge cations on the outlet port, the cations being generated from the target substance that has been turned into plasma in the plasma generation region; an electron emission unit configured to emit electrons neutralizing the cations; and an exhaust tube joined to the outlet port and through which a neutralized substance obtained by neutralizing the cations flows.