Patent classifications
G01J1/44
Display assembly and manufacturing method thereof, electronic device
Provided are a display assembly, a method for manufacturing a display assembly and an electronic device. The display assembly includes: a pixel array including a plurality of pixel units; a photosensitive array including a plurality of photosensitive units, at least one of the photosensitive unit is disposed in a gap between two adjacent pixel units of the pixel array for detecting ambient light through the pixel array.
Display assembly and manufacturing method thereof, electronic device
Provided are a display assembly, a method for manufacturing a display assembly and an electronic device. The display assembly includes: a pixel array including a plurality of pixel units; a photosensitive array including a plurality of photosensitive units, at least one of the photosensitive unit is disposed in a gap between two adjacent pixel units of the pixel array for detecting ambient light through the pixel array.
Receiving device, transceiver device, communication system, portable terminal device, and photodetection element
A receiving device includes a magnetic element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer is configured to be irradiated with light containing an optical signal with a change of intensity of the light, and wherein the receiving device is configured to receive the optical signal on a basis of an output voltage from the magnetic element.
Light sensor with dark current elimination having duo switch-capacitor circuits and a reverse capacitor
The present invention provides a light sensor with dark current elimination. A dark current from a covered photodiode and a sensed current from a photodiode are respectively transformed to a dark voltage and a sensed voltage by a controlled integration circuit. A reverse capacitor receives the dark voltage and the sensed voltage to cancel out for each other, and outputs a corrected sensing voltage.
Light sensor with dark current elimination having duo switch-capacitor circuits and a reverse capacitor
The present invention provides a light sensor with dark current elimination. A dark current from a covered photodiode and a sensed current from a photodiode are respectively transformed to a dark voltage and a sensed voltage by a controlled integration circuit. A reverse capacitor receives the dark voltage and the sensed voltage to cancel out for each other, and outputs a corrected sensing voltage.
LASER DETECTING CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
A laser detecting circuit is provided. The laser detecting circuit includes a latch circuit with a first inverter configured to invert a first output signal at a first node to generate a second output signal at a second node, and a second inverter configured to generate the first output signal based on the second output signal. The second inverter includes a plurality of PMOS transistors connected in series between a first source voltage and the first node, and a plurality of NMOS transistors. A gate of each of the plurality of PMOS transistors is connected to the second node, and a drain of each of the plurality of NMOS transistors is connected to the first node. The plurality of NMOS transistors includes dummy NMOS transistors and normal NMOS transistors.
DETECTION DEVICE
According to an aspect, a detection device includes: photodiodes provided on a substrate; transistors corresponding to the photodiodes; a first organic insulating film that covers the transistors; first electrodes that are between the first organic insulating film and the photodiodes in a direction orthogonal to the substrate and are provided corresponding to the photodiodes; a second electrode provided so as to extend across the photodiodes; an insulating film between adjacent first electrodes, and a second organic insulating film that covers an inside of a contact hole provided in the first organic insulating film. The photodiodes includes a first carrier transport layer, an active layer, and a second carrier transport layer that are stacked on the substrate. The first carrier transport layer, the active layer, and the second carrier transport layer are provided so as to cover each of the first electrodes, the insulating film, and the second organic insulating film.
METHODS FOR DETERMINING PHOTODETECTOR GAIN-VOLTAGE USING OPTICAL SIGNALS
Aspects of the present disclosure include methods for determining photodetector gain for a plurality of photodetectors in a light detection system. Methods according to certain embodiments include applying a reference voltage to each photodetector in the light detection system, generating a reference data signal for each photodetector at the reference voltage, irradiating with a light source the photodetectors at a plurality of different applied voltages, generating output data signals for each photodetector at each of the plurality of different voltages and calculating gain of the photodetectors at each of the plurality of different applied voltages based on the output data signals for each photodetector at each applied voltage and the reference data signal. Systems (e.g., particle analyzers) having a light source and a light detection system that includes a plurality of photodetectors for practicing the subject methods are also described. Non-transitory computer readable storage medium are also provided.
METHODS FOR DETERMINING PHOTODETECTOR GAIN-VOLTAGE USING OPTICAL SIGNALS
Aspects of the present disclosure include methods for determining photodetector gain for a plurality of photodetectors in a light detection system. Methods according to certain embodiments include applying a reference voltage to each photodetector in the light detection system, generating a reference data signal for each photodetector at the reference voltage, irradiating with a light source the photodetectors at a plurality of different applied voltages, generating output data signals for each photodetector at each of the plurality of different voltages and calculating gain of the photodetectors at each of the plurality of different applied voltages based on the output data signals for each photodetector at each applied voltage and the reference data signal. Systems (e.g., particle analyzers) having a light source and a light detection system that includes a plurality of photodetectors for practicing the subject methods are also described. Non-transitory computer readable storage medium are also provided.
DETECTION DEVICE
According to an aspect, a detection device, includes a flexible substrate, a plurality of light sensors provided in a detection region of the flexible substrate, a terminal that is provided at one end of the flexible substrate and is capable of being coupled to an external device, and a peripheral circuit that is provided on the flexible substrate and located between the detection region and the terminal.