A thermal processing apparatus according to the present invention includes: a support including quartz and being for supporting a substrate from a first side within a chamber; a flash lamp disposed on a second side and being for heating the substrate by irradiating the substrate with a flash of light; a continuous illumination lamp disposed on the second side of the substrate and being for continuously heating the substrate; a light blocking member disposed to surround the substrate in plan view; and a radiation thermometer disposed on the first side of the substrate and being for measuring a temperature of the substrate, wherein the radiation thermometer measures the temperature of the substrate by receiving light at a wavelength capable of being transmitted through the support. Accuracy of measurement of the temperature of the substrate can thereby be increased.

A semiconductor module includes a first circuit carrier including one or more heat generating elements mounted on an upper surface of the first circuit carrier, a second circuit carrier mounted over the first circuit carrier and being vertically spaced apart from the upper surface of the first circuit carrier, and a temperature sensor that is fixedly attached to the second circuit carrier and is arranged in a vertical space between the lower surface of the second circuit carrier and the upper surface of the first circuit carrier, wherein the temperature sensor is arranged in sufficient proximity to a first one of the heat generating elements to obtain a direct temperature measurement from the first one of the heat generating elements.

A method of depositing an epitaxial material layer using pyrometer-based control. The method includes cleaning a reaction chamber of a reactor system, and, after the cleaning, providing a substrate within the reaction chamber. The method includes stabilizing a temperature of the substrate relative to a target deposition temperature. During stabilization, the heater assembly is operated with control signals to operate heaters in the heater assembly that are generated based on a direct measurement of the temperature of the substrate, such as with one to three pyrometers. The method includes, after the stabilizing of the temperature of the substrate, depositing an epitaxial material layer on a surface of the substrate. Then, for an additional number of substrates, the method involves repeating the steps of providing a substrate within the reaction chamber, stabilizing the temperature of the substrate, and depositing an epitaxial material layer on the substrate followed by another chamber cleaning.

Apparatuses and methods for measuring substrate temperature are provided. In one or more embodiments, an apparatus for estimating a temperature is provided and includes a plurality of electromagnetic radiation sources positioned to emit electromagnetic radiation toward a reflection plane, and a plurality of electromagnetic radiation detectors. Each electromagnetic radiation detector is positioned to sample the electromagnetic radiation emitted by a corresponding electromagnetic radiation source of the plurality of electromagnetic radiation sources. The apparatus also includes a pyrometer positioned to receive electromagnetic radiation emitted by plurality of electromagnetic radiation sources and reflected from a substrate disposed at a reflection plane and electromagnetic radiation emitted by the substrate. The apparatus includes a processor configured to estimate a temperature of the substrate based on the electromagnetic radiation emitted by the substrate. Methods of estimating temperature are also provided.

Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.

A system and method for thermally calibrating semiconductor process chambers is disclosed. In various embodiments, a first non-contact temperature sensor can be calibrated to obtain a first reading with the semiconductor process chamber. The first reading can be representative of a first temperature at a first location. The first non-contact temperature sensor can be used to obtain a second reading representative of a second temperature of an external thermal radiation source. The second temperature of the external thermal radiation source can be adjusted to a first temperature setting of the external radiation source such that the second reading substantially matches the first reading. Additional non-contact temperature sensor(s) can be directed at the external thermal radiation source and can be adjusted such that the reading(s) of the additional non-contact sensors are calibrated and matched to one another.

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.

A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

An edge radiation thermometer performs measurements before a semiconductor wafer is transported into a chamber. The edge radiation thermometer performs the measurements while the semiconductor wafer is supported by lift pins and while the semiconductor wafer is placed on a susceptor, after the semiconductor wafer is transported into the chamber. A controller calculates a reflectivity of the semiconductor wafer based on these measurement values. Then, the controller calculates an intensity of an ambient light receive by the edge radiation thermometer, based on the reflectivity and an intensity of synchrotron radiation radiated from a quartz window. Subsequently, the controller subtracts the intensity of the ambient light from an intensity of light received by of the edge radiation thermometer during heat treatment on the semiconductor wafer to calculate the temperature of the semiconductor wafer.

A substrate is coated with a multilayer structure which has layers of a first portion and layers of a second portion that are deposited on the layers of the first portion. During the deposition of at least one layer of the second portion, at least one optical measuring apparatus measures an emissivity value and a reflectance value on the broad side of the substrate, which broad side comprises the layer. Using a previously determined correction value, an actual value of a temperature of the broad side of the substrate is calculated and, using the actual value, a heating apparatus is controlled in order to control the temperature of the substrate to match a target value of the temperature of the broad side of the substrate. The correction value is determined during the deposition of the first portion, which is carried out immediately before the deposition of the second portion.