An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

A light detection device includes a Fabry-Perot interference filter, a light detector, a spacer that has a placement surface on which a portion outside a light transmission region in a bottom surface of the interference filter is placed, and an adhesive member that adheres the interference filter and the spacer to each other. Elastic modulus of the adhesive member is smaller than elastic modulus of the spacer. At least a part of a lateral surface of the interference filter is located on the placement surface such that a part of the placement surface of the spacer is disposed outside the lateral surface. The adhesive member is disposed in a corner portion formed by the lateral surface of the interference filter and the part of the placement surface of the spacer and contacts each of the lateral surface and the part of the placement surface.

Provided are a terahertz wave detection device and a terahertz wave detection system to execute checking at high speed with high sensitivity and accuracy and to execute omnidirectional inspection without requiring a large checking system. A flexible array sensor (30) includes: a terahertz wave detection element (10) having a flexible single-walled carbon nanotube film (11), and a first electrode (12) and a second electrode (13) disposed to face each other on a two-dimensional plane of the single-walled carbon nanotube film (11); and a flexible substrate (20) having flexibility to support the terahertz wave detection element (10) so as to be freely curved. The flexible substrate (20) is preferably formed in a curved or cylindrical shape, so that the terahertz wave detection elements (10) are arrayed on the flexible substrate 20 formed in a curved or cylindrical shape.

The invention concerns a detection device for detecting electromagnetic radiation, comprising a substrate, an array of thermal detectors, each thermal detector comprising a suspended absorbent membrane and a reflective layer. The detection device comprises at least one opaque vertical wall, arranged on the substrate and extending longitudinally between two adjacent thermal detectors, and produced from a material that is opaque to the electromagnetic radiation to be detected.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. The light source can be attached to a printed circuit board. Optionally, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter.

A MEMS device according to an example embodiment of the present disclosure includes: a lower substrate; an infrared sensor formed on the lower substrate; and a lower bonding pad disposed to cover the infrared sensor. The infrared sensor includes: a metal pad formed on an upper surface of the lower substrate and electrically connected to a detection circuit; a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band; an absorption plate disposed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; and an anchor formed on the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other. The reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer.

Pyroelectric detection device, comprising at least: a suspended membrane; a pyroelectric detection element located on the suspended membrane and comprising at least one portion of pyroelectric material located between first and second electrodes, the first electrode being located between said at least one portion of pyroelectric material and the suspended membrane; and in which the membrane and the pyroelectric detection element are subjected to a higher compression stress than a limiting buckling stress of the suspended membrane and the pyroelectric detection element and together form a bistable structure.

The present invention relates to a plane source blackbody. The plane source blackbody comprises a panel, a black lacquer layer, and a carbon nanotube array. The panel comprises a first surface and a second surface opposite to the first surface. The black lacquer layer and the carbon nanotube array are located on the first surface. The carbon nanotube array comprises a plurality of carbon nanotubes. Each of the carbon nanotubes comprises a top end and a bottom end. The bottom end of each of the carbon nanotubes is immersed into the black lacquer layer and the top end of each of the carbon nanotubes is exposed out from the black lacquer layer. The plurality of carbon nanotubes are substantially perpendicular to the first surface of the pane.

A vacuum packaged infrared sensor array with excellent performances is described. The individual pixel of the infrared sensor array has a thermopile made of recrystallized amorphous silicon resulting in low resistance, low thermal noise, high integration and high sensitivity. The vacuum in the packaged infrared sensor array is enhanced by low temperature oxidization of a porous silicon layer formed in a lid silicon substrate which is bonded with the infrared sensor array silicon substrate. The driving force for lowering oxidization temperature is reduction in surface energy of porous silicon. It has been reported that the surface energy is 0.0001 J/cm.sup.2 for porous silicon and 0.2 J/cm.sup.2 for planar crystal silicon.