Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter.

A bolometer pixel trigger array includes a substrate, an electrically conductive contact pad formed on the substrate, and bolometer formed on the substrate. The bolometer includes at least one thermally conductive trigger arm having a fixed end coupled to a portion of the bolometer and an electrically conductive free end configured to deflect with respect to the fixed end. At least one trigger arm establishes different operating states of the bolometer pixel trigger in response to the at least one trigger arm realizing different temperatures. The different operating states are configured to change an electrical connection between the at least one trigger arm and the contact pad.

We disclose herein an infra-red (IR) device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane which is adjacent, or directly above, or below the etched cavity portion of the substrate. The device further comprises a reflective layer on or in or above or below the dielectric membrane to enhance emission or absorption of infrared light at one or more wavelengths.

A bolometer pixel trigger array includes a substrate, an electrically conductive contact pad formed on the substrate, and bolometer formed on the substrate. The bolometer includes at least one thermally conductive trigger arm having a fixed end coupled to a portion of the bolometer and an electrically conductive free end configured to deflect with respect to the fixed end. At least one trigger arm establishes different operating states of the bolometer pixel trigger in response to the at least one trigger arm realizing different temperatures. The different operating states are configured to change an electrical connection between the at least one trigger arm and the contact pad.

A light detector includes: a substrate; and a membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line interposed therebetween, a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, a light absorption layer, and a separation layer which is disposed between each of the first wiring layer and the second wiring layer and the light absorption layer, and in which the light absorption layer includes a first region which spreads to the side opposite to the second wiring layer with respect to the first wiring layer and a second region which spreads to the side opposite to the first wiring layer with respect to the second wiring layer.

A thermopile infrared individual sensor includes a housing filled with a gaseous medium. It has optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, infrared-sensitive regions of which are each spanned by at least one beam over a cavity in a carrier body. The thermopile infrared sensor uses monolithic Si-micromechanics technology for contactless temperature measurements. In the case of a sufficiently large receiver surface, this outputs a high signal with a high response speed. A plurality of individual adjacent sensor cells are combined with respectively one infrared-sensitive region with thermopile structures on the membrane on a common carrier body of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap sealed with a base plate with a common gaseous medium.

An infrared solid state imaging device includes: a first PN junction diode has a first shortest length that is a shortest length from a first junction surface to a second junction surface; a PN junction diode has a second shortest length that is a shortest length from the second junction surface to a third junction surface, the second shortest length being different from the first shortest length; an insulating film serving as an element isolation region which establishes electrical isolation between a first region of the first PN junction diode and a fourth region of the second PN junction diode, and so on; and a metal wire provided on a second region of the first PN junction diode and a third region of the second PN junction diode, wherein the first PN junction diode and the second PN junction diode are connected in series.

The invention concerns a detection device for detecting electromagnetic radiation, comprising a substrate, an array of thermal detectors, each thermal detector comprising a suspended absorbent membrane and a reflective layer. The detection device comprises at least one opaque vertical wall, arranged on the substrate and extending longitudinally between two adjacent thermal detectors, and produced from a material that is opaque to the electromagnetic radiation to be detected.

A method of imaging infrared light is provided which comprises: exciting ultrasonic waves in a metal pillar (e.g., Cu pillar); measuring the Time-of-Flight (ToF) of the ultrasonic wave in the waveguide; whereas the ToF is a function of incident Infrared light energy on the waveguide, and reporting the infrared light energy to capture an image. An apparatus of imaging infrared light is provided which comprises: a transducer; a waveguide coupled with the transducer; and a pixel electronic circuit coupled to the transducer, wherein the transducer includes one or more of: PZT, LiNb, AlN, or GaN.