An infrared imaging microbolometer integrating a membrane assembled in suspension above a substrate by means of holding arms attached to anchoring nails is disclosed. The membrane includes a support layer crossing the upper end of the anchoring nails. It also includes an absorber or electrode deposited on the support layer and on the anchoring nails with a pattern forming at least two electrodes. It further includes a dielectric layer deposited on the absorber or electrode and on the support layer, at least two conductive vias formed through the dielectric layer in contact with the at least two electrodes, and a thermometric or thermoresistive material arranged on a planar surface formed at the level of the upper ends of the conductive vias.

An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

A diode (11) is provided on a substrate (1) and thermally insulated from the substrate (1). A positive feedback circuit (18) provides a positive feedback loop so that when a current of the diode (11) decreases due to a change in temperature of the diode (11), the positive feedback circuit (18) further decreases the current of the diode (11), and when the current of the diode (11) increases, the positive feedback circuit (18) further increases the current of the diode (11).

In an image processing apparatus, a first correction unit corrects imaging data acquired from an infrared imaging device, based on a first correction table, and outputs first corrected data. A second correction unit generates a second correction table for the imaging data in a state in which a shutter is closed, and outputs second corrected data based on the second correction table. A saturated region detection unit detects a saturated region in the imaging data. A shutter control unit performs closing control for the shutter, based on a result of detection of the saturated region. An abnormal pixel detection unit detects whether or not the imaging data acquired in the state in which the shutter is closed includes an abnormal pixel. A selection unit selects and outputs either the first corrected data or the second corrected data in accordance with a result of detection by the abnormal pixel detection unit.

A sensor configured to sense heat or infrared light including a substrate includes a plurality of recess portions; a cavity inside the substrate along a bottom surface and opposing side surfaces of the substrate; a lower reflective layer disposed on at least one of an upper surface of the bottom surface of the substrate, a lower surface of the bottom surface of the substrate, and a surface opposite to the lower surface of the bottom surface of the substrate; a first electrode and a second electrode disposed inside both side surfaces of the recess portion and facing each other; a pixel structure configured to sense heat or infrared light inside the recess portion and embedded in the substrate; and a planarization layer covering the entire upper portion of the substrate.

A sensor configured to sense heat or infrared light including a substrate includes a plurality of recess portions; a cavity inside the substrate along a bottom surface and opposing side surfaces of the substrate; a lower reflective layer disposed on at least one of an upper surface of the bottom surface of the substrate, a lower surface of the bottom surface of the substrate, and a surface opposite to the lower surface of the bottom surface of the substrate; a first electrode and a second electrode disposed inside both side surfaces of the recess portion and facing each other; a pixel structure configured to sense heat or infrared light inside the recess portion and embedded in the substrate; and a planarization layer covering the entire upper portion of the substrate.

Imager optical systems and methods are provided. In one example, an imaging device includes a window configured to transmit electromagnetic radiation associated with a scene. The imaging device further includes a lens system. The lens system includes a first lens element configured to receive the electromagnetic radiation from the window and transmit the electromagnetic radiation. An aperture stop is positioned between the window and a surface of the first lens element adjacent to the window. The lens system further includes a second lens element adjacent to the first lens element and configured to receive the electromagnetic radiation and direct the electromagnetic radiation to the detector array. The imaging device further includes a detector array including detectors. Each detector is configured to receive the electromagnetic radiation from the lens system and generate a thermal image based on the electromagnetic radiation. Related methods and systems are also provided.

A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (V.sub.T) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces.