G01J5/20

Sequential beam splitting in a radiation sensing apparatus
11703392 · 2023-07-18 · ·

Systems, methods, and apparatuses for providing electromagnetic radiation sensing using sequential beam splitting. The apparatuses can include a micro-mirror chip having a plurality of light reflecting surfaces, an image sensor having an imaging surface, and a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit includes a plurality of beamsplitters aligned along a horizontal axis that is parallel to the micro-mirror chip and the imaging surface. The beamsplitters implement the sequential beam splitting. Because of the structure of the beamsplitter unit, the height of the arrangement of the micro-mirror chip, the beamsplitter unit, and the image sensor is reduced such that the arrangement can fit within a mobile device. Within a mobile device, the apparatuses can be utilized for human detection, fire detection, gas detection, temperature measurements, environmental monitoring, energy saving, behavior analysis, surveillance, information gathering and for human-machine interfaces.

Cigarette temperature detection device and method

A cigarette temperature detection device including multiple cylindrical convex lenses is provided, wherein each of the cylindrical convex lenses has a thicker central wall between two thinner end walls formed by rotating a parallel line at a predetermined distance around a long axis of an elliptical-like section resulting from cutting the circular convex lens by a plane perpendicular to a centerline. The disclosed cigarette temperature detection device allows accurate and reliable detection of a temperature of an entire circumferential surface of a cigarette on site.

LONG WAVELENGTH INFRARED SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME

A long wavelength infrared sensor includes a first magnetoresistive unit; a second magnetoresistive unit; and a light absorption layer that absorbs light and emits heat, wherein the first magnetoresistive unit includes a first magnetoresistive element and a second magnetoresistive element electrically connected to each other, the second magnetoresistive unit includes a third magnetoresistive element and a fourth magnetoresistive element electrically connected to each other, the first and third magnetoresistive elements each have an antiparallel state of magnetization direction, the second and fourth magnetoresistive elements each have a parallel state of magnetization direction, and the first magnetoresistive element is electrically connected to the third magnetoresistive element by way of the second magnetoresistive element.

DEVICE AND METHOD FOR DETECTING ENERGY BEAM
20220404205 · 2022-12-22 ·

A device for detecting energy beam is provided. The device comprises a carbon nanotube structure, a support structure and an infrared detector. The carbon nanotube structure comprises a plurality of carbon nanotubes, and an extending direction of each carbon nanotube is parallel to a direction of an energy beam to be detected. The support structure is configured to support the carbon nanotube structure, and make a portion of the carbon nanotube structure suspended in the air. The infrared detector is located below and spaced apart from the carbon nanotube structure. The infrared detector is configured to detect a temperature of a suspended portion of the carbon nanotube structure, and image according to a temperature distribution of the carbon nanotube structure. A method for detecting energy beam is also provided.

DEVICE AND METHOD FOR DETECTING ENERGY BEAM
20220404205 · 2022-12-22 ·

A device for detecting energy beam is provided. The device comprises a carbon nanotube structure, a support structure and an infrared detector. The carbon nanotube structure comprises a plurality of carbon nanotubes, and an extending direction of each carbon nanotube is parallel to a direction of an energy beam to be detected. The support structure is configured to support the carbon nanotube structure, and make a portion of the carbon nanotube structure suspended in the air. The infrared detector is located below and spaced apart from the carbon nanotube structure. The infrared detector is configured to detect a temperature of a suspended portion of the carbon nanotube structure, and image according to a temperature distribution of the carbon nanotube structure. A method for detecting energy beam is also provided.

DEVICES, SYSTEMS, AND METHODS FOR CALIBRATING AND MAINTAINING A TEMPERATURE OF MATERIALS IN AN ADDITIVE MANUFACTURING BUILD CHAMBER
20220395904 · 2022-12-15 · ·

Devices, systems, and methods for calibrating for an electron beam additive manufacturing system. The electron beam manufacturing system includes electron beam guns. A calibration system includes an optical pyrometer. The optical pyrometer captures thermal radiation emitted from raw material. An analysis component is communicatively coupled to the optical pyrometer. The analysis component is programmed to determine calibration parameters from information from the optical pyrometer and a phase transition temperature.

DEVICES, SYSTEMS, AND METHODS FOR CALIBRATING AND MAINTAINING A TEMPERATURE OF MATERIALS IN AN ADDITIVE MANUFACTURING BUILD CHAMBER
20220395904 · 2022-12-15 · ·

Devices, systems, and methods for calibrating for an electron beam additive manufacturing system. The electron beam manufacturing system includes electron beam guns. A calibration system includes an optical pyrometer. The optical pyrometer captures thermal radiation emitted from raw material. An analysis component is communicatively coupled to the optical pyrometer. The analysis component is programmed to determine calibration parameters from information from the optical pyrometer and a phase transition temperature.

Light detector

A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

Light detector

A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

METHOD OF COLLECTING SIGNALS SENSED FROM SENSING TRANSISTORS, CORRESPONDING SENSOR DEVICE AND IMAGING CAMERA

Current signals indicative of sensed physical quantities are collected from sensing transistors in an array of sensing transistors. The sensing transistors have respective control nodes and current channel paths therethrough between respective first nodes and a second node common to the sensing transistors. A bias voltage level is applied to the respective first nodes of the sensing transistors in the array and one sensing transistor in the array of sensing transistors is selected. The selected sensing transistor is decoupled from the bias voltage level, while the remaining sensing transistors in the array of sensing transistors maintain coupling to the bias voltage level. The respective first node of the selected sensing transistor in the array of sensing transistors is coupled to an output node, and an output current signal is collected from the output node.