Current signals indicative of sensed physical quantities are collected from sensing transistors in an array of sensing transistors. The sensing transistors have respective control nodes and current channel paths therethrough between respective first nodes and a second node common to the sensing transistors. A bias voltage level is applied to the respective first nodes of the sensing transistors in the array and one sensing transistor in the array of sensing transistors is selected. The selected sensing transistor is decoupled from the bias voltage level, while the remaining sensing transistors in the array of sensing transistors maintain coupling to the bias voltage level. The respective first node of the selected sensing transistor in the array of sensing transistors is coupled to an output node, and an output current signal is collected from the output node.

A terahertz sensor based on a dielectric metasurface, including a sensing element, and a thermosensitive circuit connected to the sensing element. The sensing element is composed of a cylindrical semiconductor doped with a conductive material. The conductive material is configured to change conductivity of the cylindrical semiconductor to enable the cylindrical semiconductor to absorb electromagnetic waves in terahertz region.

Sensor interconnects and supports and methods of making them utilize phonon disruptors for increased thermal resistance while maintaining acceptable electrical signal quality in materials. Phonon disruptors include the use of an electrically conductive alloy material or intermetallic material of at least two or more elements to promote scattering of phonons. These materials are selected to scatter heat carriers while allowing electrons to pass through the material.

Sensor interconnects and supports and methods of making them utilize phonon disruptors for increased thermal resistance while maintaining acceptable electrical signal quality in materials. Phonon disruptors include the use of an electrically conductive alloy material or intermetallic material of at least two or more elements to promote scattering of phonons. These materials are selected to scatter heat carriers while allowing electrons to pass through the material.

An infrared solid state imaging device includes: a first PN junction diode has a first shortest length that is a shortest length from a first junction surface to a second junction surface; a PN junction diode has a second shortest length that is a shortest length from the second junction surface to a third junction surface, the second shortest length being different from the first shortest length; an insulating film serving as an element isolation region which establishes electrical isolation between a first region of the first PN junction diode and a fourth region of the second PN junction diode, and so on; and a metal wire provided on a second region of the first PN junction diode and a third region of the second PN junction diode, wherein the first PN junction diode and the second PN junction diode are connected in series.

An infrared solid state imaging device includes: a first PN junction diode has a first shortest length that is a shortest length from a first junction surface to a second junction surface; a PN junction diode has a second shortest length that is a shortest length from the second junction surface to a third junction surface, the second shortest length being different from the first shortest length; an insulating film serving as an element isolation region which establishes electrical isolation between a first region of the first PN junction diode and a fourth region of the second PN junction diode, and so on; and a metal wire provided on a second region of the first PN junction diode and a third region of the second PN junction diode, wherein the first PN junction diode and the second PN junction diode are connected in series.

Techniques for facilitating burn-in mitigation and associated imaging systems and methods are provided. In one example, a method applying a bias signal to a sensor array of an imaging device to increase a temperature of the sensor array to perform burn-in mitigation. The method further includes reducing the temperature of the sensor array. The method further includes determining whether a burn-in is present in the sensor array. Related systems and devices are also provided.

Systems and methods include an infrared camera configured to capture an infrared image of a scene, a visible-light camera configured to capture a visible-light image of the scene, and a logic device configured to simultaneously capture a pair of images of the scene comprising the infrared image of the scene and the visible image of the scene, align the pair of images so that a pixel location in one of the pair of images has a corresponding pixel location in the other image, classify the visible image, annotate the infrared image based, at least in part, on the classification of the visible image, and add the annotated infrared image to a neural network training dataset for use in training a neural network for infrared image classification. A beamsplitter is arranged to reflect a first image of the scene towards the infrared camera and pass through a second image of the scene to the visible-light camera, and a first blackbody is attached thereto and positioned in a field of view of the infrared camera.

Systems and methods include an infrared camera configured to capture an infrared image of a scene, a visible-light camera configured to capture a visible-light image of the scene, and a logic device configured to simultaneously capture a pair of images of the scene comprising the infrared image of the scene and the visible image of the scene, align the pair of images so that a pixel location in one of the pair of images has a corresponding pixel location in the other image, classify the visible image, annotate the infrared image based, at least in part, on the classification of the visible image, and add the annotated infrared image to a neural network training dataset for use in training a neural network for infrared image classification. A beamsplitter is arranged to reflect a first image of the scene towards the infrared camera and pass through a second image of the scene to the visible-light camera, and a first blackbody is attached thereto and positioned in a field of view of the infrared camera.

An electromagnetic wave sensor 1 has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.