A method of imaging infrared light is provided which comprises: exciting ultrasonic waves in a metal pillar (e.g., Cu pillar); measuring the Time-of-Flight (ToF) of the ultrasonic wave in the waveguide; whereas the ToF is a function of incident Infrared light energy on the waveguide, and reporting the infrared light energy to capture an image. An apparatus of imaging infrared light is provided which comprises: a transducer; a waveguide coupled with the transducer; and a pixel electronic circuit coupled to the transducer, wherein the transducer includes one or more of: PZT, LiNb, AlN, or GaN.

A method of imaging infrared light is provided which comprises: exciting ultrasonic waves in a metal pillar (e.g., Cu pillar); measuring the Time-of-Flight (ToF) of the ultrasonic wave in the waveguide; whereas the ToF is a function of incident Infrared light energy on the waveguide, and reporting the infrared light energy to capture an image. An apparatus of imaging infrared light is provided which comprises: a transducer; a waveguide coupled with the transducer; and a pixel electronic circuit coupled to the transducer, wherein the transducer includes one or more of: PZT, LiNb, AlN, or GaN.

In accordance with heat received from a target object, a visible light absorption element 10 changes a frequency component of visible light to reflect or transmit. The visible light absorption element 10 possesses a resonance frequency included in a visible light frequency region. The visible light absorption element 10 absorbs visible light of the resonance frequency. The visible light absorption element 10 thermally deforms due to temperature change to thereby change the resonance frequency, and absorbs visible light of the changed resonance frequency.

In accordance with heat received from a target object, a visible light absorption element 10 changes a frequency component of visible light to reflect or transmit. The visible light absorption element 10 possesses a resonance frequency included in a visible light frequency region. The visible light absorption element 10 absorbs visible light of the resonance frequency. The visible light absorption element 10 thermally deforms due to temperature change to thereby change the resonance frequency, and absorbs visible light of the changed resonance frequency.

A proximity sensor includes a circuit board; a light-emitting element and a light-receiving element on the circuit board; a light barrier; molding portions; and a transparent board disposed on the molding portions and configured to form an air gap with the light-receiving element. The light-receiving element includes: a substrate having a light sensing area and a temperature sensing area; a first input electrode and a first output electrode which are aligned in the light sensing area and apart from each other with a first delay gap therebetween; a sensing film covering at least some portions of the first input electrode and the first output electrode; and a second input electrode and a second output electrode which are aligned in the temperature sensing area and apart from each other with a second delay gap therebetween. The second delay gap is exposed to air.

A multispectral optical sensor is disclosed. In one embodiment, the multispectral optical sensor includes a piezoelectric material, a first sensing layer and a second sensing layer spaced apart from each other on the piezoelectric material and configured to change the propagation speed of the acoustic wave propagated through the piezoelectric material by receiving ultraviolet light and visible light, respectively. The multiple optical sensor further includes a first acoustic wave output part and a second acoustic wave output part disposed on the piezoelectric material respectively corresponding to the first and second sensing layers and configured to generate an electrical signal based on the changed acoustic wave. The multiple optical sensor measures the intensity of ultraviolet and visible light using a single sensor by detecting the change in frequency, and measures the frequency change in the acoustic wave using zinc oxide, gallium nitride), or cadmium sulfide nanoparticles.

A multispectral optical sensor is disclosed. In one embodiment, the multispectral optical sensor includes a piezoelectric material, a first sensing layer and a second sensing layer spaced apart from each other on the piezoelectric material and configured to change the propagation speed of the acoustic wave propagated through the piezoelectric material by receiving ultraviolet light and visible light, respectively. The multiple optical sensor further includes a first acoustic wave output part and a second acoustic wave output part disposed on the piezoelectric material respectively corresponding to the first and second sensing layers and configured to generate an electrical signal based on the changed acoustic wave. The multiple optical sensor measures the intensity of ultraviolet and visible light using a single sensor by detecting the change in frequency, and measures the frequency change in the acoustic wave using zinc oxide, gallium nitride), or cadmium sulfide nanoparticles.

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum.

Passive detector structures for imaging systems are provided which implement unpowered, passive front-end detector structures with direct-to-digital measurement data output for detecting incident photonic radiation in various portions (e.g., thermal (IR), near IR, UV and visible light) of the electromagnetic spectrum.

A proximity sensor includes a circuit board; a light-emitting element and a light-receiving element on the circuit board; a light barrier; molding portions; and a transparent board disposed on the molding portions and configured to form an air gap with the light-receiving element. The light-receiving element includes: a substrate having a light sensing area and a temperature sensing area; a first input electrode and a first output electrode which are aligned in the light sensing area and apart from each other with a first delay gap therebetween; a sensing film covering at least some portions of the first input electrode and the first output electrode; and a second input electrode and a second output electrode which are aligned in the temperature sensing area and apart from each other with a second delay gap therebetween. The second delay gap is exposed to air.