An example method of operation may include detecting a user touch in a first area based upon sensor data from one or more sensors of a first type, waking up one or more sensors of a second type configured to measure across some or all of the first area in response to the detecting, obtaining additional sensor data from the one or more sensors of the second type, and determining a location associated with the user touch based in part upon the sensor data from the one or more sensors of the second type.

Provided is a temperature detection circuit that includes: a series connection circuit that is connected between a power supply voltage input terminal and ground and includes a temperature detection transistor and a first resistance element; and a current bypass circuit that includes a first transistor that is connected in parallel with the temperature detection element and allows a bypass current to flow therethrough. The temperature detection circuit outputs a temperature detection signal from a connection point between the temperature detection transistor and the first resistance element.

A semiconductor device includes a plurality of active area structures. One or more active devices include portions of the plurality of active area structures. A metal layer is formed on the plurality of active area structures and separated from the one or more active devices by one or more dummy gate layers. The metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.

An example device includes a first temperature sensor configured to provide a first current signal indicative of a temperature of a first circuit based on a voltage of a first temperature sensing element. The first circuit includes a power switch device and the first temperature sensing element. A second temperature sensor is configured to provide a second current signal indicative of temperature of a second circuit based on a voltage of a second temperature sensing element. The second circuit includes the second temperature sensing element. A trim circuit is configured to trim current in at least one of the first temperature sensor or the second temperature sensor to compensate for mismatch between temperature coefficients of the first and second temperature sensing elements.

The present disclosure relates to a compact temperature sensor displaying a temperature-resistance relationship. The temperature sensor comprises cross-coupled CMOS technology exhibits negative resistance, resulting in resistance-sensitive temperature sensing and amplification. The temperature sensor can be tuned to operate across a wide range of temperatures via modulation of a biasing current. The present disclosure further relates to subthreshold operation of CMOS technology.

A temperature detection circuit includes a first current path and a second current path. The first current path includes a first transistor with a control terminal coupled to receive a reference voltage and includes a temperature sensing device. The second current path includes a second transistor with a control terminal coupled to a node of the first current path. The second current path includes a node that provides an indication of a detected temperature.

A method for determining a temperature of an Insulated-Gate Bipolar Transistor (“IGBT”) driver, the IGBT driver may include two Metal-Oxide-Semiconductor Field-Effect Transistor (“MOSFET”) elements, two direct voltage terminals for providing a base direct voltage for the two MOSFET elements, two gate terminals for providing two control voltages for the two MOSFET elements, a measurement output for outputting an output voltage, and an alternating voltage source for providing an alternating voltage, the method may include providing the control voltages, the base direct voltage, and the alternating voltage, superimposing the alternating voltage with the base direct voltage, capturing the output voltage at the measurement output of the IGBT driver, and determining the temperature of the respective MOSFET elements from the captured output voltage.

The present disclosure relates to a compact temperature sensor displaying a temperature-resistance relationship. The temperature sensor comprises cross-coupled CMOS technology exhibits negative resistance, resulting in resistance-sensitive temperature sensing and amplification. The temperature sensor can be tuned to operate across a wide range of temperatures via modulation of a biasing current. The present disclosure further relates to subthreshold operation of CMOS technology.

A thermal sensor for an integrated circuit including: a Proportional To Absolute Temperature (PTAT) circuit comprising n-type MOS transistors and providing a first voltage; and a voltage generator circuit comprising a p-type MOS transistor and providing a second voltage. A reference voltage is based on the first voltage and the second voltage. At least one thermal output signal is based on the reference voltage together with the first voltage and/or the second voltage. In another aspect, an integrated circuit has a power routing arrangement, providing a power supply core voltage (VDDcore) to operate functional circuitry on the integrated circuit. One or more local thermal sensors are located on the integrated circuit, each comprising a PTAT circuit having MOS transistors using the power supply core voltage to generate a temperature-dependent voltage that varies independently of power supply core voltage variation.

A temperature sensing circuit includes a current generation circuit generating an initial current proportional to absolute temperature (Iptat), and a voltage generation circuit configured to mirror Iptat using an adjustable current source to produce a scaled current and to source the scaled current to a first terminal of a resistor to produce a reference voltage at the first terminal. A second terminal of the resistor has a voltage complementary to absolute temperature (Vctat) applied thereto. An analog-to-digital converter (ADC) has a reference input receiving the reference voltage, and a data input receiving Vctat or an externally sourced voltage. The ADC generates an output code indicative of a ratio between: a) either Vctat or the externally sourced voltage, and b) the reference voltage. A digital circuit determines a temperature readout from the output code and calibrates the reference voltage and the temperature readout determination based upon the output code.