A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

In one aspect, the present invention relates to a thermocouple device comprising a flexible non-planar substrate, a first printed thermocouple element comprising a first metal containing ink composition applied to the flexible non-planar substrate, and a second printed thermocouple element in electrical contact with the first printed thermocouple element making a thermocouple junction. The second printed thermocouple element comprises a second metal containing ink composition with a Seebeck coefficient sufficiently different from the first metal containing ink composition for the first and second printed thermocouple elements to together produce a thermocouple effect. The present application further relates to medical devices comprising the thermocouple and methods of making such devices.

A package comprises a photonic integrated circuit (PIC) with a modulator having a first modulator input, and a PIC interconnect region within two millimeters or fifty microns from the modulator. Additionally, an electric integrated circuit (EIC) is included with a driver circuit and an EIC interconnect region within two millimeters or fifty microns from the driver circuit. The driver circuit is electrically connected to the first modulator input via the EIC interconnect region, a first metal interconnect, and the PIC interconnect region. The modulator receives a temperature-dependent bias voltage, where the temperature dependence of the bias voltage inversely matches the temperature dependence of the modulator across an extended temperature range.

An infrared thermopile sensor includes a silicon cover having an infrared lens, an infrared sensing chip having duo-thermopile sensing elements, and a microcontroller chip calculating a temperature of an object. The components are in a stacked 3D package to decrease the size of the infrared thermopile sensor. The infrared sensing chip and the microcontroller chip have metal layers to shield the thermal radiation. The conversion from wrist temperature to body core temperature uses detected ambient temperature and fixed humidity or imported humidity level to calculate the body core temperature based on experimental data and curve fitting. The skin temperature compensation can be set differently for different sex gender, different standard deviation of wrist temperature and external relative humidity reading.

A controller for a power converter includes an output terminal operative to output a modulation signal for controlling a phase current of the power converter. A modulator is operative to generate the modulation signal such that an output voltage of the power converter follows a first portion of a load-line when load current is above a first threshold, the first portion of the load-line having a first slope that determines a rate of change of the output voltage as a function of the load current. An interface is operative to receive a temperature signal. Circuitry is operative to change the first threshold in response to receipt of the temperature signal.

While a wafer having a front surface to which a thermocouple is attached is heated, a temperature of the front surface of the wafer is measured with the thermocouple and a temperature of a back surface thereof is measured with a back surface side radiation thermometer. Emissivity set to the back surface side radiation thermometer is corrected based on the temperature of the wafer measured with the thermocouple. Next, while the semiconductor wafer with a pattern on the front surface is heated, the temperature of the back surface and the temperature of the front surface of the semiconductor wafer are measured with the back surface side radiation thermometer and the front surface side radiation thermometer, respectively. Emissivity set to the front surface side radiation thermometer is corrected based on the temperature of the semiconductor wafer measured with the back surface side radiation thermometer.

A thermocouple is provided that can measure a temperature of a material in a high temperature range of 1500° C. or higher with high accuracy at low cost. The thermocouple includes a first conductive member and a second conductive member. The first conductive member and the second conductive member are connected to each other to form a temperature sensing junction. The first conductive member contains a first conductive ceramic containing zirconium diboride and/or titanium diboride silicon carbide, a sintering agent, and unavoidable impurities. In the first conductive ceramic, the content of the silicon carbide is 5 mass % or more and 40 mass % or less. The second conductive member contains a second conductive ceramic containing boron carbide as a main constituent material.

A semiconductor device is provided. The semiconductor device includes a substrate. The semiconductor device also includes a semiconductor layer disposed in the substrate. The semiconductor device further includes a first dielectric layer disposed on the semiconductor layer. The semiconductor device includes a second dielectric layer disposed on the first dielectric layer. The semiconductor device also includes a pair of thermopiles disposed on the second dielectric layer. The first dielectric layer and the second dielectric layer form a chamber.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.