A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

Various embodiments include an electronic circuit for driving a thermocouple element comprising: contact electrodes for connecting cold-end electrodes of the thermocouple element; and a measurement circuit to measure a thermo-voltage generated by the thermocouple element. One of the electrodes is connected to a supply voltage and a ground potential over a voltage divider having resistors with pre-defined resistance values such that a common mode voltage between the contact electrode and the ground potential is in a pre-defined range. If a leakage resistance effective between the contact electrode and the ground potential is greater than a pre-defined threshold, a processor compares the common mode voltage to the pre-defined range and generates a calibration value for the measurement circuitry if the common mode voltage is outside the range.

Various embodiments include an electronic circuit for driving a thermocouple element comprising: contact electrodes for connecting cold-end electrodes of the thermocouple element; and a measurement circuit to measure a thermo-voltage generated by the thermocouple element. One of the electrodes is connected to a supply voltage and a ground potential over a voltage divider having resistors with pre-defined resistance values such that a common mode voltage between the contact electrode and the ground potential is in a pre-defined range. If a leakage resistance effective between the contact electrode and the ground potential is greater than a pre-defined threshold, a processor compares the common mode voltage to the pre-defined range and generates a calibration value for the measurement circuitry if the common mode voltage is outside the range.

A thermocouple ribbon features a pair of flat conductors and first and second layers of a polyimide film covering the conductors. The polyimide film preferably is coated with a fluoropolymer, such as fluorinated ethylene propylene (FEP). During manufacture of the thermocouple ribbon, the first and second layers of polyimide film, with the pair of flat conductors positioned there between, are heated above the melting temperature of the FEP. The completed thermocouple ribbon is then cooled. A thermocouple connector may then be attached to a first end of the thermocouple ribbon, while a welded thermocouple junction may be formed at a second end of the thermocouple ribbon.

A thermocouple ribbon features a pair of flat conductors and first and second layers of a polyimide film covering the conductors. The polyimide film preferably is coated with a fluoropolymer, such as fluorinated ethylene propylene (FEP). During manufacture of the thermocouple ribbon, the first and second layers of polyimide film, with the pair of flat conductors positioned there between, are heated above the melting temperature of the FEP. The completed thermocouple ribbon is then cooled. A thermocouple connector may then be attached to a first end of the thermocouple ribbon, while a welded thermocouple junction may be formed at a second end of the thermocouple ribbon.

A thermocouple assembly may feature a plurality of temperature sensors formed by thermocouple junctions. The sensors may be disposed within an inner diameter of the tubular element and sealed within the tubular element by thermally conductive material. An air gap may be defined by the thermally conductive material and the interior diameter of the tubular element between each pair of adjacent temperature sensors to improve thermal isolation.

A thermocouple assembly may feature a plurality of temperature sensors formed by thermocouple junctions. The sensors may be disposed within an inner diameter of the tubular element and sealed within the tubular element by thermally conductive material. An air gap may be defined by the thermally conductive material and the interior diameter of the tubular element between each pair of adjacent temperature sensors to improve thermal isolation.

A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.