This invention discloses a chip wiring layer temperature sensing circuit, a temperature sensing method, a chip stereo temperature sensor, and a chip thereof. The chip wiring layer temperature sensing circuit includes a metal wiring layer temperature detection module, a pulse delay detection module, and a temperature transition module; wherein the metal wiring layer temperature detection module is disposed at a metal interconnection structure of a metal wiring layer of a chip; and the metal interconnection structure is electrically connected to the pulse delay detection module; wherein the pulse delay detection module includes a system high-speed clock, a delay data generated after a pulse passing through the metal wiring layer temperature detection module detected by the system high-speed clock, and the delay data was sent to the temperature transition module; wherein the temperature transition module calculates a temperature of the metal wiring layer according to the delay data.

This invention discloses a chip wiring layer temperature sensing circuit, a temperature sensing method, a chip stereo temperature sensor, and a chip thereof. The chip wiring layer temperature sensing circuit includes a metal wiring layer temperature detection module, a pulse delay detection module, and a temperature transition module; wherein the metal wiring layer temperature detection module is disposed at a metal interconnection structure of a metal wiring layer of a chip; and the metal interconnection structure is electrically connected to the pulse delay detection module; wherein the pulse delay detection module includes a system high-speed clock, a delay data generated after a pulse passing through the metal wiring layer temperature detection module detected by the system high-speed clock, and the delay data was sent to the temperature transition module; wherein the temperature transition module calculates a temperature of the metal wiring layer according to the delay data.

A temperature sensing circuit a switched capacitor circuit selectively samples Vbe and Vbe voltages and provides the sampled voltages to inputs of an integrator. A quantization circuit quantizes outputs of the integrator to produce a bitstream. When a most recent bit of the bitstream is a logic zero, operation includes sampling and integration of Vbe a first given number of times to produce a voltage proportional to absolute temperature. When the most recent bit of the bitstream is a logic one, operation includes cause sampling and integration of Vbe a second given number of times to produce a voltage complementary to absolute temperature. A low pass filter and decimator filters and decimates the bitstream produced by the quantization circuit to produce a signal indicative of a temperature of a chip into which the temperature sensing circuit is placed.

A temperature sensing circuit a switched capacitor circuit selectively samples Vbe and Vbe voltages and provides the sampled voltages to inputs of an integrator. A quantization circuit quantizes outputs of the integrator to produce a bitstream. When a most recent bit of the bitstream is a logic zero, operation includes sampling and integration of Vbe a first given number of times to produce a voltage proportional to absolute temperature. When the most recent bit of the bitstream is a logic one, operation includes cause sampling and integration of Vbe a second given number of times to produce a voltage complementary to absolute temperature. A low pass filter and decimator filters and decimates the bitstream produced by the quantization circuit to produce a signal indicative of a temperature of a chip into which the temperature sensing circuit is placed.

A disclosed linearization circuit includes a reference component, a charging and discharging controller, and a comparator circuit. The reference component has a non-linear dependence on current or voltage. The charging and discharging controller is configured to control alternating charging and discharging of the reference component. A voltage associated with the reference component forms a reference signal. The charging and discharging are controlled such that the reference signal has a periodic time dependence. The reference signal and a measurement signal are received by the comparator circuit. The comparator circuit is configured to generate and output a square-wave signal based on a reference time point during a charge-discharge cycle, and based on a result of a comparison of the reference signal with the measurement signal, such that the square-wave signal represents a linearized output signal. This disclosure further relates to a corresponding method.

A disclosed linearization circuit includes a reference component, a charging and discharging controller, and a comparator circuit. The reference component has a non-linear dependence on current or voltage. The charging and discharging controller is configured to control alternating charging and discharging of the reference component. A voltage associated with the reference component forms a reference signal. The charging and discharging are controlled such that the reference signal has a periodic time dependence. The reference signal and a measurement signal are received by the comparator circuit. The comparator circuit is configured to generate and output a square-wave signal based on a reference time point during a charge-discharge cycle, and based on a result of a comparison of the reference signal with the measurement signal, such that the square-wave signal represents a linearized output signal. This disclosure further relates to a corresponding method.

A first thermoelectric component (TEC) includes a top surface and a bottom surface. The first TEC is configured to concurrently increase temperature of the top surface and decrease temperature of the bottom surface or vice versa to transfer thermal energy between the top surface and the bottom surface based on a voltage potential applied to the first TEC. A thermal transfer component includes a top surface and a bottom surface. The bottom surface of the thermal transfer component is coupled to the top surface of the first TEC. The thermal transfer component is tapered such that the bottom surface is smaller than the top surface. A second TEC includes a top surface and a bottom surface. The bottom surface of the second TEC is coupled to the top surface of the thermal transfer component. The second TEC is larger than the first TEC.

A first thermoelectric component (TEC) includes a top surface and a bottom surface. The first TEC is configured to concurrently increase temperature of the top surface and decrease temperature of the bottom surface or vice versa to transfer thermal energy between the top surface and the bottom surface based on a voltage potential applied to the first TEC. A thermal transfer component includes a top surface and a bottom surface. The bottom surface of the thermal transfer component is coupled to the top surface of the first TEC. The thermal transfer component is tapered such that the bottom surface is smaller than the top surface. A second TEC includes a top surface and a bottom surface. The bottom surface of the second TEC is coupled to the top surface of the thermal transfer component. The second TEC is larger than the first TEC.

The present invention relates to a Pt vs. RhPt thermocouple (such as a Type R or Type S thermocouple), and to the modification of the electrical properties of the same, while in service. More especially there is provided a method for reducing the drift of a Pt vs. RhPt thermocouple while the thermocouple is in use in an oxidising environment, wherein the Pt limb of the thermocouple is doped platinum comprising an effective amount of one or more dopants selected from the group consisting of yttrium, zirconium and samarium.

The present invention relates to a Pt vs. RhPt thermocouple (such as a Type R or Type S thermocouple), and to the modification of the electrical properties of the same, while in service. More especially there is provided a method for reducing the drift of a Pt vs. RhPt thermocouple while the thermocouple is in use in an oxidising environment, wherein the Pt limb of the thermocouple is doped platinum comprising an effective amount of one or more dopants selected from the group consisting of yttrium, zirconium and samarium.