Patent classifications
G01K11/125
Two-color high speed thermal imaging system for laser-based additive manufacturing process monitoring
Monitoring melt pool temperature in laser powder bed fusion by providing a build laser that produces a laser beam that is directed onto the melt pool and produces an incandescence that emanates from the melt pool, receiving the incandescence and producing a first image having a first spectral band and a second image having a second spectral band, and determining the ratio of said first image having a first spectral band and said second image having a second spectral band to monitor the melt pool temperature.
APPARATUS FOR PROCESSING SUBSTRATE AND METHOD FOR MEASURING TEMPERATURE OF SUBSTRATE
Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.
TEMPERATURE MEASUREMENT METHOD, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE
A temperature measurement method according to one embodiment includes a step of applying measurement light having a predetermined wavelength to a reflective film formed on a first surface of a substrate. Furthermore, the temperature measurement method includes a step of receiving, with an optical member, reflected light generated by the measurement light being reflected by the reflective film. Furthermore, the temperature measurement method includes a step of calculating the temperature of the substrate based on a reflectance based on the ratio between the intensity of the measurement light and the intensity of the reflected light.
TEMPERATURE MEASUREMENT METHOD, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE
A temperature measurement method according to one embodiment includes a step of applying measurement light having a predetermined wavelength to a reflective film formed on a first surface of a substrate. Furthermore, the temperature measurement method includes a step of receiving, with an optical member, reflected light generated by the measurement light being reflected by the reflective film. Furthermore, the temperature measurement method includes a step of calculating the temperature of the substrate based on a reflectance based on the ratio between the intensity of the measurement light and the intensity of the reflected light.
Method and apparatus for measuring temperature
Apparatuses and methods for measuring substrate temperature are provided. In one or more embodiments, an apparatus for estimating a temperature is provided and includes a plurality of electromagnetic radiation sources positioned to emit electromagnetic radiation toward a reflection plane, and a plurality of electromagnetic radiation detectors. Each electromagnetic radiation detector is positioned to sample the electromagnetic radiation emitted by a corresponding electromagnetic radiation source of the plurality of electromagnetic radiation sources. The apparatus also includes a pyrometer positioned to receive electromagnetic radiation emitted by plurality of electromagnetic radiation sources and reflected from a substrate disposed at a reflection plane and electromagnetic radiation emitted by the substrate. The apparatus includes a processor configured to estimate a temperature of the substrate based on the electromagnetic radiation emitted by the substrate. Methods of estimating temperature are also provided.
Apparatus for processing substrate and method for measuring temperature of substrate
Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.
Temperature Measurement Device
A temperature measuring device includes a Fabry-Perot interferometer, a power supply, and a light source. The temperature measuring device observes the light emitted from the light source and transmitted through the Fabry-Perot interferometer and obtains the temperature of a measurement environment in which the Fabry-Perot interferometer is placed. The light source emits a plurality of lights to the Fabry-Perot interferometer.
Method and system for inspecting processing apparatus
A system configured to inspect a processing apparatus includes a temperature adjusting device configured to adjust a temperature of a component within a processing chamber of the processing apparatus; a light source configured to emit measurement light; multiple optical elements configured to output the measurement light emitted from the light source to the component within the processing chamber of the processing apparatus as output light and configured to receive reflected light from the component during a temperature adjustment of the component by the temperature adjusting device; and a controller configured to measure temperatures of the component at measurement points respectively corresponding to the multiple optical elements based on the reflected light, and make a determination upon abnormality of the processing apparatus based on comparisons of the temperatures of the component at the respective measurement points.
Method and system for inspecting processing apparatus
A system configured to inspect a processing apparatus includes a temperature adjusting device configured to adjust a temperature of a component within a processing chamber of the processing apparatus; a light source configured to emit measurement light; multiple optical elements configured to output the measurement light emitted from the light source to the component within the processing chamber of the processing apparatus as output light and configured to receive reflected light from the component during a temperature adjustment of the component by the temperature adjusting device; and a controller configured to measure temperatures of the component at measurement points respectively corresponding to the multiple optical elements based on the reflected light, and make a determination upon abnormality of the processing apparatus based on comparisons of the temperatures of the component at the respective measurement points.
GLASS-CERAMIC THERMAL PAINT SYSTEM AND METHOD USING UV:VIS SPECTROSCOPY
Temperature measurements are critical in gas turbine engine design but difficult to obtain due to the extreme environment. Temperature indicating paints (thermal paints) have been used for decades to map maximum temperature fields on superalloy components but have numerous weaknesses. Disclosed herein are novel glass ceramic thermal paints that undergo viscous flow sintering to indicate temperatures up to 1000° C., with high resolution (±5° C.), by an optical transition. Disclosed paint formulations are designed to adhere to Nickel-based superalloys or SiC—SiC ceramic matrix composites (CMC) by closely matching coefficients of thermal expansion and may function for times above 60 hours. By utilizing automation and a UV:VIS spectrometer, quantitative temperature maps can be generated for easy comparison to theoretical models. A transient sintering energy model is disclosed to recover full thermal history information.