A semiconductor pressure sensor includes: a first silicon substrate including a first recessed part; and a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space. In cross-section, a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and are provided in one of or each of a first end side and a second end side of the first space.

A MEMS sensor includes a silicon substrate that has a first surface and a second surface on a side opposite to the first surface and that has a cavity in the first surface, a silicon diaphragm that has a first surface and a second surface on aside opposite to the first surface and in which the second surface is joined directly to the first surface of the silicon substrate, and a piezoresistance formed at the first surface of the silicon diaphragm, and, in the MEMS sensor, a plane orientation of the first surface of the silicon substrate and a plane orientation of the first surface of the silicon diaphragm differ from each other.

Measures are described with the aid of which not only a rupture, but also cracks may be detected in the diaphragm structure of a micromechanical component with the aid of circuit means integrated into the diaphragm structure. At least some circuit elements are integrated for this purpose into the bottom side of the diaphragm, i.e., into a diaphragm area directly adjoining the cavern below the diaphragm.

A method of manufacturing a pressure sensor comprises: above a film portion formed on one surface of a substrate, depositing a first magnetic layer, a second magnetic layer and an intermediate layer between the first and second magnetic layers on one surface of a substrate; removing the deposited layers leaving a part thereof; and removing a part of the substrate from another surface of the substrate. By removing the deposited layers leaving a part thereof, a strain detecting element is formed in a part of a first region, the strain detecting element comprising the first magnetic layer, the second magnetic layer and the intermediate layer. By removing a part of the substrate, a part of the first region of the substrate is removed. In addition, the deposition of the first magnetic layer is performed with the substrate being bended.

The present disclosure relates to differential pressure transducers. The teachings thereof may be embodied in diaphragm-beam configurations for measuring small values of differential pressure and/or a bridge circuit for converting mechanical strains into an electric output signal. For example, a diaphragm-beam structure for measuring differential pressure may include: a frame; a paddle; a resilient beam member; a diaphragm; and a gap defined between the paddle and the frame. The diaphragm flexes under pressure on one surface. The resilient beam member anchors the paddle to the frame. The second surface of the diaphragm is mounted to the first surface of the paddle and the frame to bridge the gap. The paddle moves due to flexure of the diaphragm. The resilient beam member bends due to movement of the paddle. The thickness of the diaphragm is less than 50 micrometers.

A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.

The disclosed invention is a MEMS environmental sensor and preparation method thereof. A transfer cavity is produced in the middle of a transfer substrate of a MEMS environmental sensor, and a transfer medium is located inside the transfer cavity. The surface area of an input port is larger than the surface area of an output port. An elastic transfer membrane is provided on the surface of the input port, and an elastic pressure membrane is provided on the surface of the output port. A load bearing cavity is provided in a load bearing substrate, a magnetic sensing element is positioned inside the load bearing cavity, and the load bearing cavity partially overlaps with the output port. The surface area of the input port of the transfer cavity is larger than the surface area of the output port, and on the basis of Pascal's principle, differences in the volume of the transmission cavity are used to transform a small displacement in a region of large volume into a large displacement in a region of small volume. In addition, because the output port and the end of the output port at least partially overlap, and a magnetic sensing element is arranged in the load bearing cavity, a change in displacement is produced, producing a change in a magnetic field, that is converted into a change in electrical resistance, which provides high-sensitivity and low-power detection.

In a microelectromechanical system (MEMS) pressure sensor, thin and fragile bond wires that are used in the prior art to connect a MEMS pressure sensing element to an application specific integrated circuit (ASIC) for the input and output signals between these two chips are replaced by stacking the ASIC on the MEMS pressure sensing element and connecting each other using conductive vias formed in the ASIC. Gel used to protect the bond wires, ASIC and MEMS pressure sensing element can be eliminated if bond wires are no longer used. Stacking the ASIC on the MEMS pressure sensing element and connecting them using conductive vias enables a reduction in the size and cost of a housing in which the devices are placed and protected.

Electrical and mechanical noise in a microelectromechanical system (MEMS) pressure sensor are reduced by the symmetrical distribution of bond pads, conductive vias and interconnects and by the elimination of bond wires used in the prior art to connect a MEMS pressure sensing element to an application specific integrated circuit (ASIC). The bond wires are eliminated by using conductive vias to connect an ASIC to a MEMS pressure sensing element. Extraneous electrical noise is suppressed by conductive rings that surround output signal bond pads and a conductive loop that surrounds the conductive rings and bond pads. The conductive rings and loop are connected to a fixed voltage or ground potential.

A process fluid pressure measurement probe includes a pressure sensor formed of a single-crystal material and mounted to a first metallic process fluid barrier and disposed for direct contact with a process fluid. The pressure sensor has an electrical characteristic that varies with process fluid pressure. A feedthrough is formed of a single-crystal material and has a plurality of conductors extending from a first end to a second end. The feedthrough is mounted to a second metallic process fluid barrier and is spaced from, but electrically coupled to, the pressure sensor. The pressure sensor and the feedthrough are mounted such that the secondary metallic process fluid barrier is isolated from process fluid by the first metallic process fluid barrier.