A pressure sensor device for a pressure sensor, in particular a capacitive pressure sensor, having a pressure chamber bounded by a movable sensing membrane and a stationary counterelectrode of the pressure sensor device. The sensing membrane and the counterelectrode each run in the longitudinal direction and the transverse direction of the pressure sensor device. The sensing membrane is directly or indirectly spring-mounted, in particular spring-mounted in two-dimensional fashion, in the pressure chamber relative to the counterelectrode by at least one micromechanical spring element, in particular a plurality of micromechanical spring elements.

A pressure sensor system having at least one pressure sensor device. The pressure sensor device has a stack having a ceramic substrate, at least one signal processing element, and at least one sensor element. The pressure sensor device is placed in a sensor housing provided with a membrane, and a residual volume of the sensor housing provided with the membrane is filled with an incompressible fluid. A method for producing such a pressure sensor system, and to a measuring device, are also described.

A pressure sensor includes a diaphragm on a silicon substrate and a plurality of piezoelectric element areas that change in resistance according the distortion of the diaphragm. The plurality of piezoelectric element areas of the pressure sensor include a first piezoelectric element area, a second piezoelectric element area, a third piezoelectric element area, and a fourth piezoelectric element area. The diaphragm has a maximum deflection area whose stress becomes 80% or more of a maximum stress when distorted by a predetermined pressure. The first piezoelectric element area, the second piezoelectric element area, the third piezoelectric element area, and the fourth piezoelectric element area are disposed in the maximum deflection area.

A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber.

Pressure sensor assemblies comprise a sensor body having a sensing membrane and wherein a fluid is placed in communication with the membrane to determine a fluid pressure. A support is connected with the body and includes an opening for receiving the fluid from an external source, wherein the opening is in fluid-flow communication with the membrane. The pressure sensor comprises one or more elements disposed therein configured to mitigate transmission of a fluid pressure spike to the sensing membrane. The body or the support may have a pressure mitigating element, e.g., an internal channel, for receiving the fluid from the opening and transferring it to the membrane, wherein the channel may itself be configured to provide the desired protection against fluid pressure spikes, or may be connected with another internal element to provide such protection.

To provide a pressure sensor element and a pressure sensor that have stable pressure sensitivity without the need for improving the accuracy of alignment between a diaphragm and a holding member, a pressure sensor element includes a thin plate diaphragm, a holding member that holds the diaphragm, and one or more strain resistance gauges that are provided on a first surface of the diaphragm and which change in resistance values according to deformation of the diaphragm, in which the holding member has recesses that, formed on an annular first end surface facing the first surface of the diaphragm, cut out parts of an inner circumference of the first end surface, and the strain resistance gauges are disposed near the regions corresponding to the recesses on the first surface of the diaphragm.

The invention discloses a MEMS pressure sensor, which includes a bulk silicon layer, a buried oxygen layer, a substrate, a varistor, a first passivation layer, an electrode layer, and a second passivation layer. The varistor is located on the upper surface of the buried oxygen layer, and the first passivation layer is a rectangular shell located on the upper surface of the buried oxygen layer; there is a through hole in the center of the top of the rectangular shell; the first passivation layer covers the varistor, and the gap between the first passivation layer and the varistor forms an isolation cavity. The electrode layer is located on the upper surface of the first passivation layer and is connected with the varistor via the through hole. The second passivation layer is located on the upper surface of the electrode layer.

A semiconductor device includes a base, a detector on the base and including a first surface on which a detection portion is provided, and a resin package on the base and including an exposure hole to externally expose the detection portion of the detector. At least a portion of an outer peripheral edge of the first surface of the detector is exposed in the exposure hole. The resin package includes a depressed portion along the portion of the outer peripheral edge that is exposed in the exposure hole.

A pressure sensor and a packaging method thereof. The pressure sensor comprises: a sensitive chip, which comprises a thin-wall part and a supporting part connected to the periphery of the thin-wall part, the supporting part being provided with an electrode; a sealing element, which is fitted over the sensitive chip and partially surrounds together with the sensitive chip to form a sealing cavity, the sealing element being provided with a through hole corresponding to the electrode; a conductive component, which is provided in the through hole in a sealed mode and electrically connected to the electrode, the conductive component and the sealing element being arranged in an insulating mode, and the conductive component comprising a filling part and a leading-out part embedded in the filling part.

A pressure pulse wave sensor includes: a sensor chip including: a pressure-sensitive element row configured by a plurality of pressure-sensitive elements arranged in one direction; and a chip-side terminal portion placed in an end portion in the one direction of a pressure-sensitive surface on which the pressure-sensitive element row is formed, and electrically connected to the pressure-sensitive element row; and a substrate including a concave portion, the sensor chip fixed to a bottom surface of the concave portion, a substrate-side terminal portion for being electrically connected to the chip-side terminal portion is disposed on a surface of the substrate in which the concave portion is formed, and the pressure pulse wave sensor further includes: an electroconductive member connecting the chip-side terminal portion and the substrate-side terminal portion to each other; and a protective member covering the electroconductive member.