A method of evaluating a defect area on a wafer, the method including preparing a mirror-polished wafer, heat-treating the wafer, cleaning the wafer to remove an oxide film formed during the heat-treating, polishing the wafer, and evaluating a defect on a surface of the wafer, is disclosed.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

The invention discloses a method for obtaining the geometrical and mechanical parameters of rock samples and a holographic scanning system thereof, wherein the system includes an observation mechanism, a multi-scale penetration mechanism, a grinding mechanism, a rock sample installation mechanism arranged on a three-axis precision motion platform, and an industrial computer controlling the operation mode of each mechanism of the platform Indentation/rotary penetration test, pulse echo signal acquisition, three-dimensional surface topography reconstruction, layer by layer grinding and repeated experiments are carried out. The geometric parameters and corresponding mechanical field parameters are obtained by spatial interpolation of the three-dimensional parameter lattice accumulated by several layers of single-layer rock parameters. The holographic scanning system and method can obtain the real spatial distribution of various media in rock samples. Combined with high performance numerical calculation method, it provides a more scientific method for the analysis of rock mechanical properties, failure and instability.

The invention discloses a method for obtaining the geometrical and mechanical parameters of rock samples and a holographic scanning system thereof, wherein the system includes an observation mechanism, a multi-scale penetration mechanism, a grinding mechanism, a rock sample installation mechanism arranged on a three-axis precision motion platform, and an industrial computer controlling the operation mode of each mechanism of the platform Indentation/rotary penetration test, pulse echo signal acquisition, three-dimensional surface topography reconstruction, layer by layer grinding and repeated experiments are carried out. The geometric parameters and corresponding mechanical field parameters are obtained by spatial interpolation of the three-dimensional parameter lattice accumulated by several layers of single-layer rock parameters. The holographic scanning system and method can obtain the real spatial distribution of various media in rock samples. Combined with high performance numerical calculation method, it provides a more scientific method for the analysis of rock mechanical properties, failure and instability.

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

An analysis device of an embodiment is an analysis device of an active material layer of an electrode of a secondary battery, and includes a processor configured to execute a program to acquire image data that represents active materials in the active material layer processed by ion milling and voids or fillings between the active materials by a difference in brightness, and compare patterns of the difference in brightness between the image data in at least two different states of the active material layer.

An analysis device of an embodiment is an analysis device of an active material layer of an electrode of a secondary battery, and includes a processor configured to execute a program to acquire image data that represents active materials in the active material layer processed by ion milling and voids or fillings between the active materials by a difference in brightness, and compare patterns of the difference in brightness between the image data in at least two different states of the active material layer.

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

A photographing condition determining method includes: photographing a part of a metal structure of a metal material subjected to predetermined sample preparation under a predetermined photographing condition; assigning, to pixels corresponding to one or a plurality of predetermined phases of the metal structure, labels of respective phases for a photographed image; calculating one or more feature values for a pixel to which a label of one of the assigned phases; classifying the phases of the metal structure of the image by inputting a calculated feature value to a model, which has been learned in advance using feature values assigned with labels of respective phases as input and labels of the respective phases as output, and acquiring a label of a phase of a pixel corresponding to the input feature value; and determining a photographing condition when other parts of the metal structure are photographed based on a classification result.

A photographing condition determining method includes: photographing a part of a metal structure of a metal material subjected to predetermined sample preparation under a predetermined photographing condition; assigning, to pixels corresponding to one or a plurality of predetermined phases of the metal structure, labels of respective phases for a photographed image; calculating one or more feature values for a pixel to which a label of one of the assigned phases; classifying the phases of the metal structure of the image by inputting a calculated feature value to a model, which has been learned in advance using feature values assigned with labels of respective phases as input and labels of the respective phases as output, and acquiring a label of a phase of a pixel corresponding to the input feature value; and determining a photographing condition when other parts of the metal structure are photographed based on a classification result.