Provided is a die extraction method, comprising the following steps: removing solder balls; polishing a front side of the sample to remove a part on a front side of the target die, and retain a part of a die attach film (DAF) layer on the front side of the target die and a bonding wire located in the part; attaching the front side of the sample to the polishing jig and flattening the sample and the polishing jig by the flattener; polishing the back side of the sample to remove a part on a back side of the target die, and retain a DAF layer on the back side of the target die; removing the DAF and a packaging material remaining on the sample to obtain the target die; and attaching the back side of the target die to a glass slide, thus completing extraction of the target die.

Provided is a die extraction method, comprising the following steps: removing solder balls; polishing a front side of the sample to remove a part on a front side of the target die, and retain a part of a die attach film (DAF) layer on the front side of the target die and a bonding wire located in the part; attaching the front side of the sample to the polishing jig and flattening the sample and the polishing jig by the flattener; polishing the back side of the sample to remove a part on a back side of the target die, and retain a DAF layer on the back side of the target die; removing the DAF and a packaging material remaining on the sample to obtain the target die; and attaching the back side of the target die to a glass slide, thus completing extraction of the target die.

Apparatus and methods are described for the automated transfer and storage of transmission electron microscope (TEM) and scanning/transmission electron microscope (STEM) lamella samples throughout a semiconductor manufacturing facility using existing automation infrastructure such as a Front Opening Unified Pod (FOUP). Also provided are wafer facsimiles corresponding to outer dimensions of semiconductor, data storage or solar cell wafers, wherein the facsimiles adapted to store, carry and/or provide a testing platform for testing of samples taken from semiconductor, data storage or solar cell wafers.

A quantitative statistical characterization method of micron-level second phase in aluminum alloy based on deep learning is disclosed. The method includes obtaining a feature database of the standard sample, training the feature database by the image segmentation network U-Net based on deep learning to obtain a U-Net segmentation model, selecting the corresponding parameters of the optimal precision and establishing a U-Net target model; clipping the aluminum alloy image to be detected and inputting the clipped images into the U-net target model, obtaining the size, area and position information of the second phase through the connected region algorithm, carrying out statistical distribution of the data set combined with the mathematical statistical method, and restoring the position information to the surface of the aluminum alloy to be tested to obtain the full-field quantitative statistical distribution and visualization results.

A quantitative statistical characterization method of micron-level second phase in aluminum alloy based on deep learning is disclosed. The method includes obtaining a feature database of the standard sample, training the feature database by the image segmentation network U-Net based on deep learning to obtain a U-Net segmentation model, selecting the corresponding parameters of the optimal precision and establishing a U-Net target model; clipping the aluminum alloy image to be detected and inputting the clipped images into the U-net target model, obtaining the size, area and position information of the second phase through the connected region algorithm, carrying out statistical distribution of the data set combined with the mathematical statistical method, and restoring the position information to the surface of the aluminum alloy to be tested to obtain the full-field quantitative statistical distribution and visualization results.

An observation and photography apparatus that has a polishing mechanism attached thereto. The polishing mechanism is provided with a turntable with a perpendicular rotation shaft, a polishing cloth for polishing the surface of a sample attached to the bottom surface of the turntable, and a polishing-fluid spraying nozzle disposed below the polishing cloth for spraying polishing fluid containing polishing material upward to we the polishing cloth.

An observation and photography apparatus that has a polishing mechanism attached thereto. The polishing mechanism is provided with a turntable with a perpendicular rotation shaft, a polishing cloth for polishing the surface of a sample attached to the bottom surface of the turntable, and a polishing-fluid spraying nozzle disposed below the polishing cloth for spraying polishing fluid containing polishing material upward to we the polishing cloth.

The present invention relates to a method and system for quantitatively evaluating surface roughness of an organic pore of kerogen in shale. The method includes: making a shale sample; applying a circle of silver-painted conductive tape on the edge of the shale sample to obtain a processed sample; conducting image scanning on the processed sample to obtain a scanned image; determining a kerogen area according to the scanned image; determining an organic pore area according to the kerogen area; carrying out gridding treatment on the organic pore area to obtain multiple grid cells; adopting double integral calculation on each of the grid cells to obtain the areas of the multiple grid cells; summing each of the areas to obtain the surface area of the organic pore; and evaluating surface roughness of the organic pore according to the surface area of the pore.

The present invention relates to a method and system for quantitatively evaluating surface roughness of an organic pore of kerogen in shale. The method includes: making a shale sample; applying a circle of silver-painted conductive tape on the edge of the shale sample to obtain a processed sample; conducting image scanning on the processed sample to obtain a scanned image; determining a kerogen area according to the scanned image; determining an organic pore area according to the kerogen area; carrying out gridding treatment on the organic pore area to obtain multiple grid cells; adopting double integral calculation on each of the grid cells to obtain the areas of the multiple grid cells; summing each of the areas to obtain the surface area of the organic pore; and evaluating surface roughness of the organic pore according to the surface area of the pore.

The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.