A sample (4) is created by cutting out a device on a plane (10-10). The device has a gate electrode (3) formed along a direction [2-1-10] on a plane c (0001) of a compound semiconductor (1) having a wurtzite structure. Edge dislocations having Burgers vectors of 1/3[2-1-10] and 1/3[−2110] and mixed dislocations having Burgers vectors of 1/3[2-1-13] and 1/3[−2113] are observed by making an electron beam (5) incident on the sample (4) from a direction [−1010] using a transmission electron microscope.

Diffraction patterns of a sample at various tilt angles are acquired by irradiating a region of interest using a first charged particle beam. Sample images are acquired by irradiating the region of interest using a second charged particle beam. The first and second charged particle beams are formed by splitting charged particles generated by a charged particle source.

A mass spectrometer (1) includes: an ionization section (201) configured to generate ions from a sample; a mass separation section (231, 235) configured to separate ions generated by the ionization section according to mass-to-charge ratio; an ion detector (237) configured to detect an ion separated by the mass separation section; an ion capture section (31) configured to capture ions separated by the mass separation section; and an electron beam detection section (32) configured to detect an electron beam diffracted by ions captured within the ion capture section (31). This mass spectrometer is capable of performing, in a single measurement operation, both a mass spectrometric analysis and an electron-beam diffraction measurement for distinguishing between isomers. The electron-beam diffraction measurement can be more efficiently performed than in a conventional device of this type.

A mass spectrometer (1) includes: an ionization section (201) configured to generate ions from a sample; a mass separation section (231, 235) configured to separate ions generated by the ionization section according to mass-to-charge ratio; an ion detector (237) configured to detect an ion separated by the mass separation section; an ion capture section (31) configured to capture ions separated by the mass separation section; and an electron beam detection section (32) configured to detect an electron beam diffracted by ions captured within the ion capture section (31). This mass spectrometer is capable of performing, in a single measurement operation, both a mass spectrometric analysis and an electron-beam diffraction measurement for distinguishing between isomers. The electron-beam diffraction measurement can be more efficiently performed than in a conventional device of this type.

A charged particle beam apparatus includes a movement mechanism, a particle source, an optical element, a detector, and a control mechanism configured to control, based on an observation condition, the movement mechanism, the particle source, the optical element, and the detector. The control mechanism is configured to acquire a diffraction pattern image including a plurality of Kikuchi lines as a comparison image after inclining the movement mechanism by a first angle, evaluate an error between an inclination angle of the sample and a target inclination angle using a reference image of a reference diffraction pattern and the comparison image, and control inclination of the movement mechanism based on an evaluation result.

Methods and systems for conducting tomographic imaging microscopy of a sample with a high energy charged particle beam include irradiating a first region of the sample in a first angular position with a high energy charged particle beam and detecting emissions resultant from the charged particle beam irradiating the first region. The sample is repositioned into a second angular position such that the second region to be different than the first region, and a second region of the sample is irradiated. Example repositioning may include one or more of a translation of the sample, a helical rotation of the sample, the sample being positioned in a non-eucentric position, or a combination thereof. Emissions resultant from irradiation of the second region are then detected, and a 3D model of a portion of the sample is generated based at least in part on the detected first emissions and detected second emissions.

Automatic alignment of the zone axis of a sample and a charged particle beam is achieved based on a diffraction pattern of the sample. An area corresponding to the Laue circle is segmented using a trained network. The sample is aligned with the charged particle beam by tilting the sample with a zone axis tilt determined based on the segmented area.

Automatic alignment of the zone axis of a sample and a charged particle beam is achieved based on a diffraction pattern of the sample. An area corresponding to the Laue circle is segmented using a trained network. The sample is aligned with the charged particle beam by tilting the sample with a zone axis tilt determined based on the segmented area.

A material identification system includes one or more data interfaces configured to receive first sensor data generated by a first sensor responsive to a material sample, and receive second sensor data generated by a second sensor responsive to the material sample. The material identification system also includes one or more processors configured to generate a set of predictions of an identification of the material sample and a corresponding set of certainty information.

A material identification system includes one or more data interfaces configured to receive first sensor data generated by a first sensor responsive to a material sample, and receive second sensor data generated by a second sensor responsive to the material sample. The material identification system also includes one or more processors configured to generate a set of predictions of an identification of the material sample and a corresponding set of certainty information.