Dynamic band contrast image (DBCI) is constructed with scattering patterns acquired at multiple scanning locations of a sample using a charged particle beam. Each pixel of the DBCI is generated by integrating the corresponding scattering pattern along a diffraction band. The DBCI includes charged particle channeling condition and can be used for detecting sample defects.

There is provided an ultrafast electron diffraction apparatus including: a photoelectron gun configured to emit an electron beam; a bending portion for emitting the electron beam emitted from the photoelectron gun by changing a travel direction of the electron beam by a predetermined angle; and a sample portion including a sample to be analyzed by the electron beam emitted from the bending portion. The electron beam reaches the sample portion in a state that a pulse of the electron beam is compressed and the timing jitter between the pumping light and probe electron pulse is completely reduced as the travel direction of the electron beam is changed by the predetermined angle through the bending portion.

Systems and methods are provided for serial, high-throughput acquisition of electron diffraction patterns from nanocrystals. Nanocrystals dispersed on a TEM grid are automatically identified from an overview image that is obtained, for example, using a dark field detector in scanning mode. Diffraction patterns are subsequently obtained from a plurality of crystals identified in the overview image by sequentially moving (e.g. scanning) the electron nanobeam relative to the crystals and collecting diffraction images using a fast electron camera. In some example embodiments, this sequence may be repeated for different tilt angles, where registration among overview images obtained at the different tilt angles is employed to position the electron nanobeam for the different tilt angles (e.g. before the sample stage is moved to interrogate a different sample region). The present methods may be automated, thereby facilitating unsupervised acquisition of arbitrarily large data sets.

Systems and methods are provided for serial, high-throughput acquisition of electron diffraction patterns from nanocrystals. Nanocrystals dispersed on a TEM grid are automatically identified from an overview image that is obtained, for example, using a dark field detector in scanning mode. Diffraction patterns are subsequently obtained from a plurality of crystals identified in the overview image by sequentially moving (e.g. scanning) the electron nanobeam relative to the crystals and collecting diffraction images using a fast electron camera. In some example embodiments, this sequence may be repeated for different tilt angles, where registration among overview images obtained at the different tilt angles is employed to position the electron nanobeam for the different tilt angles (e.g. before the sample stage is moved to interrogate a different sample region). The present methods may be automated, thereby facilitating unsupervised acquisition of arbitrarily large data sets.

A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

A device and system for ultrafast electron diffraction is disclosed. The electron diffraction device includes an electron source, anode, and magnetic lens. A laser probe pulse interacts with electrons from the electron source to generate an electron probe pulse that passes through the anode and diffracts from a sample yielding a diffraction pattern. Data is configured to be collected at one instance using the diffraction pattern to yield a first snapshot of diffractive information. Snapshots may be merged to produce an atomic stroboscopic motion image history of atomic lattice changes. The electron source may include a gas jet with photo-ionizable noble gas atoms to produce photoionized, spin-polarized electrons to form the electron probe pulse when the laser probe pulse impinges upon the electron source.

A device and system for ultrafast electron diffraction is disclosed. The electron diffraction device includes an electron source, anode, and magnetic lens. A laser probe pulse interacts with electrons from the electron source to generate an electron probe pulse that passes through the anode and diffracts from a sample yielding a diffraction pattern. Data is configured to be collected at one instance using the diffraction pattern to yield a first snapshot of diffractive information. Snapshots may be merged to produce an atomic stroboscopic motion image history of atomic lattice changes. The electron source may include a gas jet with photo-ionizable noble gas atoms to produce photoionized, spin-polarized electrons to form the electron probe pulse when the laser probe pulse impinges upon the electron source.

The present disclosure discloses an apparatus. The apparatus according to the present disclosure may include a communication interface, one or more memories, and one or more processors. The one or more processors may be configured to: control the thin-film deposition devices to execute the thin-film deposition process by accessing the memory and executing a recipe; obtain in-process thin-film state data of the thin film from the thin-film measurement result received via the communication interface during the thin-film deposition process; and derive post-process thin-film state data of the thin film from the process condition data, the sensing data, and the in-process thin-film state data using a first correlation model.

The present disclosure discloses an apparatus. The apparatus according to the present disclosure may include a communication interface, one or more memories, and one or more processors. The one or more processors may be configured to: control the thin-film deposition devices to execute the thin-film deposition process by accessing the memory and executing a recipe; obtain in-process thin-film state data of the thin film from the thin-film measurement result received via the communication interface during the thin-film deposition process; and derive post-process thin-film state data of the thin film from the process condition data, the sensing data, and the in-process thin-film state data using a first correlation model.