Patent classifications
G01N23/20058
METHOD AND SYSTEM FOR AUTOMATIC ZONE AXIS ALIGNMENT
Automatic alignment of the zone axis of a sample and a charged particle beam is achieved based on a diffraction pattern of the sample. An area corresponding to the Laue circle is segmented using a trained network. The sample is aligned with the charged particle beam by tilting the sample with a zone axis tilt determined based on the segmented area.
ULTRAFAST ELECTRON DIFFRACTION APPARATUS
There is provided an ultrafast electron diffraction apparatus including: a photoelectron gun configured to emit an electron beam; a bending portion for emitting the electron beam emitted from the photoelectron gun by changing a travel direction of the electron beam by a predetermined angle; and a sample portion including a sample to be analyzed by the electron beam emitted from the bending portion. The electron beam reaches the sample portion in a state that a pulse of the electron beam is compressed and the timing jitter between the pumping light and probe electron pulse is completely reduced as the travel direction of the electron beam is changed by the predetermined angle through the bending portion.
METHOD FOR IMPROVING TRANSMISSION KIKUCHI DIFFRACTION PATTERN
The present invention refers to a method for improving a Transmission Kikuchi Diffraction, TKD pattern, wherein the method comprises the steps of: Detecting a TKD pattern (20b) of a sample (12) in an electron microscope (60) comprising at least one active electron lens (61) focussing an electron beam (80) in z-direction on a sample (12) positioned in distance D below the electron lens (61), the detected TKD (20b) pattern comprising a plurality of image points x.sub.D, y.sub.D and mapping each of the detected image points x.sub.D, y.sub.D to an image point of an improved TKD pattern (20a) with the coordinates x.sub.0, y.sub.0 by using and inverting generalized terms of the form x.sub.D=γ*A+(1−γ)*B and y.sub.D=γ*C+(1−γ)*D wherein
Crystal structure analysis system and crystal structure analysis method
An electron diffraction apparatus measures an overall structure of a crystal of a specimen by electron diffraction. An NMR apparatus measures a local structure of the crystal by NMR measurement. An analysis apparatus combines the overall structure and the local structure to specify a structure of the crystal.
Crystal structure analysis system and crystal structure analysis method
An electron diffraction apparatus measures an overall structure of a crystal of a specimen by electron diffraction. An NMR apparatus measures a local structure of the crystal by NMR measurement. An analysis apparatus combines the overall structure and the local structure to specify a structure of the crystal.
Hyperdimensional scanning transmission electron microscopy and examinations and related systems, methods, and devices
A material identification system includes one or more data interfaces configured to receive first sensor data generated by a first sensor responsive to a material sample, and receive second sensor data generated by a second sensor responsive to the material sample. The material identification system also includes one or more processors configured to generate a set of predictions of an identification of the material sample and a corresponding set of certainty information.
Hyperdimensional scanning transmission electron microscopy and examinations and related systems, methods, and devices
A material identification system includes one or more data interfaces configured to receive first sensor data generated by a first sensor responsive to a material sample, and receive second sensor data generated by a second sensor responsive to the material sample. The material identification system also includes one or more processors configured to generate a set of predictions of an identification of the material sample and a corresponding set of certainty information.
CHARACTERISATION OF AMPORPHOUS CONTENT OF COMPLEX FORMULATIONS BASED ON NON-NEGATIVE MATRIX FACTORISATION
Chemical components in a mixture are analysed using scattering data representing the results of a diffraction experiment performed on the mixture. Using non-negative matrix factorisation or another optimisation technique, the scattering data is deconvolved into non-negative basis components that represent contributions to the scattering data from each chemical component and fitting coefficients are derived in respect of the basis components that represent the proportions of chemical components in the mixture.
ELECTRON MICROSCOPY ANALYSIS METHOD
The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.
ELECTRON MICROSCOPY ANALYSIS METHOD
The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.