A toner including a toner particle, wherein the toner particle includes a toner base particle containing a binder resin, and a shell on the surface of the toner base particle; the shell contains a metal compound and an organosilicon polymer; the shell has at least an exposed portion of the metal compound and an exposed portion of the organosilicon polymer, on the surface of the toner particle; and in an analysis of a cross section of the toner particle by TEM-EDX, Ha (nm) and Hb (nm) which are average distances from the interface of the toner base particle and the shell up to the toner particle surface at the exposed portion of the metal compound and at the exposed portion of the organosilicon polymer, respectively, on the toner particle surface, satisfy Expression (1) below:
Hb>Ha+20.0  (1).

Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.

The present specification discloses a multi-view X-ray inspection system having, in one of several embodiments, a three-view configuration with three X-ray sources. Each X-ray source rotates and is configured to emit a rotating X-ray pencil beam and at least two detector arrays, where each detector array has multiple non-pixellated detectors such that at least a portion of the non-pixellated detectors are oriented toward both the two X-ray sources.

A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

A method and a device for the detection of radioactive sources, based on the simultaneous use of two or more radiation detectors of different types and the composition of the data collected by the two or more radiation detectors.

A method and a device for the detection of radioactive sources, based on the simultaneous use of two or more radiation detectors of different types and the composition of the data collected by the two or more radiation detectors.

Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.

Embodiments of the present disclosure disclose a combined scanning X-ray generator, a composite inspection apparatus and an inspection method. The combined scanning X-ray generator includes: a housing; an anode arranged in the housing, the anode including a first end of the anode and a second end of the anode opposite the first end of the anode; a pencil beam radiation source arranged at the first end of the anode and configured to emit a pencil X-ray beam; and a fan beam radiation source arranged at the second end of the anode and configured to emit a fan X-ray beam; wherein the pencil beam radiation source and the fan beam radiation source are operated independently.

An observation apparatus and method that avoids drawbacks of a Lorentz method and observes a weak scatterer or a phase object with in-focus, high resolution, and no azimuth dependency, by a Foucault method observation using a hollow-cone illumination that orbits and illuminates an incident electron beam having a predetermined inclination angle, an electron wave is converged at a position (height) of an aperture plate downstream of a sample and a bright field condition in which a direct transmitted electron wave of the sample passes through the aperture plate, a dark field condition in which the transmitted electron wave is shielded and a Schlieren condition in which approximately half of the transmitted wave is shielded as a boundary condition of both of the above conditions are controlled, and a spatial resolution of the observation image is controlled by selecting multiple diameters and shapes of the opening of the aperture plate.

Disclosed herein is a backscatter X-ray system comprising: an X-ray source configured to scan a sheet of X-ray across an object, wherein the sheet of X-ray illuminates one line on a surface of the object; a sensor configured to differentiate backscattered X-ray from different spots along the line.