A method is carried out with the aid of a particle beam microscope which includes a particle beam column for producing a beam of charged particles, the particle beam column having an optical axis. Furthermore, the particle beam microscope includes a holding device for holding the extracted micro-sample. The method includes holding the extracted micro-sample and an adjacent hinge element via the holding device. The micro-sample adopts a first spatial orientation relative to the optical axis. The method also includes producing a bending edge in the hinge element by way of irradiation with a beam of charged particles such that the adjacent micro-sample is moved in space and the spatial orientation of the micro-sample is altered. The method further includes holding the micro-sample in a second spatial orientation relative to the optical axis, wherein the second spatial orientation differs from the first spatial orientation.

An X-ray imaging inspection system for inspecting items comprises an X-ray source 10 extending around an imaging volume 16, and defining a plurality of source points 14 from which X-rays can be directed through the imaging volume. An X-ray detector array 12 also extends around the imaging volume 16 and is arranged to detect X-rays from the source points which have passed through the imaging volume, and to produce output signals dependent on the detected X-rays. A conveyor 20 is arranged to convey the items through the imaging volume 16.

An example method for aligning a spectrometer is described herein. The spectrometer includes a radiation source, a crystal analyzer, and a detector that are all positioned on an instrument plane. The method includes rotating the crystal analyzer about an axis that is within the instrument plane and perpendicular to a rotation plane such that (i) a reciprocal lattice vector of the crystal analyzer is within the instrument plane or (ii) a component of the reciprocal lattice vector within the rotation plane is perpendicular to the instrument plane. An origin of the reciprocal lattice vector is located on the axis. The method further includes tilting the crystal analyzer or translating the detector such that the reciprocal lattice vector bisects a line segment that is bounded by the detector and the radiation source. Example spectrometers related to the example method are also disclosed.

Molecular structure may be determined based on structure factors solved from the diffraction pattern and the electron microscopy image of the sample. In particular, the amplitudes of the structure factors may be determined based on intensities of diffraction peaks in the multiple diffraction patterns. The phases of the structure factors may be determined based on electron microscopy images and the intensities of the diffraction peaks.

A toner including a toner particle, wherein the toner particle includes a toner base particle containing a binder resin, and a shell on the surface of the toner base particle; the shell contains a metal compound and an organosilicon polymer; the shell has at least an exposed portion of the metal compound and an exposed portion of the organosilicon polymer, on the surface of the toner particle; and in an analysis of a cross section of the toner particle by TEM-EDX, Ha (nm) and Hb (nm) which are average distances from the interface of the toner base particle and the shell up to the toner particle surface at the exposed portion of the metal compound and at the exposed portion of the organosilicon polymer, respectively, on the toner particle surface, satisfy Expression (1) below:

Molecular structure may be determined based on structure factors solved from the diffraction pattern and the electron microscopy image of the sample. In particular, the amplitudes of the structure factors may be determined based on intensities of diffraction peaks in the multiple diffraction patterns. The phases of the structure factors may be determined based on electron microscopy images and the intensities of the diffraction peaks.

An X-ray imaging inspection system for inspecting items comprises an X-ray source 10 extending around an imaging volume 16, and defining a plurality of source points 14 from which X-rays can be directed through the imaging volume. An X-ray detector array 12 also extends around the imaging volume 16 and is arranged to detect X-rays from the source points which have passed through the imaging volume, and to produce output signals dependent on the detected X-rays. A conveyor 20 is arranged to convey the items through the imaging volume 16.

An X-ray imaging inspection system for inspecting items comprises an X-ray source 10 extending around an imaging volume 16, and defining a plurality of source points 14 from which X-rays can be directed through the imaging volume. An X-ray detector array 12 also extends around the imaging volume 16 and is arranged to detect X-rays from the source points which have passed through the imaging volume, and to produce output signals dependent on the detected X-rays. A conveyor 20 is arranged to convey the items through the imaging volume 16.

The present specification discloses a multi-view X-ray inspection system having, in one of several embodiments, a three-view configuration with three X-ray sources. Each X-ray source rotates and is configured to emit a rotating X-ray pencil beam and at least two detector arrays, where each detector array has multiple non-pixellated detectors such that at least a portion of the non-pixellated detectors are oriented toward both the two X-ray sources.

Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.