The invention concerns a method for processing energy spectra of radiation transmitted by an object irradiated by an ionising radiation source, in particular X-ray radiation, for medical imaging or non-destructive testing applications. The method uses a detector comprising a plurality of pixels, each pixel being capable of acquiring a spectrum of the radiation transmitted by the object. The method makes it possible, based on a plurality of detected spectra, to estimate a spectrum, referred to as the scattering spectrum, representative of radiation scattered by the object. The estimation involves taking into account a spatial model of the scattering spectrum. Each acquired spectrum is corrected taking into account the estimated scattering spectrum. The invention makes it possible to reduce the influence of the scattering, by the object, of the spectrum emitted by the source.

The invention concerns a method for processing energy spectra of radiation transmitted by an object irradiated by an ionising radiation source, in particular X-ray radiation, for medical imaging or non-destructive testing applications. The method uses a detector comprising a plurality of pixels, each pixel being capable of acquiring a spectrum of the radiation transmitted by the object. The method makes it possible, based on a plurality of detected spectra, to estimate a spectrum, referred to as the scattering spectrum, representative of radiation scattered by the object. The estimation involves taking into account a spatial model of the scattering spectrum. Each acquired spectrum is corrected taking into account the estimated scattering spectrum. The invention makes it possible to reduce the influence of the scattering, by the object, of the spectrum emitted by the source.

Aspects of the disclosure are directed to an analysis of a material of a component. A radiation source is activated to transmit radiation to the component. A beam pattern is obtained based on the component interfering with the radiation. The beam pattern is compared to a reference beam pattern. An anomaly is detected to exist in the material when the comparison indicates a deviation between the beam pattern and the reference beam pattern.

Aspects of the disclosure are directed to an analysis of a material of a component. A radiation source is activated to transmit radiation to the component. A beam pattern is obtained based on the component interfering with the radiation. The beam pattern is compared to a reference beam pattern. An anomaly is detected to exist in the material when the comparison indicates a deviation between the beam pattern and the reference beam pattern.

The present invention provides an X-ray analysis device and a peak search method capable of realizing highly accurate peak searches without significantly increasing a processing time. Peak search processing includes: a step (S220) for acquiring a profile of a spectrum; a step (S240) for narrowing down a wavelength range where a true value of a peak wavelength (peak intensity) may be present, taking into account statistical fluctuation of a measured value; a step (S250) for measuring the intensity of the X-rays at the long wavelength end, the short wavelength end, and the intermediate wavelength in the narrowed wavelength range; a step (S255) for calculating a quadratic function passing through the respective measured values in the above-described three wavelengths; and a step (S260) for calculating the wavelength of the vertex of the calculated quadratic function as the peak wavelength.

A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

The invention provides a novel microfluidic platform for use in electro-crystallization and electro-crystallography experiments. The manufacturing and use of graphene as X-ray compatible electrodes allows the application of electric fields on-chip, during X-ray analysis. The presence of such electric fields can be used to modulate the structure of protein (or other) molecules in crystalline (for X-ray diffraction) or solution form (for X-ray scattering). Additionally, the presence of an electric field can be used to extend the lifetime of fragile samples by expediting the removal of reactive secondary radiation damage species.

The invention provides a novel microfluidic platform for use in electro-crystallization and electro-crystallography experiments. The manufacturing and use of graphene as X-ray compatible electrodes allows the application of electric fields on-chip, during X-ray analysis. The presence of such electric fields can be used to modulate the structure of protein (or other) molecules in crystalline (for X-ray diffraction) or solution form (for X-ray scattering). Additionally, the presence of an electric field can be used to extend the lifetime of fragile samples by expediting the removal of reactive secondary radiation damage species.

A spectrometer includes a crystal analyzer having a radius of curvature that defines a Rowland circle, a sample stage configured to support a sample such that the sample is offset from the Rowland circle, x-ray source configured to emit unfocused x-rays toward the sample stage, and a position-sensitive detector that is tangent to the Rowland circle. A method performed via a spectrometer includes emitting, via an x-ray source, unfocused x-rays toward a sample that is mounted on a sample stage such that the sample is offset from the Rowland Circle, thereby causing the sample to emit x-rays that impinge on the crystal analyzer or transmit a portion of the unfocused x-rays to impinge on the crystal analyzer; scattering, via the crystal analyzer, the x-rays that impinge on the crystal analyzer; and detecting the scattered x-rays via a position-sensitive detector that is tangent to the Rowland circle.