G01N23/203

METHOD AND SYSTEM FOR DETERMINING SAMPLE COMPOSITION FROM SPECTRAL DATA

Method and system are disclosed for determining sample composition from spectral data acquired by a charged particle microscopy system. Chemical elements in a sample are identified by processing the spectral data with a trained neural network (NN). If the identified chemical elements not matching with a known elemental composition of the sample, the trained NN is retrained with the spectral data and the known elemental composition of the sample. The retrained NN can then be used to identify chemical elements within other samples.

Methods and means for determining the existence of cement debonding within a cased borehole using x-ray techniques
11542808 · 2023-01-03 · ·

An x-ray-based cement evaluation tool for determining whether a cement bond exists between the casing and cement of a cemented borehole is provided, the tool including at least: an internal length comprising a sonde section, wherein said sonde section further comprises an x-ray source; a radiation shield for radiation measuring detectors; arrayed pixelated detectors; sonde-dependent electronics; and a plurality of tool logic electronics and PSUs. A method of using an x-ray-based cement evaluation tool for measuring a cement bond between a casing and the cement of a cemented borehole is also provided, the method including: producing x-ray in a conical beam to illuminate a well casing; measurement of the returning photons as a function of radial and axial offset; remapping the intensity of returning photons to a geometric response within the casing and cement; and determining whether an annulus is present between the casing and cement.

Methods and means for determining the existence of cement debonding within a cased borehole using x-ray techniques
11542808 · 2023-01-03 · ·

An x-ray-based cement evaluation tool for determining whether a cement bond exists between the casing and cement of a cemented borehole is provided, the tool including at least: an internal length comprising a sonde section, wherein said sonde section further comprises an x-ray source; a radiation shield for radiation measuring detectors; arrayed pixelated detectors; sonde-dependent electronics; and a plurality of tool logic electronics and PSUs. A method of using an x-ray-based cement evaluation tool for measuring a cement bond between a casing and the cement of a cemented borehole is also provided, the method including: producing x-ray in a conical beam to illuminate a well casing; measurement of the returning photons as a function of radial and axial offset; remapping the intensity of returning photons to a geometric response within the casing and cement; and determining whether an annulus is present between the casing and cement.

OFFCUT ANGLE DETERMINATION USING ELECTRON CHANNELING PATTERNS

Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

OFFCUT ANGLE DETERMINATION USING ELECTRON CHANNELING PATTERNS

Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

Systems and methods for using backscatter imaging in precision agriculture

Systems and methods for determining a mass of a crop by using at least one X-ray scanner is provided. The method includes obtaining at least two scan images of the crop, where a first of the at least two images is obtained along a first plane relative to the crop and a second of the at least two images is obtained along a second plane relative to the crop, and where the first plane is angularly displaced relative to the second plane, registering the first image and the second image, correcting the registered first and second images, and determining the mass of the crop from the corrected first and second images.

Systems and methods for using backscatter imaging in precision agriculture

Systems and methods for determining a mass of a crop by using at least one X-ray scanner is provided. The method includes obtaining at least two scan images of the crop, where a first of the at least two images is obtained along a first plane relative to the crop and a second of the at least two images is obtained along a second plane relative to the crop, and where the first plane is angularly displaced relative to the second plane, registering the first image and the second image, correcting the registered first and second images, and determining the mass of the crop from the corrected first and second images.

APPARATUS AND METHOD FOR SENSING AND ANALYZING SKIN CONDITION
20220405930 · 2022-12-22 ·

A skin imaging and diagnostic method and apparatus comprising, a frame, configured to circumscribe a target tissue on the skin of a patient. An electro-optics unit of the apparatus comprising: an illuminator assembly comprising illuminating elements, configured to provide illumination light on the target tissue; an imaging optics assembly; and an image sensor assembly, comprising an image sensor, wherein the imaging optics assembly is configured to collect backscattered said illumination light from the target tissue and focus the collected backscattered illumination light on the image sensor; and the image sensor is disposed to consequently sense an image of the target tissue. A controller configured to activate illuminating elements and to capture each image from the image sensor.

APPARATUS AND METHOD FOR SENSING AND ANALYZING SKIN CONDITION
20220405930 · 2022-12-22 ·

A skin imaging and diagnostic method and apparatus comprising, a frame, configured to circumscribe a target tissue on the skin of a patient. An electro-optics unit of the apparatus comprising: an illuminator assembly comprising illuminating elements, configured to provide illumination light on the target tissue; an imaging optics assembly; and an image sensor assembly, comprising an image sensor, wherein the imaging optics assembly is configured to collect backscattered said illumination light from the target tissue and focus the collected backscattered illumination light on the image sensor; and the image sensor is disposed to consequently sense an image of the target tissue. A controller configured to activate illuminating elements and to capture each image from the image sensor.

SEGMENTED MULTI-CHANNEL, BACKSIDE ILLUMINATED, SOLID STATE DETECTOR WITH A THROUGH-HOLE FOR DETECTING SECONDARY AND BACKSCATTERED ELECTRONS

A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.