A sample inspection apparatus includes a source of electromagnetic radiation, a beam former for producing a substantially conical shell of the radiation with the conical shell being incident on a sample to be inspected, a detection surface arranged to receive diffracted radiation after incidence of the conical shell beam upon the sample to be inspected, and an unfocused collimator provided at or close to the detection surface and having a grid structure formed of cells which each stare at different portions of the conical shell.

There is presented an apparatus for identifying a sample. Such an apparatus may be used to detect unwanted items as part of a security screening system. The apparatus includes a platform for receiving the sample, at least one electromagnetic radiation emitter, a plurality of detectors and a calculator. The electromagnetic radiation emitter is adapted to provide a plurality of conical shells of radiation. Each conical shell has a characteristic propagation axis associated with it. The detectors are arranged to detect radiation diffracted by the sample upon incidence of one or more conical shells of radiation. Each detector is located on the characteristic propagation axis associated with a corresponding conical shell. The calculator is adapted to calculate a parameter of the sample based on the detected diffracted radiation. The parameter includes a lattice spacing of the sample.

Molecular structure of a crystal may be solved based on at least two diffraction tilt series acquired from a sample. The two diffraction tilt series include multiple diffraction patterns of at least one crystal of the sample acquired at different electron doses. In some examples, the two diffraction tilt series are acquired at different magnifications.

Crystallographic information of crystalline sample can be determined from one or more three-dimensional diffraction pattern datasets generated based on diffraction patterns collected from multiple crystals. The crystals for diffraction pattern acquisition may be selected based on a sample image. At a location of each selected crystal, multiple diffraction patterns of the crystal are acquired at different angles of incidence by tilting the electron beam, wherein the sample is not rotated while the electron beam is directed at the selected crystal.

Provided are a processing method, a processing apparatus and a processing program which can perform pole figure measurement continuously without overlapping of an angle α in a pole figure with the small number of times of φ scan, thereby enabling the efficient measurement. The processing method for determining conditions of pole figure measurement by X-ray diffraction, includes the steps of: receiving input of a diffraction angle 2θ; and determining an angle ω formed by an incident X-ray and an x-axis, and a tilt angle χ of a sample in each φ scan for a rotation angle φ within a sample plane so as to make a range of an angle α continuous from α=90° to α=0° without overlapping, the angle α being formed by the sample plane and a scattering vector, the range of the angle α are detectable at a time on a two-dimensional detection plane in the pole figure measurement at the input angle 2θ, in which determining the angle ω and the angle χ is repeated.

Provided are a processing method, a processing apparatus and a processing program which can perform pole figure measurement continuously without overlapping of an angle α in a pole figure with the small number of times of φ scan, thereby enabling the efficient measurement. The processing method for determining conditions of pole figure measurement by X-ray diffraction, includes the steps of: receiving input of a diffraction angle 2θ; and determining an angle ω formed by an incident X-ray and an x-axis, and a tilt angle χ of a sample in each φ scan for a rotation angle φ within a sample plane so as to make a range of an angle α continuous from α=90° to α=0° without overlapping, the angle α being formed by the sample plane and a scattering vector, the range of the angle α are detectable at a time on a two-dimensional detection plane in the pole figure measurement at the input angle 2θ, in which determining the angle ω and the angle χ is repeated.

The present invention provides a method of generating a fingerprint for a gemstone (5), for example a diamond, using x-ray imaging. The fingerprint comprises a three-dimensional map of a crystal or crystals present within the gemstone (5) including internal imperfections of the crystals and may also comprise further information about the gemstone (5). The method comprising the steps of: mounting the gemstone (5) in a sample holder (4) of an imaging apparatus, the imaging apparatus comprising a detector (6), a sample holder (4) mounted on a sample stage (3), an x-ray source (1), the sample holder (4) and the x-ray source (1) aligned along an optical axis, wherein the sample holder (4) is movable relative to the at least one x-ray source (1) and the detector (6); exposing the gemstone (5) to x-ray radiation from the x-ray source (1), whilst moving the sample holder (4) according to a search strategy that is predetermined for the gemstone (5) based on known physical characteristics of the gemstone (5); using the detector (6) to locate diffraction and/or extinction spots generated by the lattice of the crystals; utilising the located diffraction and/or extinction spots to calculate information about the position, orientation, and phase of the crystals; generating a suitable x-ray diffraction scanning strategy from the calculated information, the strategy including moving the sample holder (4) relative to the x-ray source (1) and the detector (6) and exposing the gemstone (5) to appropriate x-ray radiation as the sample holder (4) is moved, wherein the strategy is generated to locate and classify internal imperfections in the at least one crystal; scanning the gemstone according to the scanning strategy and recording the diffraction and/or extinction images using the detector (6); and generating a fingerprint from the recorded diffraction and/or extinction images.

A method provides a design layout having a pattern of features. The design layout is transferred onto a substrate on a semiconductor substrate using a mask. A scanning parameter is determined based on the design layout. An image of the substrate is generated using the determined scanning parameter. A substrate defect is identified by comparing a first number of closed curves in a region of the image and a second number of polygons in a corresponding region of the design layout.

Systems for x-ray diffraction/scattering measurements having greater x-ray flux and x-ray flux density are disclosed. These are useful for applications such as material structural analysis and crystallography. The higher flux is achieved by using designs for x-ray targets comprising a number of microstructures of one or more selected x-ray generating materials fabricated in close thermal contact with a substrate having high thermal conductivity. This allows for bombardment of the targets with higher electron density or higher energy electrons, which leads to greater x-ray flux. The high brightness/high flux source may then be coupled to an x-ray reflecting optical system, which can focus the high flux x-rays to a spots that can be as small as one micron, leading to high flux density, and used to illuminate materials for the analysis based on their scattering/diffractive effects.

Systems for x-ray diffraction/scattering measurements having greater x-ray flux and x-ray flux density are disclosed. These are useful for applications such as material structural analysis and crystallography. The higher flux is achieved by using designs for x-ray targets comprising a number of microstructures of one or more selected x-ray generating materials fabricated in close thermal contact with a substrate having high thermal conductivity. This allows for bombardment of the targets with higher electron density or higher energy electrons, which leads to greater x-ray flux. The high brightness/high flux source may then be coupled to an x-ray reflecting optical system, which can focus the high flux x-rays to a spots that can be as small as one micron, leading to high flux density, and used to illuminate materials for the analysis based on their scattering/diffractive effects.