User-friendly single-crystal X-ray structure analysis apparatus and method for quickly performing a single-crystal X-ray structure analysis using a crystalline sponge and enabling the analysis including management of related information, and a sample holder and an applicator therefor are provided. There are provided a single-crystal X-ray structure analysis apparatus that performs a structure analysis of a material is provided, the apparatus comprising a sample holder that comprises a porous complex crystal capable of soaking the sample in a plurality of fine pores formed therein and that holds the sample; a goniometer that rotationally moves with the sample holder 250 being attached; and an information acquisition section 600 that acquires information about the porous complex crystal.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

Aspects of the disclosure are directed to an analysis of a material of a component. A radiation source is activated to transmit radiation to the component. A beam pattern is obtained based on the component interfering with the radiation. The beam pattern is compared to a reference beam pattern. An anomaly is detected to exist in the material when the comparison indicates a deviation between the beam pattern and the reference beam pattern.

Aspects of the disclosure are directed to an analysis of a material of a component. A radiation source is activated to transmit radiation to the component. A beam pattern is obtained based on the component interfering with the radiation. The beam pattern is compared to a reference beam pattern. An anomaly is detected to exist in the material when the comparison indicates a deviation between the beam pattern and the reference beam pattern.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

A sample holder capable of quickly and precisely performing single-crystal X-ray structure analysis by quickly and easily soaking a sample in a crystalline sponge, and also a sample holder unit and a soaking method therefor are provided. There are provided a sample holder used in a single-crystal X-ray structure analysis apparatus is provided, the sample holder comprising a base part attached to a goniometer in the single-crystal X-ray structure analysis apparatus; a sample holding part formed in the base part to hold the porous complex crystal capable of soaking the sample in a plurality of fine pores formed therein; and a sample introduction structure formed in the base part and introducing the sample to be soaked in the porous complex.

A sample holder capable of quickly and precisely performing single-crystal X-ray structure analysis by quickly and easily soaking a sample in a crystalline sponge, and also a sample holder unit and a soaking method therefor are provided. There are provided a sample holder used in a single-crystal X-ray structure analysis apparatus is provided, the sample holder comprising a base part attached to a goniometer in the single-crystal X-ray structure analysis apparatus; a sample holding part formed in the base part to hold the porous complex crystal capable of soaking the sample in a plurality of fine pores formed therein; and a sample introduction structure formed in the base part and introducing the sample to be soaked in the porous complex.

The invention provides a novel microfluidic platform for use in electro-crystallization and electro-crystallography experiments. The manufacturing and use of graphene as X-ray compatible electrodes allows the application of electric fields on-chip, during X-ray analysis. The presence of such electric fields can be used to modulate the structure of protein (or other) molecules in crystalline (for X-ray diffraction) or solution form (for X-ray scattering). Additionally, the presence of an electric field can be used to extend the lifetime of fragile samples by expediting the removal of reactive secondary radiation damage species.

The invention provides a novel microfluidic platform for use in electro-crystallization and electro-crystallography experiments. The manufacturing and use of graphene as X-ray compatible electrodes allows the application of electric fields on-chip, during X-ray analysis. The presence of such electric fields can be used to modulate the structure of protein (or other) molecules in crystalline (for X-ray diffraction) or solution form (for X-ray scattering). Additionally, the presence of an electric field can be used to extend the lifetime of fragile samples by expediting the removal of reactive secondary radiation damage species.