An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

A sample inspection system and a corresponding method for inspecting a sample is provided. The sample inspection system includes a beam former, a beam modulator an energy resolving detector and a collimator. The beam former is adapted to receive an electromagnetic radiation from an electromagnetic source to generate a primary beam of electromagnetic radiation. The beam modulator is provided at a distance from the beam former to define a sample chamber. The collimator is provided between the beam modulator and the energy resolving detector. The collimator has a plurality of channels adapted to receive diffracted or scattered radiation. Upon incidence of the primary beam onto the beam modulator, the beam modulator provides a reference beam of diffracted or scattered radiation. The energy resolving detector is arranged to detect the reference beam.

A sample inspection system and a corresponding method for inspecting a sample is provided. The sample inspection system includes a beam former, a beam modulator an energy resolving detector and a collimator. The beam former is adapted to receive an electromagnetic radiation from an electromagnetic source to generate a primary beam of electromagnetic radiation. The beam modulator is provided at a distance from the beam former to define a sample chamber. The collimator is provided between the beam modulator and the energy resolving detector. The collimator has a plurality of channels adapted to receive diffracted or scattered radiation. Upon incidence of the primary beam onto the beam modulator, the beam modulator provides a reference beam of diffracted or scattered radiation. The energy resolving detector is arranged to detect the reference beam.

A method of identifying at least one pole location on a bearing element formed from a metal source element. The method is non-destructive and does not alter the surface of the bearing element. The method includes applying X-rays to a plurality of regions of a bearing element, and measuring diffracted intensity values of X-ray diffraction vectors or bi-sectors at the plurality of regions. The method includes determining at least one pole location on the bearing element based on the diffracted intensity values.

A method of identifying at least one pole location on a bearing element formed from a metal source element. The method is non-destructive and does not alter the surface of the bearing element. The method includes applying X-rays to a plurality of regions of a bearing element, and measuring diffracted intensity values of X-ray diffraction vectors or bi-sectors at the plurality of regions. The method includes determining at least one pole location on the bearing element based on the diffracted intensity values.

Methods are provided for determining a depositional environment of a sample of a subterranean environment. An example method includes measuring intensities for a crystallographic plane (CP) 100 peak and a CP 101 peak for quartz in a diffractogram, calculating a ratio of the intensities of the CP 100 peak to the CP 101 peak, and identifying a depositional environment for the sample from the ratio.

A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.

A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.

An object of the present invention is to provide a method of preparing a sample for crystallographic analysis used for structure determination of a compound having a nucleophilic group based on the crystalline sponge method. The present invention provides a method of preparing a sample for crystallographic analysis used for structure determination of a compound having a nucleophilic group based on the crystalline sponge method, the method including the steps: (A) derivatizing the nucleophilic group of the compound, and (B) soaking the derivatized compound into a crystalline sponge. The method of the invention allows the structure (particularly, absolute configuration) of a compound which is not amenable to structural analysis based on the crystalline sponge method to be quickly and precisely determined by a simple procedure.