A device for measuring short-wavelength characteristic X-ray diffraction based on array detection, and a measurement and analysis method based on the device are provided. An array detector of the device only detects and receives a diffraction ray which is diffracted by a material of a to-be-measured part inside a sample and passes through a through hole of a receiving collimator, and rays passing through a positioning hole. The to-be-measured part inside the sample is placed at the center of the diffractometer circle of the device. The method is performed with the device. With the present disclosure, a diffraction pattern of a part inside the sample with a centimeter thickness, i.e. Debye rings, can be rapidly and non-destructively measured, thereby rapidly and non-destructively measuring and analyzing crystal structures, and its crystal structural change of the part inside the sample, such as phase, texture, and stress.

A device for measuring short-wavelength characteristic X-ray diffraction based on array detection, and a measurement and analysis method based on the device are provided. An array detector of the device only detects and receives a diffraction ray which is diffracted by a material of a to-be-measured part inside a sample and passes through a through hole of a receiving collimator, and rays passing through a positioning hole. The to-be-measured part inside the sample is placed at the center of the diffractometer circle of the device. The method is performed with the device. With the present disclosure, a diffraction pattern of a part inside the sample with a centimeter thickness, i.e. Debye rings, can be rapidly and non-destructively measured, thereby rapidly and non-destructively measuring and analyzing crystal structures, and its crystal structural change of the part inside the sample, such as phase, texture, and stress.

In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

An intelligent lithology identification system and method based on images and spectrum technology. The intelligent lithology identification system includes a rock shape analysis system, an image identification system, a sample processing system, a spectrum analysis system, and a central analysis and control system; wherein the central analysis and control system determines the final lithology of a sample according to the rock identification results from the image identification system and the analysis results from the spectrum analysis system. The technical solution further identifies the content and type of minerals by using spectrum technology, integrates and analyzes the results of spectrum analysis and image identification, and finally gives the lithology of the rock, which greatly improves the accuracy of lithology identification.

There is provided an analytical method capable of generating a high resolution spectrum of X-rays with an intended energy. The analytical method is for use in an analytical apparatus having a diffraction grating for spectrally dispersing X-rays emanating from a sample, an image sensor for detecting the spectrally dispersed X-rays, and an incident angle control mechanism for controlling the incident angle of X-rays impinging on the diffraction grating. The image sensor has a plurality of photosensitive elements arranged in the direction of energy dispersion. The analytical method starts with specifying an energy of X-rays to be acquired. The incident angle is adjusted based on the specified energy to bring the focal plane of the diffraction grating into positional coincidence with those one or ones of the photosensitive elements which detect X-rays having the specified energy.

The present invention relates to a lubricant containing molybdenum sulfide particles, and the molybdenum sulfide particles contain molybdenum disulfide having a 3R crystal structure. The present invention relates to a lubricating composition containing molybdenum sulfide particles, which are the lubricant, and a base oil which is a mineral oil, a synthetic oil, or a partially synthetic oil.

A sample holder (10) filled with a sample is held in a base member (20), and an airtight member (30) is mounted on the base member (20) so as to cover the surroundings of the sample holder (10), thereby forming a sample holding structure in a closed space. The airtight member (30) includes a fitting portion (35) which is configured to be fitted and mounted in a mounting portion (21).

A film forming apparatus and a film forming apparatus usage. The film forming apparatus has a film forming chamber, a substrate retaining part, a heating unit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beam reflected by the film, and a detection unit that detects physical characteristics of the film based on the beam received by the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.