An X-ray analyzer includes an X-ray excitation device, an X-ray detection device, and a gate valve. The X-ray excitation device includes a sample chamber in which a sample as an analysis target can be disposed. The X-ray detection device includes a TES which can detect a characteristic X-ray emitted from the sample, and a room-temperature shield which surrounds the TES. The gate valve is disposed between the X-ray excitation device and the X-ray detection device. The inside of the room-temperature shield is provided to enable communication with the inside of the sample chamber. The gate valve includes a partition plate provided to enable blocking of a communication between the inside of the sample chamber and the inside of the room-temperature shield. The partition plate has a pressure-resistant X-ray window.

An improved spectroscopic analysis apparatus and method are disclosed, comprising directing a beam of radiation onto a measurement location on a specimen, thereby causing a flux of X-rays to emanate from this location; examining the X-ray flux using a detector arrangement, thus acquiring a spectrum; choosing a set of different measurement directions originating from the location; recording outputs from the detector arrangement for different measurement directions; adopting a spectral model that is a convoluted mix of terms B and L.sub.p, where B is the Bremsstrahlung background spectrum and L.sub.p comprises spectral lines corresponding to the specimen composition at the measurement location; and then automatically deconvolving the set of measurements on the basis of the spectral model to calculate L.sub.p to determine the chemical composition of the specimen at the measurement location. The method includes corrections for differential X-ray absorption within the specimen along the different measurement directions.

A method for evaluating a secondary optical system of an electron beam inspection device provided with a primary optical system that irradiates a sample placed at an observation target position with an electron beam emitted from an electron source, and the secondary optical system that forms, on a detector, an enlarged image of an electron beam generated from the sample or an electron beam transmitted through the sample. The method includes: placing a photoelectric surface at the observation target position; irradiating the photoelectric surface with laser; forming an enlarged image of an electron beam generated from the photoelectric surface on the detector by the secondary optical system; and evaluating the secondary optical system based on an electron beam image obtained by the detector.

A method for evaluating a secondary optical system of an electron beam inspection device provided with a primary optical system that irradiates a sample placed at an observation target position with an electron beam emitted from an electron source, and the secondary optical system that forms, on a detector, an enlarged image of an electron beam generated from the sample or an electron beam transmitted through the sample. The method includes: placing a photoelectric surface at the observation target position; irradiating the photoelectric surface with laser; forming an enlarged image of an electron beam generated from the photoelectric surface on the detector by the secondary optical system; and evaluating the secondary optical system based on an electron beam image obtained by the detector.

The invention relates to a method of sampling and displaying information comprising scanning a beam over the sample in a series of N overlapping sub-frames, each comprising M.sub.n scan positions, thereby irradiating the sample at N×M.sub.n scan positions, which form the field of view; detecting a signal, sampled for each scan position, emanating from the sample; and displaying the sub-frames having at least N×M.sub.n pixels in such a way, that after the series of N scans each of the pixels displays information derived from the signal from one or more scan positions; in which after the scan of the first sub-frame each of the pixels displays information derived from the scan positions of the first sub-frame; and after the scan of the second sub-frame each of the pixels displays information derived during the scanning of the first, the second, or both sub-frames.

A control unit for generating a timing signal for an imaging unit in an inspection system in which an image of an inspection target object is captured by the imaging unit while the inspection target object is caused to travel in a predetermined direction includes a traveling distance determination section configured to detect a traveling distance of the inspection target object based on a count value acquired as an integer value from a laser interferometer provided in the inspection system for detecting a traveling distance of the inspection target object, and configured to determine whether the detected traveling distance reaches a threshold, and a timing signal generation section configured to generate a timing signal when it is determined that the detected traveling distance reaches the threshold. The traveling distance determination section executes the determination by using a plurality of values selectively as the threshold.

A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.

A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.