A detector supplement device for integration in a spectroscopy setup with the spectroscopy setup including a vacuum chamber, a light source, a sample irradiating a reflected photon beam and a charged particle beam in the same direction of propagation into a radiation detector which is able to detect ultrafast electric currents originating from charged particles. The detector supplement device includes a Rogowski coil placeable inside the vacuum chamber between the sample and radiation detector. The charged particle beam is guided through the hollow core of the Rogowski coil allowing synchronized measurements of electrical currents due to the charged particle beam correlated to the reflected photon beam, while irradiation of the reflected photon beam and the charged particle beam takes place in the same direction of propagation.

Described are illumination control devices, for an analyser arrangement and method of using thereof. The analyser arrangement is configured to determine at least one parameter related to charged particles emitted from a sample. The illumination control device comprises an input for input electromagnetic radiation, and is configured to control the illumination of the sample to induce the emission of charged particles from the sample and to operate in at least a first mode and a second mode, wherein the illumination control device in the first mode, is configured to illuminate a first area of the sample with a first part of the input electromagnetic radiation and a second area part of the first area of the sample with a second part of the input electromagnetic radiation, and in a second mode, is configured to illuminate the second area of the sample with the second part of the input electromagnetic radiation.

Described are illumination control devices, for an analyser arrangement and method of using thereof. The analyser arrangement is configured to determine at least one parameter related to charged particles emitted from a sample. The illumination control device comprises an input for input electromagnetic radiation, and is configured to control the illumination of the sample to induce the emission of charged particles from the sample and to operate in at least a first mode and a second mode, wherein the illumination control device in the first mode, is configured to illuminate a first area of the sample with a first part of the input electromagnetic radiation and a second area part of the first area of the sample with a second part of the input electromagnetic radiation, and in a second mode, is configured to illuminate the second area of the sample with the second part of the input electromagnetic radiation.

A novel process allows defects in materials, in particular in solid bodies (18), to be localized with considerably higher spatial resolution than before. Defects can be quickly and economically imaged with high spatial resolution. It is possible to contactlessly spin-selectively excite and capture or image defects in the solid body with high sensitivity, high dynamic range, large field of view and excellent resolution, which far exceeds the present capabilities of optical detection processes. Furthermore, with the process there is an excellent possibility for detecting spin even in individual images, wherein high contrast of the spin states and better fidelity of reproduction of the spin states are made possible. The device (10) and the process are suitable for quantum calculation using defect spins in solid bodies (18), for quantum-capable capturing and for quantum-capable measurement networks.

A novel process allows defects in materials, in particular in solid bodies (18), to be localized with considerably higher spatial resolution than before. Defects can be quickly and economically imaged with high spatial resolution. It is possible to contactlessly spin-selectively excite and capture or image defects in the solid body with high sensitivity, high dynamic range, large field of view and excellent resolution, which far exceeds the present capabilities of optical detection processes. Furthermore, with the process there is an excellent possibility for detecting spin even in individual images, wherein high contrast of the spin states and better fidelity of reproduction of the spin states are made possible. The device (10) and the process are suitable for quantum calculation using defect spins in solid bodies (18), for quantum-capable capturing and for quantum-capable measurement networks.

Provided is a compact device which captures, over a large solid angle range, electrically charged particles emitted from a point source and parallelizes the trajectories of said charged particles. The present invention is configured from: an electrostatic lens comprising a plurality of axisymmetric electrodes (10-14) and an axisymmetric aspherical mesh (2) which has a surface that is concave away from the point source; and a flat collimator plate (3) positioned coaxially with the electrostatic lens. The acceptance angle for the electrically charged particles generated from a point source (7) is 30 or greater. The shape of the aspherical mesh (2), and the potentials and the positions of a ground electrode (10) and application electrodes (11-15) are adjusted so that the trajectories of the electrically charged particles are substantially parallelized by the electrostatic lens. The electrostatic lens and the flat collimator plate are positioned on a common axis.

Methods and systems for performing relatively high energy X-ray Fluorescence (XRF) measurements and relatively low energy X-ray photoelectron spectroscopy (XPS) measurements over a desired inspection area of a specimen are presented. Combined XPS and XRF measurements of a specimen are achieved with illumination tailored to each respective metrology technique. A high brightness, high energy x-ray illumination source is employed in combination with one or more secondary fluorescence targets. The high energy x-ray illumination source supplies high energy x-ray illumination to a specimen to perform high energy XRF measurements. In addition, the high energy x-ray illumination source supplies high energy x-ray illumination to one or more secondary fluorescence targets. The one or more secondary fluorescence targets absorb some of the high energy x-ray photons and emit x-ray emission lines at a lower energy. The relatively low energy x-ray illumination is directed to the specimen to perform relatively low energy XPS measurements.

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

An analysis method includes: acquiring a photoelectron spectrum and an X-ray-excited Auger spectrum, the photoelectron spectrum being obtained by detecting photoelectrons emitted from a specimen by irradiating the specimen with X-rays, and the X-ray-excited Auger spectrum being obtained by detecting Auger electrons emitted from the specimen by irradiating the specimen with X-rays; calculating a quantitative value of each element included in the specimen based on the photoelectron spectrum; and performing a curve fitting process on the X-ray-excited Auger spectrum by using an electron beam-excited Auger electron standard spectrum, and calculating a quantitative value of an analysis target element in each chemical bonding state included in the specimen.

An analysis method includes: acquiring a photoelectron spectrum and an X-ray-excited Auger spectrum, the photoelectron spectrum being obtained by detecting photoelectrons emitted from a specimen by irradiating the specimen with X-rays, and the X-ray-excited Auger spectrum being obtained by detecting Auger electrons emitted from the specimen by irradiating the specimen with X-rays; calculating a quantitative value of each element included in the specimen based on the photoelectron spectrum; and performing a curve fitting process on the X-ray-excited Auger spectrum by using an electron beam-excited Auger electron standard spectrum, and calculating a quantitative value of an analysis target element in each chemical bonding state included in the specimen.