A detection device for molten metal is provided. The detection device includes a sample cup having a cavity configured to receive a sample of molten metal and a blob arranged in the cavity. The blob includes a carbide stabilizing element and a hydrogen releasing material including a hydroxide of an alkaline earth metal. The blob is provided for use in detecting phase change temperatures during solidification of a sample of molten cast iron. The blob is also resistant to moisture gain and moisture loss during transport and storage. A method of detecting phase change temperatures of the molten iron or molten cast iron sample using the blob and a method of manufacturing the blob are also provided.

A detection device for molten metal is provided. The detection device includes a sample cup having a cavity configured to receive a sample of molten metal and a blob arranged in the cavity. The blob includes a carbide stabilizing element and a hydrogen releasing material including a hydroxide of an alkaline earth metal. The blob is provided for use in detecting phase change temperatures during solidification of a sample of molten cast iron. The blob is also resistant to moisture gain and moisture loss during transport and storage. A method of detecting phase change temperatures of the molten iron or molten cast iron sample using the blob and a method of manufacturing the blob are also provided.

The present invention, in one aspect, provides systems and methods for using a single slug or multiple slugs containing one or more calibrators to determine a relationship between temperature and an electrical characteristic of the thermal sensor for use in connection with calibrating thermal sensors. In some embodiments, the present invention uses the described calibrator systems and methods to calibrate thermal control elements on a microfluidic device. In non-limiting embodiment, the calibrator can be one or more of droplets, plugs, slugs, segments or a continuous flow of any appropriate solution that, when heated, yields a thermal response profile with a plurality of features (e.g., maxima, minima, inflection points, linear regions, etc.).

This disclosure relates to determining a material transition point such as a melt-point, and to determining an annealing parameter based on the determined material transition point. Changes in a parameter associated with an electromagnetic circuit coupled to an object subject to heating are monitored. A material transition point is determined upon detecting a predetermined change in the parameter. The annealing parameter is derived from the determined material transition point.

This disclosure relates to determining a material transition point such as a melt-point, and to determining an annealing parameter based on the determined material transition point. Changes in a parameter associated with an electromagnetic circuit coupled to an object subject to heating are monitored. A material transition point is determined upon detecting a predetermined change in the parameter. The annealing parameter is derived from the determined material transition point.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

A Differential Scanning calorimetry (DSC) thermal analysis method for the action of an applied electric field includes: step 1, in an experiment module of a differential scanning calorimeter, placing a microelectrode crucible and a reference crucible on corresponding sensors, connecting electrode wires of the microelectrode crucible with a signal generator, setting signal parameters to be output, placing a tested sample in a gap between electrodes, closing a microelectrode crucible lid, and closing the experiment module; step 2, at a temperature-varying stage, measuring a DSC curve of the tested sample under the action of an electric field, and at a reheating stage, measuring a DSC curve of the tested sample with no electric field; and step 3, analyzing the DSC curves in combination with the related theories of dielectrics and thermodynamics, and calculating an electric field intensity of the tested sample and a phase transformation rate of the tested sample.

A Differential Scanning calorimetry (DSC) thermal analysis method for the action of an applied electric field includes: step 1, in an experiment module of a differential scanning calorimeter, placing a microelectrode crucible and a reference crucible on corresponding sensors, connecting electrode wires of the microelectrode crucible with a signal generator, setting signal parameters to be output, placing a tested sample in a gap between electrodes, closing a microelectrode crucible lid, and closing the experiment module; step 2, at a temperature-varying stage, measuring a DSC curve of the tested sample under the action of an electric field, and at a reheating stage, measuring a DSC curve of the tested sample with no electric field; and step 3, analyzing the DSC curves in combination with the related theories of dielectrics and thermodynamics, and calculating an electric field intensity of the tested sample and a phase transformation rate of the tested sample.

The present invention relates to a method and system for determining Copy Number Variations (CNVs) in a genomic test sample including target amplicons and a reference amplicons. Specifically, nucleic acid melting curves are generated for the test sample. A mathematical model is fitted to each of the nucleic acid melting curves to separate target and reference melting reactions within the measured nucleic acid melting curve. The fitting parameters of the mathematical model are calculated. A CNV of the test sample is determined based on the fitting parameters of the mathematical model corresponding to the target and reference melting reactions.