An illuminator/collector assembly can deliver incident light to a sample and collect return light returning from the sample. A sensor can measure ray intensities as a function of ray position and ray angle for the collected return light. A ray selector can select a first subset of rays from the collected return light at the sensor that meet a first selection criterion. In some examples, the ray selector can aggregate ray intensities into bins, each bin corresponding to rays in the collected return light that traverse within the sample an estimated optical path length within a respective range of optical path lengths. A characterizer can determine a physical property of the sample, such as absorptivity, based on the ray intensities, ray positions, and ray angles for the first subset of rays. Accounting for variations in optical path length traversed within the sample can improve accuracy.

A device for optical detection of analytes in a sample includes at least two optoelectronic components. The optoelectronic components include at least one optical detector configured to receive a photon and at least one optical emitter configured to emit a photon. The at least one optical emitter includes at least three optical emitters disposed in a flat, non-linear arrangement, and the at least one optical detector includes at least three optical detectors disposed in a flat, non-linear arrangement. The at least three optical emitters and the at least three optical detectors include at least three different wavelength characteristics.

A measuring device is provided for measuring the absorption of gases. The measuring device (1) includes a radiation source (2), a first detector element (3), a second detector element (9) and a reflector array (4). The reflector array (4) defines a first optical path (5) between the radiation source (2) and the first detector element (3) and defines a second optical path (10) between the radiation source (2) and the second detector element (9). The first optical path (5) has at least two points of intersection with itself and the second detector element (9) is arranged outside of a first plane which is defined by the radiation source (2) and two points of intersection (6) of the first optical path (5).

A gas sensor comprises an enclosure configured to receive a gas. The enclosure comprises a sidewall extending, around a transverse axis, between a first wall and a second wall. The sensor also comprises a light source configured to emit a light wave that propagates in the enclosure and forms, from the light source, a first light cone. A measuring photodetector is configured to detect the light wave emitted by the light source and propagated through the enclosure. The first wall and the second wall each comprise at least one reflective surface, forming a portion of an ellipsoid of revolution. Each reflective surface is associated with a rank n, n being an integer greater than or equal to 1.

Wafer inspection apparatuses and methods are described. The wafer inspection apparatus includes an optical module, at least one wafer holder for carrying a plurality of wafers, and a plurality of optical sensors. The optical module is configured to emit a plurality of light beams for simultaneously scanning the plurality of wafers carried by the at least one wafer holder. The plurality of optical sensors is configured to receive the light beams reflected by the plurality of wafers.

A microfluidic apparatus is provided. The microfluidic apparatus includes a first substrate having a first side and a second side opposite to each other; a grating layer on the second side of the first substrate, the grating layer including a plurality of grating blocks of different wavelength selectivity; a second substrate having a third side and a fourth side opposite to each other; the fourth side of the second substrate on a side of the third side away from the first substrate, and the second side of the first substrate on a side of the first side away from the second substrate; a light detection layer on the third side of the second substrate, the light detection layer including a plurality of detectors; and a microfluidic layer between the first substrate and the light detection layer, the microfluidic layer including a plurality of microfluidic channels.

Wafer inspection apparatuses and methods are described. The wafer inspection apparatus includes an optical module, at least one wafer holder for carrying a plurality of wafers, and a plurality of optical sensors. The optical module is configured to emit a plurality of light beams for simultaneously scanning the plurality of wafers carried by the at least one wafer holder. The plurality of optical sensors is configured to receive the light beams reflected by the plurality of wafers.

A microfluidic apparatus is provided. The microfluidic apparatus includes a first substrate having a first side and a second side opposite to each other; a grating layer on the second side of the first substrate, the grating layer including a plurality of grating blocks of different wavelength selectivity; a second substrate having a third side and a fourth side opposite to each other; the fourth side of the second substrate on a side of the third side away from the first substrate, and the second side of the first substrate on a side of the first side away from the second substrate; a light detection layer on the third side of the second substrate, the light detection layer including a plurality of detectors; and a microfluidic layer between the first substrate and the light detection layer, the microfluidic layer including a plurality of microfluidic channels.

An illuminator/collector assembly can deliver incident light to a sample and collect return light returning from the sample. A sensor can measure ray intensities as a function of ray position and ray angle for the collected return light. A ray selector can select a first subset of rays from the collected return light at the sensor that meet a first selection criterion. In some examples, the ray selector can aggregate ray intensities into bins, each bin corresponding to rays in the collected return light that traverse within the sample an estimated optical path length within a respective range of optical path lengths. A characterizer can determine a physical property of the sample, such as absorptivity, based on the ray intensities, ray positions, and ray angles for the first subset of rays. Accounting for variations in optical path length traversed within the sample can improve accuracy.

A device for optical detection of analytes in a sample includes at least two optoelectronic components. The optoelectronic components include at least one optical detector configured to receive a photon and at least one optical emitter configured to emit a photon. The at least one optical emitter includes at least three optical emitters disposed in a flat, non-linear arrangement, and the at least one optical detector includes at least three optical detectors disposed in a flat, non-linear arrangement. The at least three optical emitters and the at least three optical detectors include at least three different wavelength characteristics.