In a sample observation device, an image capturing unit includes an area image sensor that performs image capturing by the rolling shutter method in which a start of an exposure period of pixel columns in the pixel region is shifted by predetermined time, and a control unit controls the image capturing unit so that an exposure order in each of the pixel columns is reversed between a period in which a scanning unit scans a sample in a first direction and a period in which the scanning unit scans the sample in a second direction.

A method is disclosed for selecting an optimal value for an adjustable parameter of a structured light metrology (SLM) system, for scanning an object. The SLM system performs test scans of the object to acquire a plurality of sets of measurements of the object, wherein a different value is used for the parameter for each test scan. For each test scan, a value of a quality metric is calculated, based on the set of measurements of the object associated with the test scan and simulation data representing a simulated scan of the object by the SLM system. A test scan is then identified that has a quality metric value that satisfies a specified optimization criterion; and a value of the adjustable parameter that was used for the identified test scan is selected as the optimal value of the adjustable parameter, for scanning the object.

A sample comprising a first substance and a second substance is modified by breaking down molecular bonds of the second substance of the sample to form a modified sample having altered surface enhanced luminescence (SEL) characteristics to reduce overlapping of SEL characteristics of the first substance in the second substance. Surface enhanced luminescence data resulting from excitation of the modified sample is collected. Characteristics of the first substance based upon the collected surface enhanced luminescence data are identified.

Provided is an optical element rotation type Mueller-matrix ellipsometer for solving a problem of measurement accuracy and measurement precision occurring due to residual polarization of a light source, polarization dependence of a photo-detector, measurement values of Fourier coefficients of a high order term in dual optical element rotation type Mueller-matrix ellipsometers according to the related art capable of measuring some or all of components of a Mueller-matrix for any sample.

An optical scanning system adapted to scan a sample on a chip is provided. The optical scanning system includes at least one optical scanning head, at least one scanning light source, a light receiving device and a processor. Each of at least one optical scanning head includes a focusing light source, a first optical guiding structure, and a control unit. The first optical guiding structure is configured to guide the focusing light emitted from the focusing light source to travel to the sample, and the first optical guiding structure is configured to guide the at least one scanning light emitted from the at least one scanning light source to the sample to generate a secondary light. The control unit is configured to control the first optical guiding structure to keep the focusing light and at least one scanning light focusing on a surface of the chip. The light receiving device receives the secondary light and generates a scanning electronic signal. The processor is electrically coupled to the light receiving device to dispose the scanning electronic signal.

A device for measuring wafers includes an optical coherence tomograph, which generates a measuring light beam and directs it onto the wafer via an optical system. A scanning device deflects the measuring light beam in two spatial directions. A control unit controls the scanning device so that the measuring light beam scans the surface of the wafer successively at several measuring points. Two measuring points have a distance d.sub.max of 140 mmd.sub.max600 mm. An evaluation unit calculates distance values and/or thickness values from the interference signals provided by the optical coherence tomograph and, based on the distance values and/or thickness values, at least one characteristic quantity of the wafer such as TTV, warp or bow.

The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.

The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.

Described is a system for inducing and detecting multi-photon processes, in particular multi-photon fluorescence or higher harmonic generation in a sample. The system comprises a dynamically-controllable light source, said dynamically-controllable light source comprising a first sub-light source, said first sub-light source being electrically controllable such as to generate controllable time-dependent intensity patterns of light having a first wavelength, and at least one optical amplifier, thereby allowing for active time-control of creation of multi-photon-excitation. The system further comprises a beam delivery unit for delivering light generated by said dynamically-controllable light source to a sample site, and a detector unit or detector assembly for detecting signals indicative of said multi-photon process, in particular multi-photon fluorescence signals or higher harmonics signals.

Methods and systems for selecting one or more modes of an inspection subsystem or system for inspection of a specimen are provided. The systems described herein are configured to acquire output for all of the modes to be considered at a location of a known defect on the specimen by aligning output, which is generated at the location with a mode known to generate output in which patterned features on the specimen are resolved to a degree that allows the output to be aligned to design data, with the design data for the specimen to identify the location with substantially high accuracy and then without moving the field of view of the inspection subsystem or system from that location, acquiring the output for all other modes. All of the acquired output can then be used to select mode(s) for inspection of the specimen or another specimen of the same type.