An apparatus for measuring a semiconductor device includes a beam irradiating unit configured to irradiate a first beam to a semiconductor substrate, a stage configured to receive the semiconductor substrate thereon and which is configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate, by a first angle to the horizontal plane and a second angle that is different from the first angle, a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle, and an arithmetic operation unit configured to generate a 3D image of the semiconductor substrate using the second beam and the third beam received by the detector.

A vehicle based method of determining the extent to which a target object is a single scatterer, said vehicle including a radar system including a radar transmit element, adapted to send a radar signal towards said target object, and an antenna receive element adapted to receive radars signals reflected from said target object, said method comprising: a) transmitting a radar signal from said radar transmit element to said target object; b) receiving the reflected signal of the signal transmitted in step a) from the target object at said receiver element; c) processing the received signal to provide phase data in the frequency domain; d) determining a measure of the phase change between frequencies; e) determining whether the target object is a single scatterer based on the results of step d).

A magnetic field sensing system may include a first magnetic field sensing element; a second magnetic field sensing element; means for generating a first magnetic field having a first non-zero frequency; means for generating a second magnetic field having a second frequency; a conductive target positioned to generate a reflected magnetic field in response to the first magnetic field; means for producing a first signal representing the first magnetic field and the reflected magnetic field during a first alternating time period; means for producing a second signal representing the second magnetic field during a second alternating time period; means for calculating an error value as a function of the first and second signals, wherein the error value is based, at least in part, on the second signal during the first time period; and means for applying the error value to the first signal during the first alternating time period.

Systems and methods are provided for detecting gaps in composite parts. One method includes radiating a beam of x-rays in a firing direction towards surface of a multi-layer Carbon Fiber Reinforced Polymer (CFRP) part, acquiring data indicating intensity of sidescatter radiation received at an x-ray detector that extends along the CFRP part in the firing direction, and examining the acquired data for gaps at the CFRP part based on differences in intensity indicated by the data.

A method of measuring properties of a thin film stack by GIXR divides the stack into sub-layers and represents the composition of each sub-layer by an number P. The numbers P represent the composition of each layer. For example, integers may represent pure material and fractional values represent mixtures of the adjacent pure materials. This representation is then used to fit to measured data and the best fit gives an indication of the material composition of each of the sub-layers and hence as a function of depth.

An inspection apparatus for inspecting an inspection target surface arranged on an inspection plane, includes an X-ray generation tube having a target including an X-ray generation portion that generates X-rays by irradiation with an electron beam, and configured to emit X-rays to the inspection plane, and an X-ray detector configured to detect X-rays emitted from a foreign substance existing on the inspection target surface irradiated with the X-rays from the X-ray generation portion and totally reflected by the inspection target surface. The X-ray detector includes a long X-ray receiver.

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

The particle beam analyzer includes: an uncertainty level evaluation unit that calculates an optimization target position constituting a spatial position specified on the basis of a variation in spatial density distribution for each spatial position with respect to a plurality of spatial density distributions corresponding to the profile selected by the profile selection unit; a differential regression analysis unit that calculates, using regression analysis, a function for obtaining, from the spatial density distribution, a difference from the input profile by using the data held in the profile database and the difference calculated by the profile difference evaluation unit; and a spatial density distribution optimization unit that calculates a spatial density distribution for which the difference of the function calculated by the differential regression analysis unit is minimized, by using, as a variable, only the spatial density in the optimization target position calculated by the uncertainty level evaluation unit.

An apparatus for measuring a semiconductor device includes a beam irradiating unit configured to irradiate a first beam to a semiconductor substrate, a stage configured to receive the semiconductor substrate thereon and which is configured to rotate toward a central axis, which is perpendicular to a horizontal plane lying in the same plane with the semiconductor substrate, by a first angle to the horizontal plane and a second angle that is different from the first angle, a detector configured to receive a second beam generated by reflecting the first beam to the semiconductor substrate at the first angle and to receive a third beam generated by reflecting the first beam to the semiconductor substrate at the second angle, and an arithmetic operation unit configured to generate a 3D image of the semiconductor substrate using the second beam and the third beam received by the detector.