The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.

The present invention relates to a method for determining at least one parameter related to charged particles emitted from a particle emitting sample, e.g. a parameter related to the energies, the start directions, the start positions or the spin of the particles. The method comprises the steps of guiding a beam of charged particles into an entrance of a measurement region by means of a lens system, and detecting positions of the particles indicative of said at least one parameter within the measurement region. Furthermore, the method comprises the steps of deflecting the particle beam at least twice in the same coordinate direction before entrance of the particle beam into the measurement region. Thereby, both the position and the direction of the particle beam at the entrance of the measurement region can be controlled in a way that to some extent eliminates the need for physical manipulation of the sample. This in turn allows the sample to be efficiently cooled such that the energy resolution in energy measurements can be improved.

The present invention relates to a method for determining at least one parameter related to charged particles emitted from a particle emitting sample, e.g. a parameter related to the energies, the start directions, the start positions or the spin of the particles. The method comprises the steps of guiding a beam of charged particles into an entrance of a measurement region by means of a lens system, and detecting positions of the particles indicative of said at least one parameter within the measurement region. Furthermore, the method comprises the steps of deflecting the particle beam at least twice in the same coordinate direction before entrance of the particle beam into the measurement region. Thereby, both the position and the direction of the particle beam at the entrance of the measurement region can be controlled in a way that to some extent eliminates the need for physical manipulation of the sample. This in turn allows the sample to be efficiently cooled such that the energy resolution in energy measurements can be improved.

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

A method for measuring an element concentration of a material includes: a material sample is irradiated with first electromagnetic waves; second electromagnetic waves radiated by the material sample are obtained under the action of the first electromagnetic waves; material property parameters of the material sample are determined by detecting the second electromagnetic waves; and an element concentration of the material sample is determined according to the material property parameters.

In a ceramic substrate according to an embodiment, there are two or more peaks within a range of 98 eV or higher and 106 eV or lower in a spectrum obtained by measuring a laser-irradiated zone on a laser-processed surface by X-ray Photoelectron Spectroscopy (XPS). A ceramic circuit board and a semiconductor device including the ceramic substrate are provided. Methods for manufacturing the ceramic substrate and a ceramic split substrate are also provided.