Crystallographic information of crystalline sample can be determined from one or more three-dimensional diffraction pattern datasets generated based on diffraction patterns collected from multiple crystals. The crystals for diffraction pattern acquisition may be selected based on a sample image. At a location of each selected crystal, multiple diffraction patterns of the crystal are acquired at different angles of incidence by tilting the electron beam, wherein the sample is not rotated while the electron beam is directed at the selected crystal.

A method for inspecting a sample with a multi-electron beam inspection system (100) is described. The method includes: placing the sample on a movable stage (110) extending in an X-Y-plane; generating a plurality of electron beams (105) propagating toward the sample; focusing the plurality of electron beams on the sample at a plurality of probe positions (106) in a two-dimensional array; scanning the sample surface by moving the movable stage in a predetermined scanning pattern while maintaining the plurality of electron beams stationary; and detecting signal electrons emitted from the sample during the movement of the movable stage for inspecting the sample. Further, a multi-electron beam inspection system (100) for inspecting a sample according to the above method is described.

Systems and methods for interpreting high-energy interactions on a sample are described in this application. In particular, this application describes analysis systems and methods, comprising impinging radiation from a source on an analyte, detecting energy interactions resulting from the impinging radiation using a detector, adjusting a signal emitted from the radiation detector using a pre-processing method to emphasize specific features of that signal, using a machine learning module to interpret specific parts of the adjusted signal, producing a quantitative and/or qualitative model using the machine leaning module, and applying the quantitative and/or qualitative model to a separate energy interaction. The quantitative and qualitative models derived from this training can be applied to new detector inputs from the same or similar instruments. Other embodiments are described.

The system for in-situ real-time measurements of microstructure properties of 3D-printing objects during 3-D printing processes. An intensive parallel X-ray beam (with an adjustable beam size) impinges on a printing object and is diffracted on a crystal lattice of the printing material. The diffracted radiation impinges on a reflector formed with an array of reflector crystals mounted on an arcuated substrate. The diffracted beams reflected from the reflector crystals correspond to the diffraction intensity peaks produced by interaction of the crystal lattice of the printing material with the impinging X-ray beam. The intensities of the diffraction peaks are observed by detectors which produce corresponding output signals, which are processed to provide critical information on the crystal phase composition, which is closely related to the defects and performance of the printing objects. The subject in-situ technology provides an effective and efficient way to monitor, in real-time, the quality of 3D-printing parts during the 3-D printing process, with a significant potential for effective process control based on the reliable microstructure feedback.

A sequential X-ray fluorescence spectrometer according to the present invention includes a total analysis time display unit configured to measure, for each kind of analytical sample, a standard sample which contains a component at a known content as a standard value to determine a measured intensity of each measurement line corresponding to the component. The total analysis time display unit is further configured to calculate, for each component, a counting time which gives a specified analytical precision by using the standard value and the measured intensity and to calculate a total counting time as a sum of the counting times of respective components. The total analysis time display unit is configured to calculate a total analysis time as a sum of the total counting time and a total non-counting time and to output the calculated total analysis time and the calculated counting times of the respective components.

The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.

An X-ray thin film inspection device according to the present invention has an X-ray irradiation unit 40 mounted in a first rotation arm 32, an X-ray detector 50 mounted in a second rotation arm 33, a fluorescence x-ray detector 60 for detecting fluorescent X-ray occurring from an inspection target due to irradiation of X-ray, a temperature measuring unit 110 for measuring the temperature corresponding to the temperature of the X-ray thin film inspection device, and a temperature correcting system (central processing unit 100) for correcting an inspection position on the basis of the temperature measured by the temperature measuring unit 110.

A fluorescent X-ray analyzer includes a sample stage, an X-ray source that irradiates a sample with primary X-rays, a detector that detects secondary X-rays generated from the sample, a position adjustment mechanism that adjusts relative positions of the sample stage and the primary X-rays, an observation mechanism that obtains an observation image of the sample, and a computer having a display unit and an input unit. The computer has a function of, in response to a pointer being moved from a central region of the observation screen to a certain position by dragging the input unit while maintaining a state in which an input element of the input unit is held, moving the sample stage in a movement direction and at a movement speed corresponding to a direction and a distance of the certain position relative to the central region.

A measurement processing device used for an x-ray inspection apparatus that detects an x-ray passing through a specimen with a detection unit to sequentially inspect a plurality of specimens on the basis of an acquired transmission image, includes a setting unit that sets a region to be inspected on a portion of the specimen; a determination unit that determines the non-defectiveness of the region to be inspected by using a transmission image of the x-ray that passed through the region to be inspected; a correction unit that performs a correction on the region to be inspected on the basis of a determination result by the determination unit; and a display control unit that displays the corrected region to be inspected corrected by the correction unit.

The present disclosure relates to a time-gated fast neutron transmission radiography system and method. The system makes use of a pulsed neutron source for producing neutrons in a plurality of directions, with at least a subplurality of the neutrons being directed at an object to be imaged. The system also includes a neutron detector system configured to time-gate the detection of neutrons emitted from the pulsed neutron source to within a time-gated window.