Patent classifications
G01N2223/605
Phase Analyzer, Sample Analyzer, and Analysis Method
A phase analyzer includes a data acquisition unit that acquires spectrum imaging data in which a position on a sample is associated with a spectrum of a signal from the sample; a candidate determination unit that performs multivariate analysis on the spectrum imaging data to determine candidates for the number of phases; a phase analysis unit that creates, for each of the candidates, a phase map group including a number of phase maps corresponding to the number of phases; and a display control unit that causes a display unit to display, for each of the candidates, the phase map group.
Apparatuses and methods for combined simultaneous analyses of materials
An analysis apparatus comprises: a moveable stage assembly; a sample holder on a top surface of the stage assembly; a first photon source and a first photon detector or detector array, the first photon source being configured to emit a first beam of photons that intercepts the surface of a sample at a first location on the sample and the first photon detector or detector array being configured to detect photons that are emitted from the first location; and a second photon source and a second photon detector or detector array, the second photon source being configured to emit a second beam of photons that intercepts the surface of the sample at a second location on the sample, the second location being spaced apart from the first location, and the second photon detector or detector array being configured to detect photons that are emitted from the second location.
Device and method for measuring total cross-sectional phase fraction of multiphase flow based on ray coincidence measurement
A device for measuring a total cross-sectional phase fraction of a multiphase flow includes a scintillation crystal and a detector. The scintillation crystal is coupled to the detector; and the scintillation crystal includes lutetium-176.
Methods and systems for acquiring three-dimensional electron diffraction data
Crystallographic information of crystalline sample can be determined from one or more three-dimensional diffraction pattern datasets generated based on diffraction patterns collected from multiple crystals. The crystals for diffraction pattern acquisition may be selected based on a sample image. At a location of each selected crystal, multiple diffraction patterns of the crystal are acquired at different angles of incidence by tilting the electron beam, wherein the sample is not rotated while the electron beam is directed at the selected crystal.
METHOD FOR IMPROVING AN EBSD/TKD MAP
A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.
Analyzer and Image Processing Method
In an analyzer, an image processing unit performs processing of: dividing a measurement image into a plurality of partial measurement images, and dividing a reference image into a plurality of partial reference images; calculating a positional deviation amount of each of the partial measurement images relative to a corresponding partial reference image among the partial reference images; determining whether the positional deviation amount is a threshold or less; and correcting positional deviation of the measurement image based on the positional deviation amounts of the plurality of partial measurement images when the image processing unit has determined that the positional deviation amount is not the threshold or less.
Analysis apparatus, analysis method and analysis program
An analysis apparatus, an analysis method, and an analysis program by which even unskilled ones can perform quantitative analysis of a composition of high-performance cement with high precision. An analysis apparatus 100 for performing quantitative analysis of components of cement, includes: a content percentage conversion unit 120 for converting content percentages of major elements of a cement sample to content ratios of main crystal phases composing the cement sample by predetermined formulae, the content percentages being obtained as an elemental analysis result; a scale factor estimation unit 140 for estimating initial values of scale factors of Rietveld analysis from the content ratios of main crystal phases obtained in the conversion; and a Rietveld analysis unit 150 for performing Rietveld analysis with respect to an X-ray diffraction measurement result of the cement sample using the initial values of scale factors previously been estimated to calculate content percentages of respective phases of the cement sample.
DIFFRACTION DEVICE AND METHOD FOR NON-DESTRUCTIVE TESTING OF INTERNAL CRYSTAL ORIENTATION UNIFORMITY OF WORKPIECE
A diffraction device and a method for non-destructive testing of internal crystal orientation uniformity of a workpiece. The diffraction device comprises: an X-ray irradiation system used for irradiating X-ray to a measuring part of a measured sample (4); an X-ray detection system used for detecting a plurality of diffraction X-rays formed by diffracting the X-ray with a plurality of parts of the measured sample (4), to measure X-ray diffraction intensity distribution of the measured sample (4). The detected X-ray is short-wavelength feature X-ray, and the X-ray detection system is an array detection system (5). The method comprises steps of selecting the short-wavelength feature X-ray, performing texture analysis on the measured sample (4), and determining a diffraction vector Q to be measured; and obtaining the X-ray diffraction intensity of the corresponding part of the measured sample (4). The method can rapidly and non-destructively test the internal crystal orientation uniformity of a centimeter-thick workpiece in its entire thickness direction, and implement online testing and characterization of the internal crystal orientation uniformity of the centimeter-thick workpiece in the entire thickness direction of its movement trajectory.
Method for improving transmission Kikuchi diffraction pattern
The present invention refers to a method for improving a Transmission Kikuchi Diffraction, TKD pattern, wherein the method comprises the steps of: Detecting a TKD pattern (20b) of a sample (12) in an electron microscope (60) comprising at least one active electron lens (61) focusing an electron beam (80) in z-direction on a sample (12) positioned in distance D below the electron lens (61), the detected TKD (20b) pattern comprising a plurality of image points x.sub.D, y.sub.D and mapping each of the detected image points x.sub.D, y.sub.D to an image point of an improved TKD pattern (20a) with the coordinates x.sub.0, y.sub.0 by using and inverting generalized terms of the form x.sub.D=γ*A+(1−γ)*B and y.sub.D=γ*C+(1−γ)*D wherein
with Z being an extension in the z-direction of a cylindrically symmetric magnetic field B.sub.Z of the electron lens (61), and wherein A, B, C, D are trigonometric expressions depending on the coordinates x.sub.0, y.sub.0, with B and D defining a rotation around a symmetry axis of the magnetic field B.sub.Z, and with A and C defining a combined rotation and contraction operation with respect to the symmetry axis of the magnetic field B.sub.Z. The invention further relates to a measurement system, computer program and computer-readable medium for carrying out the method of the invention.
DEVICE AND METHOD FOR MEASURING TOTAL CROSS-SECTIONAL PHASE FRACTION OF MULTIPHASE FLOW BASED ON RAY COINCIDENCE MEASUREMENT
A device for measuring a total cross-sectional phase fraction of a multiphase flow includes a scintillation crystal and a detector. The scintillation crystal is coupled to the detector; and the scintillation crystal includes lutetium-176.