An analysis method using an X-ray fluorescence analyzer is provided in which an X-ray spectrum is acquired by detecting a secondary X-ray emitted from a specimen when the specimen is irradiated with a primary X-ray. The analysis method includes: acquiring a first X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a first take-off angle; acquiring a second X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a second take-off angle that is different from the first take-off angle; and obtaining information on an element in a depth direction of a specimen based on the first X-ray spectrum and the second X-ray spectrum.

The present invention relates to a battery module comprising a particulate metal-dispersed thermal conductive resin, and a method and a system for inspecting same. The present invention can effectively inspect the degree of dispersion in the resin in a nondestructive manner and can detect a defect.

A system includes a top scanner head configured over a coated substrate. An x-ray sensor and a second x-ray sensor scan the coated substrate. At least one of the x-ray sensor and second x-ray sensor is tuned to an energy level below an absorption peak and at least one of the x-ray sensor and second x-ray sensor is tuned to an energy level above the absorption peak. The x-ray sensor and second x-ray sensor scan a same sheet spot on the coated substrate. A bottom scanner head is configured underneath the coated substrate to provide a location for a detection of x-rays for the x-ray sensor and the second x-ray sensor.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

An X-ray diffractometer for obtaining X-ray diffraction angles of diffracted X-rays by detecting with an X-ray detector diffracted X-rays diffracted at a sample when X-rays are emitted at the sample at each angle of the angles about a center point of goniometer circles, the X-ray diffractometer having a pinhole member provided with a pinhole, the pinhole allowing X-rays diffracted from the sample to pass so that the diffracted X-rays pass through the center point of the goniometer circle, and other diffracted X-rays are shielded by the pinhole member.

According to an aspect of the present invention, provided is an information processing apparatus comprising a memory configured to store a program; and a processor configured to execute a program so as to output a parameter result in relation to a thin film by inputting a profile result in relation to an intensity of X-ray from the thin film to a neural network, wherein the neural network is a neural network that is allowed to machine-learn teacher data using profile data in relation to an intensity of X-ray from a thin film as input data and using parameter data in relation to the thin film as output data.

According to an aspect of the present invention, provided is an information processing apparatus, comprising: a processor configured to execute a program so as to output a diagnostic result diagnosing an analysis profile result by inputting an input profile result in relation to an intensity of X-ray from a thin film and the analysis result of the input profile result to a neural network, wherein the neural network is a neural network that is allowed to machine-learn teacher data using input profile data in relation to an intensity of X-ray from a thin film and analysis profile data obtained from the input profile data as input data, and using diagnostic data obtained by diagnosing the analysis profile data as output data.

An X-ray fluorescence analyzer includes a sample stage, a sample moving mechanism, an X-ray source, a detector detecting a fluorescent X-ray generated from the sample irradiated with a primary X-ray, an imaging device imaging the sample, a display device displaying the image on a screen, a pointing device designating a specific position on the screen for allowing an input at the specific position, an image processing device displaying a mark at the input position on the screen by the pointing device and a control device controlling the sample moving mechanism and the image processing device and, when the sample stage is moved, controlling the image processing device to display the mark on the screen with moving the mark in the same moving direction as that of the sample stage by the same moving distance.

Provided are operation guide system for X-ray analysis to enable users to easily understand measurement of X-ray optical system to be selected. The operation guide system includes: measurement information acquisition unit for acquiring information on a sample and each X-ray measurement optical system part; sample magnification acquisition unit for acquiring magnification for display; incident X-ray shape deformation unit for determining distorted shape of an incident X-ray obtained by magnifying shape of the incident X-ray based on the magnification in a plane perpendicular to an optical axis direction; scattered X-ray shape deformation unit for determining distorted shape of a scattered X-ray obtained by magnifying shape of the scattered X-ray based on the magnification in the plane; and X-ray measurement optical system modeling unit for modeling a deformed shape of the sample, the distorted shape of the incident X-ray, and the distorted shape of the scattered X-ray.

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).