In accordance with some embodiments of the present disclosure, systems and methods for determining the leaching profile of cutter on a drilling tool are disclosed. The method includes applying an X-ray impermeable layer to a surface of a leached PCD element with residual infiltrant. The method also includes moving the element through an X-ray beam. The method further includes detecting an X-ray intensity received by an X-ray detector. The method further includes generating a leaching profile of the leached PCD element based on the X-ray intensity.

An X-ray thin film inspection device according to the present invention has an X-ray irradiation unit 40 mounted in a first rotation arm 32, an X-ray detector 50 mounted in a second rotation arm 33, a fluorescence x-ray detector 60 for detecting fluorescent X-ray occurring from an inspection target due to irradiation of X-ray, a temperature measuring unit 110 for measuring the temperature corresponding to the temperature of the X-ray thin film inspection device, and a temperature correcting system (central processing unit 100) for correcting an inspection position on the basis of the temperature measured by the temperature measuring unit 110.

An X-ray thin film inspection device of the present invention includes an X-ray irradiation unit 40 installed on a first rotation arm 32, an X-ray detector 50 installed on a second rotation arm 33, and a fluorescence X-ray detector 60 for detecting fluorescence X-rays generated from an inspection target upon irradiation of X-rays. The X-ray irradiation unit 40 includes an X-ray optical element 43 comprising a confocal mirror for receiving X-rays radiated from an X-ray tube 42, reflects plural focused X-ray beams monochromatized at a specific wavelength and focuses the plural focused X-ray beams to a preset focal point, and a slit mechanism 46 for passing therethrough any number of focused X-ray beams out of the plural focused X-ray beams reflected from the X-ray optical element 43.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

The present invention relates to a method of analyzing strain of a thin film by using a Strain Tensor Using Computational Fourier Transform Moiré (STC) method, and the method includes: receiving two Bragg peaks selected from a reciprocal lattice image obtained by Fourier transforming a two-dimensional (2D) lattice image of a thin film; shifting the two received Bragg peaks to an origin point of the reciprocal lattice image; calculating a moiré fringe pattern by Fourier-inverse-transforming the two Bragg peaks shifted to the origin point; calculating a strain tensor by differentiating the calculated moiré fringe pattern; and analyzing strain of the thin film by using the calculated strain tensor. The present invention, it is possible to obtain a considerably accurate strain analysis result with minimal errors even in the case where strain of a thin film is complex, and measure shear strain, as well as axial strain, of a thin film.

The invention relates to a highly aligned and closely packed electrospun fiber assembly, wherein the fibers have at least an extension part or pore on the surface thereof. The invention also relates to a microtube array membrane (MTAM), comprising fiber assembly of the present disclosure. The invention also relates to the applications of these electrospun fiber assemblies in biological applications, and method of manufacturing these electrospun fiber assemblies.

Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

This fluorescent X-ray analysis apparatus is provided with an X-ray irradiation unit 20 for irradiating a sample S with: X-rays, having an energy that exceeds the energy absorption edge value of Ag which is selected as a measurement target element, and that is no greater than the energy absorption edge value of Sn which is an adjacent element having a higher energy absorption edge value than Ag; and X-rays having an energy exceeding the energy absorption edge value of Sn which is selected as a measurement target element.

A method for analyzing the quality of a thin layer surface of PCB includes steps of taking a region to be tested from the PCB as a sample by scissors or an automatic sampler; performing gold spraying treatment; fixing a sample to be tested onto a metal sample platform, and then mounting the sample platform on the inclined surface of a test platform; depositing a first protective layer by an electron beam; after deposition with the electron beam is completed, depositing a second protective layer by a focused ion beam; adjusting the angle of inclination of the test platform to ensure that the surface of the sample can be cut perpendicular to the direction of the focused ion beam; and finally adjusting angle of inclination of the sample to perform observation. The method can avoid influences of chemical solutions, mechanical stress, and impurity contamination in the sample preparation process.

Aspects of the disclosure are directed to an analysis of a material of a component. A radiation source is activated to transmit radiation to the component. A beam pattern is obtained based on the component interfering with the radiation. The beam pattern is compared to a reference beam pattern. An anomaly is detected to exist in the material when the comparison indicates a deviation between the beam pattern and the reference beam pattern.