There is provided a control apparatus 40 that controls a tilt of a sample, the control apparatus comprising an input section 41 that receives an input of inclination information representing inclination of the sample with respect to a ϕ axis; an adjustment amount determination section 43 that determines adjustment amounts of a ω value and a χ value for correcting a deviation amount between a scattering vector and a normal line to a sample surface or a lattice plane with respect to a ϕ value that varies, using the inclination information; and a drive instruction section 47 that drives a goniometer according to ϕ axis rotation of the sample, based on the determined adjustment amounts of the ω value and the χ value, during an X-ray diffraction measurement.

An X-ray fluorescence spectrometer of the present invention includes: a determination module (21) configured to determine, with respect to every one of measurement lines that correspond to secondary X-rays having intensities to be measured, whether or not a ratio of a theoretical intensity in thin film calculated on the basis of an assumed thickness and known contents of respective components to a theoretical intensity in bulk calculated on the basis of the known contents of the respective components exceeds a predetermined threshold; and a saturation thickness quantification module (23) configured to, according to a positive determination by the determination module (21), calculate a saturation thickness with respect to each of the measurement lines, at which the theoretical intensity saturates, on the basis of the known contents of the respective components and to adopt a largest saturation thickness as a quantitative value of a thickness.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.

A method of quantifying an antimicrobial coatings using a handheld XRF analyzer is disclosed. The method provides an estimate of the expected level of antimicrobial efficacy for a thin film comprising silicon and/or titanium by obtaining a .sub.14Si or .sub.22Ti peak intensity using XRF spectroscopy and converting the obtained .sub.14Si or .sub.22Ti peak intensity to the expected level of efficacy using a calibration curve. A properly calibrated handheld XRF analyzer allows a user to assess the viability of antimicrobial coatings in the field, such as in a hospital where various fomites may be coated with silane and/or titanium compositions.

A method includes obtaining sensor data associated with a deposition process performed in a process chamber to deposit a film stack on a surface of a substrate, wherein the film stack comprises a plurality of layers of a first material and a plurality of layers of a second material. The method further includes obtaining metrology data associated with the film stack. The method further includes training a first machine-learning model based on the sensor data and the metrology data, wherein the first machine-learning model is trained to generate predictive metrology data associated with layers of the first material. The method further includes training a second machine-learning model based on the sensor data and the metrology data, wherein the second machine-learning model is trained to generate predictive metrology data associated with layers of the second material.

The present invention provides a method of inspecting a surface including detecting a presence or absence of a defect derived from a surface irregularity part of a planar inspection object to be conveyed in a predetermined direction, using a change in intensity of inspection light, the inspection light including at least two inspection lights that are parallel to a surface of the inspection object in a side view of the inspection object and pass over the surface of the inspection object or through the inspection object in a direction intersecting the conveyance direction in a plan view of the inspection object, the two inspection lights being non-parallel to each other in the plan view.

The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.