A method of characterizing a part including obtaining an X-ray tomography image of the part and then a step of correlating the image with a reference wherein the correlation step includes searching among a predefined set of X-ray tomography image transformations for a transformation that minimizes the difference between the image and the reference in order to characterize the inside of the part.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.

Provided are X-ray and metal detectable thermoset composites and methods of detecting the same. The present X-ray and metal detectable thermoset composites may be formed into trays, sheets, or other substrates suitable for use in food or pharmaceutical processing or manufacturing.

An X-ray inspection device of the present invention includes a sample placement unit 11 for placing a sample as an inspection target therein, a sample placement unit positioning mechanism 30 for moving the sample placement unit 11, a goniometer 20 including first and second rotation members 22, 23 that rotate independently of each other, an X-ray irradiation unit 40 installed on the first rotation member 22, and a two-dimensional X-ray detector 50 installed on the second rotation member 23. The sample placement unit positioning mechanism 30 includes a rotation mechanism 35 for rotating the sample placement unit 11 and a -axis about a -axis that is orthogonal to a s-axis and a d-axis at a measurement point P and extends horizontally.

A method that measures stress of a test subject including a metal includes: detecting, using a two-dimensional detector, a diffraction ring of diffracted X-rays which is formed by causing X-rays from an irradiation unit to be incident on the test subject and to be diffracted by the test subject; and calculating the stress of the test subject based on detection results during the detection step. Therein, the detection step involves causing X-rays from the irradiation unit to be incident on each of a plurality of sites on the test subject with the irradiation unit angled relative to the test subject in a manner such that the angle of incidence on the test subject is within the range of 5-20, inclusive, and detecting, using a two-dimensional detector, the diffraction ring formed by the diffraction of the X-rays by the test subject.

Methods and systems for measuring structural and material characteristics of semiconductor structures based on wavelength resolved, soft x-ray reflectometry (WR-SXR) at multiple diffraction orders are presented. WR-SXR measurements are simultaneous, high throughput measurements over multiple diffraction orders with broad spectral width. The availability of wavelength resolved signal information at each of the multiple diffraction orders improves measurement accuracy and throughput. Each non-zero diffraction order includes multiple measurement points, each different measurement point associated with a different wavelength. In some embodiments, WR-SXR measurements are performed with x-ray radiation energy in a range of 10-5,000 electron volts at grazing angles of incidence in a range of 1-45 degrees. In some embodiments, the illumination beam is controlled to have relatively high divergence in one direction and relatively low divergence in a second direction, orthogonal to the first direction. In some embodiments, multiple detectors are employed, each detecting different diffraction orders.

An X-ray collimator (30) that comprises: a collimator body (31) comprising: a collimation conduit (32) provided with an inlet (320), configured to be connected to an X-ray source (20) for the inlet of a beam (B) of X-rays, and an outlet (321), configured to emit a collimated portion (B1) of the X-ray beam (B); and a derivation conduit (33) inclined with respect to the collimation conduit (32), wherein the derivation conduit (33) is provided with an inlet (330), configured to be connected to the X-ray source (20) for the inlet of a peripheral portion (B2) of the same X-ray beam (B) emitted by the source (20), and an outlet (331); a reference detector (40) fixed to the collimator body (31) and provided with an inlet window (41) facing the outlet (331) of the derivation conduit (33).

The present disclosure relates to a method for detecting a fibre misalignment in an elongated structure, such as a wind turbine blade component. The elongated structure has a length along a longitudinal direction and comprises a plurality of stacked reinforcing fibre layers. The plurality of fibre layers comprises fibres having an orientation aligned, unidirectionally, substantially in the longitudinal direction. The method comprises scanning a surface of the elongated structure for identifying one or more surface irregularities, selecting one or more regions of interest comprising said one or more surface irregularities, examining said region of interest using penetrating radiation, and determining a position and/or size of the fibre misalignment based on said examining step.

The application concerns a method of authenticating an object, the object comprising an identification substance including at least one amorphous phase, at least one crystalline phase and at least one complex metallic phase. The method includes the steps of: subjecting the identification substance of a candidate object to XRD analysis to determine an XRD signature thereof; comparing the XRD signature of the candidate object to a reference XRD signature, and concluding to the authenticity of the object when its XRD signature substantially matches the reference XRD signature.

The presently-disclosed technology improves the resolution of an x-ray microscope so as to obtain super-resolution x-ray images having resolutions beyond the maximum normal resolution of the x-ray microscope. Furthermore, the disclosed technology provides for the rapid generation of the super-resolution x-ray images and so enables real-time super-resolution x-ray imaging for purposes of defect detection, for example. A method of super-resolution x-ray imaging using a super-resolving patch classifier is provided. In addition, a method of training the super-resolving patch classifier is disclosed. Other embodiments, aspects and features are also disclosed.