A method of inspecting a foreign body in a film includes a first detecting process that detects a foreign body on a film with an optical imaging unit and obtaining foreign body information including at least positional plane coordinates information A on the film; a process of winding up the film on a core as the film roll after the first detecting process; a converting process of converting a position of the foreign body on the positional plane coordinates information A into positional information on positional space coordinates information B in the wound film roll; and a second detecting process of using a radiation imaging unit to the film roll, focusing the radiation imaging unit to adjust imaging focus on a targeted foreign body based on the positional space coordinates information B for the foreign body, and emitting radiation to detect and characterize the targeted foreign body.

Disclosed are apparatus and methods for inspecting a sample. Locations corresponding to candidate defect events on a sample are provided from an inspector operable to acquire optical images from which such candidate defect events are detected at their corresponding locations across the sample. High-resolution images are acquired from a high-resolution inspector of the candidate defect events at their corresponding locations on the sample. Each of a set of modelled optical images, which have been modeled from a set of the acquired high-resolution images, is correlated with corresponding ones of a set of the acquired optical images, to identify surface noise events, as shown in the set of high-resolution images, as sources for the corresponding candidate events in the set of acquired optical images. Otherwise, a subsurface event is identified as a likely source for a corresponding candidate defect event.

Disclosed are apparatus and methods for inspecting a semiconductor sample. Locations corresponding to candidate defect events on a semiconductor sample are provided from an optical inspector operable to acquire optical images from which such candidate defect events are detected at their corresponding locations across the sample. High-resolution images are acquired from a high-resolution inspector of the candidate defect events at their corresponding locations on the sample. Each of a set of modelled optical images, which have been modeled from a set of the acquired high-resolution images, is correlated with corresponding ones of a set of the acquired optical images, to identify surface noise events, as shown in the set of high-resolution images, as sources for the corresponding candidate events in the set of acquired optical images. Otherwise, a subsurface event is identified as a likely source for a corresponding candidate defect event.

For each respective first-phase rotational position of a set of first-phase rotational positions, an imaging system may generate a respective first-phase image. The imaging system may determine, based on an identified region of interest in the respective first-phase image, collimator blade positions for the respective first-phase rotational position. For each respective second-phase rotational position of a set of second-phase rotational positions, the imaging system may determine, based on the collimator blade positions for the first-phase rotational positions, collimator blade positions for the respective second-phase rotational position. The imaging system may generate a respective second-phase image in a second series of images while the test object is at the respective second-phase rotational position and while the collimator blades are at the collimator blade positions for the respective second-phase rotational position. The imaging system may compute, based on the second series of images, tomographic data for the portion of the test object.

The invention relates to a method for testing an electronic component for defects, by examining the electronic component in a production line by means of automatic optical inspection; determining the coordinates of regions in which an examination using automatic optical inspection is not possible; transmitting the coordinates of these regions from the production line to a computer; transporting the electronic component from the production line into an X-ray device which is arranged outside the production line, for non-destructive material testing; transmitting the coordinates of the regions from the computer to this X-ray device; examining the electronic component by means of the X-ray device only in the regions in which an examination using automatic optical inspection is not possible; transmitting the results of the examination in the X-ray device to the computer; returning the electronic component to the production line if the result indicates that it is not defective.

Disclosed are apparatus and methods for inspecting a semiconductor sample. Locations corresponding to candidate defect events on a semiconductor sample are provided from an optical inspector operable to acquire optical images from which such candidate defect events are detected at their corresponding locations across the sample. High-resolution images are acquired from a high-resolution inspector of the candidate defect events at their corresponding locations on the sample. Each of a set of modelled optical images, which have been modeled from a set of the acquired high-resolution images, is correlated with corresponding ones of a set of the acquired optical images, to identify surface noise events, as shown in the set of high-resolution images, as sources for the corresponding candidate events in the set of acquired optical images. Otherwise, a subsurface event is identified as a likely source for a corresponding candidate defect event.

There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.

A method, apparatus, and system for scanning an elongate structure. A scanner in a scanning system is moved axially along the elongate structure using a translating structure in the scanning system. The elongate structure is scanned axially using an x-ray beam emitted by the scanner as the scanner moves axially along the elongate structure to perform an axial scan. The x-ray beam has a first orientation. A location on the elongate structure having an inconsistency is detected while scanning the elongate structure axially. The elongate structure is scanned at the location with the x-ray beam in a second orientation.

A calculating unit for calculating a recording trajectory of a CT system has a receive interface, an optimizer and a control unit. The receive interface serves for receiving measurement and simulation data relative to the object to be recorded. The optimizer is configured to determine the recording trajectory based on known degrees of freedom of the CT system, based on the measurement and simulation data and based on a test task from a group having a plurality of test tasks. The control unit is configured to output data in correspondence with the recording trajectory for controlling the CT system.

A method for studying a zone of an object, the zone exhibiting a mass-thickness and comprising at least one chemical element, the method including a step of exposing a part of the zone of the object to an electron beam, a step of identifying each chemical element present in the said zone by virtue of the exposure step, a step of measuring, for each chemical element identified, a corresponding intensity of an X-ray radiation emergent from the object on account of the said exposure step, a step of determining a value of the said mass-thickness dependent on each measurement step, and a step of determining a value of the concentration of each chemical element identified using the said value of the mass-thickness determined.