In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

A method for determining a value of a local contact potential difference by noncontact atomic force microscopy. For one or more cantilever positions above a surface of a sample: i) determining two distinct voltage values of DC voltage applied between an oscillating cantilever and the sample, and ii) determining, by one or more processors, a value of a local contact potential difference based, at least in part, on the two distinct voltage values that were determined.

A method for determining a value of a local contact potential difference by noncontact atomic force microscopy. For one or more cantilever positions above a surface of a sample: i) determining two distinct voltage values of DC voltage applied between an oscillating cantilever and the sample, and ii) determining, by one or more processors, a value of a local contact potential difference based, at least in part, on the two distinct voltage values that were determined.

A method of compensating for an artifact in data collected using a standard atomic force microscope (AFM) operating in an oscillating mode. The artifact is caused by deflection of the probe not related to actual probe-sample interaction and the method includes compensating for thermal induced bending of the probe of the AFM by measuring a DC component of the measured deflection. The DC component of deflection is identified by calibrating the optical deflection detection apparatus and monitoring movement of the mean deflection, thereby allowing the preferred embodiments to minimize the adverse effect due to the artifact. Notably, plotting the DC deflection profile yields a corresponding temperature profile of the sample.

A method of compensating for an artifact in data collected using a standard atomic force microscope (AFM) operating in an oscillating mode. The artifact is caused by deflection of the probe not related to actual probe-sample interaction and the method includes compensating for thermal induced bending of the probe of the AFM by measuring a DC component of the measured deflection. The DC component of deflection is identified by calibrating the optical deflection detection apparatus and monitoring movement of the mean deflection, thereby allowing the preferred embodiments to minimize the adverse effect due to the artifact. Notably, plotting the DC deflection profile yields a corresponding temperature profile of the sample.

The present application relates to an apparatus for a scanning probe microscope, said apparatus having: (a) at least one first measuring probe having at least one first cantilever, the free end of which has a first measuring tip; (b) at least one first reflective area arranged in the region of the free end of the at least one first cantilever and embodied to reflect at least two light beams in different directions; and (c) at least two first interferometers embodied to use the at least two light beams reflected by the at least one first reflective area to determine the position of the first measuring tip.

A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

A method is disclosed. The method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information, determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, and analyzing the feature edge positions to detect the presence or absence of defects in the pattern structure.