The invention relates to a system suitable for its use in scanning probe microscopy, such as tip-enhanced Raman spectroscopy or magnetic force microscopy, that comprises: a tip (1) comprising an apex (1′); a plurality of nanoparticles (2, 2′) attached to the tip (1); having a size between 0.5 and 100 nm. Advantageously, the plurality of nanoparticles (2, 2′) comprises a cluster (2″) of one or more nanoparticles (2′) disposed at the apex (1′) of the tip (1), wherein the cluster (2″) is spaced from any other nanoparticle (2) of the tip (1) at least a distance d of 0.5 nm. The invention also relates to a method for obtaining such system through a controlled thermal treatment that exploits the intrinsic properties of nanoparticles.

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

A new monolithic Atomic Force Microscopy (AFM) active optical probe monolithically integrates a base of the probe, a cantilever, a semiconductor laser source, an AFM tip, and a photodetector into a robust, easy-to-use single semiconductor chip to enable AFM measurements, optical imaging, and optical spectroscopy at the nanoscale.

The present invention relates to a micro-optomechanical system (500) and to a method for the production thereof. The micro-optomechanical system (500) comprises at least one optical subsystem (100) configured for emitting at least one optical actuator signal (212) and for receiving at least one optical sensor signal (211); and at least one optomechanical structure (150) which is producible in direct contact with the optical subsystem (100) by means of a direct writing microstructuring method, wherein the optical subsystem (100) comprises at least one optical actuation element (219) and at least one optical sensor element (140), wherein the optical actuator signal (212) in interaction with the optical actuation element (219) is configured for changing a mechanical state of the optomechanical structure (150), and wherein the optical sensor signal (211) in interaction with the optical sensor element (140) is configured for detecting the change in the mechanical state of the optomechanical structure (150) or a variable related thereto.

The micro-optomechanical systems (500) provided have virtually any desired shaping in conjunction with very high resolution and are therefore suitable for a wide range of applications.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.

Infrared (IR) vibrational scattering scanning near-field optical microscopy (s-SNOM) has advanced to become a powerful nanoimaging and spectroscopy technique with applications ranging from biological to quantum materials. However, full spatiospectral s-SNOM continues to be challenged by long measurement times and drift during the acquisition of large associated datasets. Various embodiments provide for a novel approach of computational spatiospectral s-SNOM by transforming the basis from the stationary frame into the rotating frame of the IR carrier frequency. Some embodiments see acceleration of IR s-SNOM data collection by a factor of 10 or more in combination with prior knowledge of the electronic or vibrational resonances to be probed, the IR source excitation spectrum, and other general sample characteristics.

Infrared (IR) vibrational scattering scanning near-field optical microscopy (s-SNOM) has advanced to become a powerful nanoimaging and spectroscopy technique with applications ranging from biological to quantum materials. However, full spatiospectral s-SNOM continues to be challenged by long measurement times and drift during the acquisition of large associated datasets. Various embodiments provide for a novel approach of computational spatiospectral s-SNOM by transforming the basis from the stationary frame into the rotating frame of the IR carrier frequency. Some embodiments see acceleration of IR s-SNOM data collection by a factor of 10 or more in combination with prior knowledge of the electronic or vibrational resonances to be probed, the IR source excitation spectrum, and other general sample characteristics.

An exemplary apparatus can provide radiation to a sample(s), which can include, for example, a radiation source arrangement configured to provide radiation, a beam splitter configured to split the radiation into (i) a first radiation, and (ii) a second radiation. An optical element can also be provided which, in operation, can, e.g., (a) receive the first radiation and the second radiation, (b) reflect the first radiation as a reference radiation, (c) provide the second radiation as illumination for the sample(s), (d) receive a resultant radiation from the sample(s) that can be based on the illumination from the second radiation, and (e) provide the reference radiation and the resultant radiation to be detected and used for interferometric imaging or spectroscopy.