A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

The present disclosure relates to the technical field of microwave test, and discloses a method and a system for analyzing the spatial resolution of a microwave near-field probe and a microwave microscope equipped with the system, wherein in the method for analyzing the spatial resolution of the microwave near-field probe, a three-dimensional equipotential surface in a sample is drawn by using an electric field formula calculated by a quasi-static theory; an equivalent model of a probe sample is established by using finite element analysis software, so as to change material characteristics in the area outside the three-dimensional equipotential surface; by observing the influence of changing materials on the potential distribution in the sample, a near-field action range of the probe is determined, and the spatial resolution of the microwave near-field scanning microscope is analyzed and calculated.

The present disclosure relates to the technical field of microwave test, and discloses a method and a system for analyzing the spatial resolution of a microwave near-field probe and a microwave microscope equipped with the system, wherein in the method for analyzing the spatial resolution of the microwave near-field probe, a three-dimensional equipotential surface in a sample is drawn by using an electric field formula calculated by a quasi-static theory; an equivalent model of a probe sample is established by using finite element analysis software, so as to change material characteristics in the area outside the three-dimensional equipotential surface; by observing the influence of changing materials on the potential distribution in the sample, a near-field action range of the probe is determined, and the spatial resolution of the microwave near-field scanning microscope is analyzed and calculated.

The invention offers high resolution and accuracy for nanoscale temperature mapping. Instead of collecting light after emission in near-field that decays to far-field, the present invention directly couples the near-field waves to a polaritonic-coated infrared probe. The polaritonic coating can be formed on an IR-tuned optical fiber to receive the coupled IR radiation and form polaritons, including plasmons or phonons, using the IR polaritonic material. The IR polaritons propagate along the probe decay back into the fiber core without substantial losses to far-field and are transmitted to a detector, such as a spectroscope. The coupling of the near-field energy to emission detected through the tip apex of fiber can be expressed as emission spectra. Through mapping with other spatial points, multi-dimensional displays and other information can be provided. The resolution can be less than 100 nanometers, such as at least an order of magnitude less than 100 nanometers.

The invention offers high resolution and accuracy for nanoscale temperature mapping. Instead of collecting light after emission in near-field that decays to far-field, the present invention directly couples the near-field waves to a polaritonic-coated infrared probe. The polaritonic coating can be formed on an IR-tuned optical fiber to receive the coupled IR radiation and form polaritons, including plasmons or phonons, using the IR polaritonic material. The IR polaritons propagate along the probe decay back into the fiber core without substantial losses to far-field and are transmitted to a detector, such as a spectroscope. The coupling of the near-field energy to emission detected through the tip apex of fiber can be expressed as emission spectra. Through mapping with other spatial points, multi-dimensional displays and other information can be provided. The resolution can be less than 100 nanometers, such as at least an order of magnitude less than 100 nanometers.

This disclosure relates to a method for measuring an electric field in the near-field region of an optically excited sample. The method includes optically exciting at least part of the sample. This step includes directing excitation light onto an interface between the sample and a medium. The excitation light is incident onto the interface under an angle of incidence such that total internal reflection of the excitation light occurs at the interface. The method further includes measuring the electric field using a terahertz near-field probe, wherein the terahertz near-field probe is positioned on one side of the interface and the excitation light approaches the interface on another side of the interface. This disclosure further relates to a system and computer program for measuring an electric field in the near-field region of an optically excited sample.

This disclosure relates to a method for measuring an electric field in the near-field region of an optically excited sample. The method includes optically exciting at least part of the sample. This step includes directing excitation light onto an interface between the sample and a medium. The excitation light is incident onto the interface under an angle of incidence such that total internal reflection of the excitation light occurs at the interface. The method further includes measuring the electric field using a terahertz near-field probe, wherein the terahertz near-field probe is positioned on one side of the interface and the excitation light approaches the interface on another side of the interface. This disclosure further relates to a system and computer program for measuring an electric field in the near-field region of an optically excited sample.

The invention is directed to an arrangement for detecting the intensity distribution of components of the electromagnetic field in beams of radiation. The object of the invention is met, according to the invention, in that a high-resolution two-dimensional intensity sensor array and a field vector detector array comprising different regions with individual detector structures for two transverse and longitudinal field vector components E.sub.x, E.sub.y, E.sub.z are combined, wherein the detector structures are formed as nanostructures, metallic jacket-shaped tips with different apices, for utilization of localized plasmon resonance (LPR) of the individual detector structures and localized surface plasmons (LSP) excited through LPR for a polarization selection of the field distribution according to field vector components E.sub.x, E.sub.y, E.sub.z and transmission thereof to associated sensor elements by means of surface plasmon polaritons (SPP) and wave guiding (WGM).

The invention is directed to an arrangement for detecting the intensity distribution of components of the electromagnetic field in beams of radiation. The object of the invention is met, according to the invention, in that a high-resolution two-dimensional intensity sensor array and a field vector detector array comprising different regions with individual detector structures for two transverse and longitudinal field vector components E.sub.x, E.sub.y, E.sub.z are combined, wherein the detector structures are formed as nanostructures, metallic jacket-shaped tips with different apices, for utilization of localized plasmon resonance (LPR) of the individual detector structures and localized surface plasmons (LSP) excited through LPR for a polarization selection of the field distribution according to field vector components E.sub.x, E.sub.y, E.sub.z and transmission thereof to associated sensor elements by means of surface plasmon polaritons (SPP) and wave guiding (WGM).

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.