A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

The invention offers high resolution and accuracy for nanoscale device characterization from ultraviolet through microwave wavelengths. Instead of collecting light after emission in near-field that decays to far-field, the present invention directly couples the near-field waves to a polaritonic-coated probe. The polaritonic coating can be formed on an wavelength tuned optical fiber to receive the coupled emission and form polaritons, including plasmons, phonons, and magnons, using the polaritonic material. The polaritons propagate along the probe decay back into the fiber core without substantial losses to far-field and are transmitted to a detector, such as a spectroscope. The coupling of the near-field energy to emission detected through the tip apex of fiber can be expressed as emission spectra. Through mapping with other spatial points, multi-dimensional displays and other information can be provided. The resolution can be less than 100 nanometers, including an order of magnitude less than 100 nanometers.

The invention offers high resolution and accuracy for nanoscale device characterization from ultraviolet through microwave wavelengths. Instead of collecting light after emission in near-field that decays to far-field, the present invention directly couples the near-field waves to a polaritonic-coated probe. The polaritonic coating can be formed on an wavelength tuned optical fiber to receive the coupled emission and form polaritons, including plasmons, phonons, and magnons, using the polaritonic material. The polaritons propagate along the probe decay back into the fiber core without substantial losses to far-field and are transmitted to a detector, such as a spectroscope. The coupling of the near-field energy to emission detected through the tip apex of fiber can be expressed as emission spectra. Through mapping with other spatial points, multi-dimensional displays and other information can be provided. The resolution can be less than 100 nanometers, including an order of magnitude less than 100 nanometers.

Diffused reflection of a laser beam is prevented from adversely affecting the processing of an optical axis adjustment of the laser beam in a scanning probe microscope. In a case where a position of a spot of a laser beam identified based on an image captured by an imaging unit is moved in a direction predicted when the laser beam is moved, a control device of the scanning probe microscope sets a position of the identified spot as an initial position. The control device identifies the position that diffusely reflects the laser beam based on the image captured by the imaging unit and moves the spot from the initial position to the tip of the cantilever by avoiding the position that diffusely reflects the laser beam.

Diffused reflection of a laser beam is prevented from adversely affecting the processing of an optical axis adjustment of the laser beam in a scanning probe microscope. In a case where a position of a spot of a laser beam identified based on an image captured by an imaging unit is moved in a direction predicted when the laser beam is moved, a control device of the scanning probe microscope sets a position of the identified spot as an initial position. The control device identifies the position that diffusely reflects the laser beam based on the image captured by the imaging unit and moves the spot from the initial position to the tip of the cantilever by avoiding the position that diffusely reflects the laser beam.

A lighting device for total-internal-reflection fluorescence microscopy includes a substrate that is transparent to light, having a refractive index higher than that of water; a light-emitting device arranged in the interior of the substrate, suitable for emitting light radiation in the direction of a surface of the substrate, the light-emitting device being arranged such that at least one portion of the radiation reaches the surface with an angle of incidence larger than or equal to a critical angle of total internal reflection for an interface between the substrate and water; and at least one opaque mask, arranged in the interior or on the surface of the substrate so as to intercept a portion of the radiation that, in the absence of the mask, would reach the surface with an angle of incidence smaller than the critical angle. A lighting device to total-internal-reflection fluorescence microscopy is provided.

A lighting device for total-internal-reflection fluorescence microscopy includes a substrate that is transparent to light, having a refractive index higher than that of water; a light-emitting device arranged in the interior of the substrate, suitable for emitting light radiation in the direction of a surface of the substrate, the light-emitting device being arranged such that at least one portion of the radiation reaches the surface with an angle of incidence larger than or equal to a critical angle of total internal reflection for an interface between the substrate and water; and at least one opaque mask, arranged in the interior or on the surface of the substrate so as to intercept a portion of the radiation that, in the absence of the mask, would reach the surface with an angle of incidence smaller than the critical angle. A lighting device to total-internal-reflection fluorescence microscopy is provided.

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.