A multi-functional scanning probe microscopy nanoprobe may include a cantilever, a tapered structure formed on a surface of the cantilever from a first material, and a nanopillar formed on an apex of the tapered structure from a second material. One of the first and second materials may exhibit ferromagnetism and the other may have greater electrical conductivity. A method of simultaneous multi-mode operation during scanning probe microscopy may include scanning a sample with the nanoprobe in contact with the sample to produce a current measurement indicative of an electric current flowing through the sample and a height measurement indicative of a topography of the sample and, thereafter, scanning the sample with the nanoprobe oscillating about a lift height derived from the height measurement to produce a deflection measurement (e.g. phase shift) indicative of a magnetic force between the sample and the nanoprobe.

An atom probe directs two or more pulsed laser beams onto a specimen, with each laser beam being on a different side of the specimen, and with each laser beam supplying pulses at a time different from the other laser beams. The laser beams are preferably generated by splitting a single beam provided by a laser source. The laser beams are preferably successively aligned incident with the specimen by one or more beam steering mirrors, which may also scan each laser beam over the specimen to achieve a desired degree of specimen ionization.

An atom probe directs two or more pulsed laser beams onto a specimen, with each laser beam being on a different side of the specimen, and with each laser beam supplying pulses at a time different from the other laser beams. The laser beams are preferably generated by splitting a single beam provided by a laser source. The laser beams are preferably successively aligned incident with the specimen by one or more beam steering mirrors, which may also scan each laser beam over the specimen to achieve a desired degree of specimen ionization.

A nanoprober system can land a probe onto a device under test (DUT) by positioning a conductive probe above the DUT by a motion control device; applying electrical signals between the conductive probe and the DUT; measuring electrical responses from the applied electrical signal; calculating impedance magnitude values and / or phase angle values based on the measured electrical response values; causing the conductive probe to move towards the DUT while continuing to calculate impedance magnitude values and / or phase angle values from measured electrical response; determining that the conductive probe has contacted the DUT based on a change in the calculated impedance magnitude values and / or phase angle values; and signaling to the motion control device to stop moving the probe towards the DUT based on the change in the calculated impedance magnitude values and / or phase angle values.

The invention is directed at a method of performing scanning probe microscopy on a substrate surface using a scanning probe microscopy system. A probe tip and substrate surface are moved relative to each other in one or more directions parallel to the scanning plane to position the probe tip to a scanning position on the substrate surface with the probe tip; a displacement is measured by an encoder of said probe tip in said one or more directions; and a fiducial pattern is provided fixed relative to the substrate surface, said fiducial pattern having a scannable structure that is scannable by said probe tip and said structure forming a grid of fiducial marks in said one or more dimensions; said grid dimensioned to allow for measuring placement deviations of the probe tip relative to the probe head by identifying one or more fiducial marks in the fiducial pattern.

The invention is directed at a method of performing scanning probe microscopy on a substrate surface using a scanning probe microscopy system. A probe tip and substrate surface are moved relative to each other in one or more directions parallel to the scanning plane to position the probe tip to a scanning position on the substrate surface with the probe tip; a displacement is measured by an encoder of said probe tip in said one or more directions; and a fiducial pattern is provided fixed relative to the substrate surface, said fiducial pattern having a scannable structure that is scannable by said probe tip and said structure forming a grid of fiducial marks in said one or more dimensions; said grid dimensioned to allow for measuring placement deviations of the probe tip relative to the probe head by identifying one or more fiducial marks in the fiducial pattern.

Atomic force microscopy apparatus and method that enable observing charge generation transients with nanometer spatial resolution and nanosecond to picosecond time resolution, the timescale relevant for studying photo-generated charges in the world's highest efficiency photovoltaic films. The AFM apparatus includes an AFM, a light source for illumination of a sample operatively coupled to the AFM, a voltage source operatively coupled to the AFM, and a control circuitry operatively coupled to the light source and the voltage source. The AFM apparatus improves the time resolution and enables rapid acquisition of photocapacitance transients in a wide array of solar-energy-harvesting materials.

Atomic force microscopy apparatus and method that enable observing charge generation transients with nanometer spatial resolution and nanosecond to picosecond time resolution, the timescale relevant for studying photo-generated charges in the world's highest efficiency photovoltaic films. The AFM apparatus includes an AFM, a light source for illumination of a sample operatively coupled to the AFM, a voltage source operatively coupled to the AFM, and a control circuitry operatively coupled to the light source and the voltage source. The AFM apparatus improves the time resolution and enables rapid acquisition of photocapacitance transients in a wide array of solar-energy-harvesting materials.

An illustrative method disclosed herein includes measuring at least one electrical-related parameter of a doped semiconductor material by simultaneously irradiating at least a portion of an upper surface of the doped semiconductor material, urging a conductive tip of a cantilever beam probe into conductive contact with the upper surface of the irradiated portion of the doped semiconductor material, and generating an electrical current that flows through the doped semiconductor material, through a measurement device that is operatively coupled to the cantilever beam probe and through the cantilever beam probe, wherein the measurement device measures the at least one electrical-related parameter of the doped semiconductor material.

A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.